0.15 μm gate-length AlGaN/GaN HEMTs with varying gate...

Solid-State Electronics 2003 Vol. 47; Iss. 1

0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length

A Kuliev, V Kumar, R Schwindt, D Selvanathan, A.M Dabiran, P Chow, I Adesida
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
47
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(02)00258-7
File:
PDF, 335 KB
english, 2003
Conversion to is in progress
Conversion to is failed