Volume 46; Issue 11

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Solid-State Electronics
Volume 46; Issue 11

Solid-State Electronics

Volume 46; Issue 11

1

Extraction of deep trap parameters from photocurrent transients by two-dimensional spectral analysis

Michal Pawlowski

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 221 KB

english, 2002

2

Modeling of abnormal capacitance–voltage characteristics observed in MOS transistor with ultra-thin gate oxide

Yung-Lung Hsu, Yean-Kuen Fang, Feng-Cherng Tsao, Fu-Jung Kuo, Yens Ho

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 116 KB

english, 2002

3

Improving high temperature characteristic of SiGeC/Si heterojunction diode with propane carbon source

W.T Hsieh, Y.K Fang, S.F Ting, Y.S Tsair, W.J Lee, H.P Wang

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 284 KB

english, 2002

4

Turn-off operation of a 2.6 kV 4H-SiC gate turn-off thyristor in MOS-gate mode

Michael E Levinshtein, Tigran T Mnatsakanov, Sergey N Yurkov, Pavel A Ivanov, Aleksey G Tandoev, Anant K Agarwal, John W Palmour

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 274 KB

english, 2002

5

Breakdown and stress-induced oxide degradation mechanisms in MOSFETs

J.H Chen, C.T Wei, S.M Hung, S.C Wong, Y.H Wang

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 534 KB

english, 2002

6

The effect of indium tin oxide as an ohmic contact for the 850 nm GaAs oxide-confined VCSELs

Wen-Jang Jiang, Meng-Chyi Wu, Hsin-Chieh Yu, Chun-Yuan Huang, Chia-Pin Sung, Jim-Yong Chi

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 187 KB

english, 2002

7

Study of the reactive ion etching of 6H–SiC and 4H–SiC in SF6/Ar plasmas by optical emission spectroscopy and laser interferometry

N Camara, K Zekentes

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 258 KB

english, 2002

8

A numerical study of ballistic transport in a nanoscale MOSFET

Jung-Hoon Rhew, Zhibin Ren, Mark S. Lundstrom

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 388 KB

english, 2002

9

Device and circuit performance of SiGe/Si MOSFETs

S.G Badcock, A.G O’Neill, E.G Chester

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 163 KB

english, 2002

10

Suppression of parasitic JFET effect in trench IGBTs by using a self-aligned p base process

X Yuan, T Trajkovic, F Udrea, J Thomson, P.R Waind, P Taylor, G.A.J Amaratunga

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 443 KB

english, 2002

11

Electron emission yield of induced photoemission effect in thin ITO layers

Jadwiga Olesik, Zygmunt Olesik

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 156 KB

english, 2002

12

Oxygen annealing modification of conduction mechanism in thin rf sputtered Ta2O5 on Si

E Atanassova, N Novkovski, A Paskaleva, M Pecovska-Gjorgjevich

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 612 KB

english, 2002

13

Analysis of thermal noise in scaled MOS devices and RF circuits

Sergio Spedo, Claudio Fiegna

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 186 KB

english, 2002

14

Influence of the topology on thermal dissipation in high power density GaAs devices

T Camps, A Marty, J Tasselli, J.P Bailbe, P Souverain

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 266 KB

english, 2002

15

High temperature characteristics of Ti/Al and Cr/Al ohmic contacts to n-type GaN

N.A Papanicolaou, K Zekentes

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 469 KB

english, 2002

16

Effects of Si-cap layer thinning and Ge segregation on the characteristics of Si/SiGe/Si heterostructure pMOSFETs

Young-Joo Song, Jung-Wook Lim, Sang-Hoon Kim, Hyun-Chul Bae, Jin-Young Kang, Kyung-Wan Park, Kyu-Hwan Shim

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 1.19 MB

english, 2002

17

Foreword

Enrico Sangiorgi

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 20 KB

english, 2002

18

Fabrication of single-electron transistors and circuits using SOIs

Yukinori Ono, Kenji Yamazaki, Masao Nagase, Seiji Horiguchi, Kenji Shiraishi, Yasuo Takahashi

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 289 KB

english, 2002

19

Memory properties of Si+ implanted gate oxides: from MOS capacitors to nvSRAM

J von Borany, T Gebel, K.-H Stegemann, H.-J Thees, M Wittmaack

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 567 KB

english, 2002

20

A new high injection efficiency non-volatile memory cell: BipFlash

David Esseni, Luca Selmi, Roberto Bez, Alberto Modelli

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 276 KB

english, 2002

21

Modeling of anomalous SILC in flash memories based on tunneling at multiple defects

Daniele Ielmini, Alessandro S Spinelli, Andrea L Lacaita, Alberto Modelli

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 370 KB

english, 2002

22

NROMTM––a new technology for non-volatile memory products

Ilan Bloom, Paolo Pavan, Boaz Eitan

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 582 KB

english, 2002

23

Reliability implications in advanced embedded two-transistor-Fowler–Nordheim-NOR flash memory devices

A. Scarpa, G. Tao, J. Dijkstra, F.G. Kuper

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 391 KB

english, 2002

24

Narrow-channel effects and their impact on the static and floating-body characteristics of STI- and LOCOS-isolated SOI MOSFETs

J Pretet, D Ioannou, N Subba, S Cristoloveanu, W Maszara, C Raynaud

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 323 KB

english, 2002

25

Transient effects in PD SOI MOSFETs and potential DRAM applications

S. Okhonin, M. Nagoga, J.-M. Sallese, P. Fazan, O. Faynot, J. Pontcharra, S. Cristoloveanu, Hans van Meer, Kristin De Meyer

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 336 KB

english, 2002

26

Monte Carlo simulation of electron mobility in silicon-on-insulator structures

F Gámiz, J.B Roldán, J.A López-Villanueva, P Cartujo-Cassinello, F Jiménez-Molinos

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 300 KB

english, 2002

27

Hydrogen-related hole capture and positive charge build up in buried oxides

A. Rivera, A. van Veen, H. Schut, J.M.M. de Nijs, P. Balk

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 211 KB

english, 2002

28

Interplay of voltage and temperature acceleration of oxide breakdown for ultra-thin gate oxides

E Wu, J Suñé, W Lai, E Nowak, J McKenna, A Vayshenker, D Harmon

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 339 KB

english, 2002

29

Electron trapping in non-crystalline Ta- and Hf-Aluminates for gate dielectric applications in aggressively scaled silicon devices

R.S Johnson, J.G Hong, C Hinkle, G Lucovsky

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 958 KB

english, 2002

30

Low frequency current noise in unstressed/stressed thin oxide metal-oxide-semiconductor capacitors

F Crupi, G Iannaccone, C Ciofi, B Neri, S Lombardo, C Pace

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 291 KB

english, 2002

31

Proton trapping in SiO2 layers thermally grown on Si and SiC

V.V. Afanas’ev, F. Ciobanu, G. Pensl, A. Stesmans

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 187 KB

english, 2002

32

Quantitative two-step hydrogen model of SiO2 gate oxide breakdown

Jordi Suñé, Ernest Wu

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 543 KB

english, 2002

33

Relation between hole traps and hydrogenous species in silicon dioxides

J.F. Zhang, C.Z. Zhao, H.K. Sii, G. Groeseneken, R. Degraeve, J.N. Ellis, C.D. Beech

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 438 KB

english, 2002

34

Energetics of oxygen species in crystalline and amorphous SiO2: a first-principles investigation

Angelo Bongiorno, Alfredo Pasquarello

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 176 KB

english, 2002

35

Non-radiative recombination at reconstructed Si surfaces

T Dittrich, T Bitzer, T Rada, V.Yu Timoshenko, J Rappich

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 424 KB

english, 2002

36

A molecular orbital model for the electronic structure of transition metal atoms in silicate and aluminate alloys

G Lucovsky, J.L Whitten, Y Zhang

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 488 KB

english, 2002

37

Chemical and electronic structure of ultrathin zirconium oxide films on silicon as determined by photoelectron spectroscopy

S Miyazaki, M Narasaki, M Ogasawara, M Hirose

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 259 KB

english, 2002

38

Mist deposited high-k dielectrics for next generation MOS gates

D.-O Lee, P Roman, C.-T Wu, P Mumbauer, M Brubaker, R Grant, J Ruzyllo

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 622 KB

english, 2002

39

Oxide thickness extraction methods in the nanometer range for statistical measurements

C Leroux, G Ghibaudo, G Reimbold, R Clerc, S Mathieu

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 251 KB

english, 2002

40

On the capacitance of metal/high-k dielectric material stack/silicon structures

J Jiang, O.O Awadelkarim, D.-O Lee, P Roman, J Ruzyllo

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 115 KB

english, 2002

41

An expression for the uncertainty introduced by the discrete sampling of a solar cell’s J–V curve

Keith R. McIntosh, James D. Clark

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 197 KB

english, 2002

42

The effect of vertical emitter ballasting resistors on the emitter current crowding effect in heterojunction bipolar transistors

Yuchun Chang, Guotong Du, Junfeng Song, Songxin Wang, Hailin Luo, Weikun Ge, Jiannong Wang, Y. Wang

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 173 KB

english, 2002

43

Corrigendum to “GaN-based modulation doped FETs and UV detectors” [Solid-State Electronics 2002;46(2):157–202]

Hadis Morkoç, Aldo Di Carlo, R Cingolani

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 29 KB

english, 2002

44

Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions

G Borsoni, V Le Roux, R Laffitte, S Kerdilès, N Béchu, L Vallier, M.L Korwin-Pawlowski, C Vannuffel, F Bertin, C Vergnaud, A Chabli, C Wyon

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 460 KB

english, 2002

45

Modeling the zero and forward bias operation of PIN diodes for high-frequency applications

N.V. Drozdovski, L.M. Drozdovskaia, R.H. Caverly, M.J. Quinn

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 363 KB

english, 2002

46

A novel approach to quantitative determination of charge trapping near channel/drain edge in MOSFETs

T.P Chen, Jiayi Huang, M.S Tse, X Zeng

Journal:

Solid-State Electronics

Year:

2002

Language:

english

File:

PDF, 135 KB

english, 2002

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