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0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length
A Kuliev, V Kumar, R Schwindt, D Selvanathan, A.M Dabiran, P Chow, I AdesidaVolume:
47
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(02)00258-7
File:
PDF, 335 KB
english, 2003