Mist deposited high-k dielectrics for next generation MOS...

Solid-State Electronics 2002 Vol. 46; Iss. 11

Mist deposited high-k dielectrics for next generation MOS gates

D.-O Lee, P Roman, C.-T Wu, P Mumbauer, M Brubaker, R Grant, J Ruzyllo
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Volume:
46
Year:
2002
Language:
english
Pages:
7
DOI:
10.1016/s0038-1101(02)00163-6
File:
PDF, 622 KB
english, 2002
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