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Volume 47; Issue 1
Main
Solid-State Electronics
Volume 47; Issue 1
Solid-State Electronics
Volume 47; Issue 1
1
Helium irradiated high-power P–i–N diode with low ON-state voltage drop
J. Vobecký
,
P. Hazdra
,
V. Záhlava
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 192 KB
Your tags:
english, 2003
2
Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs
Zhenrong Jin
,
John D Cressler
,
Guofu Niu
,
Paul W Marshall
,
Hak S Kim
,
Robert Reed
,
Alvin J Joseph
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 203 KB
Your tags:
english, 2003
3
Polyreoxidation process step for suppressing edge direct tunneling through ultrathin gate oxides in NMOSFETs
Kingsuk Maitra
,
Navakanta Bhat
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 113 KB
Your tags:
english, 2003
4
Investigation of reliability and lifetime distribution of the gas sensors based on C2H5OH
Yu-de Wang
,
Xing-hui Wu
,
Zhen-lai Zhou
,
Yan-feng Li
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 84 KB
Your tags:
english, 2003
5
Power handling limits and degradation of large area AlGaN/GaN RF-HEMTs
R Dietrich
,
A Wieszt
,
A Vescan
,
H Leier
,
R Stenzel
,
W Klix
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 129 KB
Your tags:
english, 2003
6
Carrier mobility model for GaN
Tigran T Mnatsakanov
,
Michael E Levinshtein
,
Lubov I Pomortseva
,
Sergey N Yurkov
,
Grigory S Simin
,
M Asif Khan
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 136 KB
Your tags:
english, 2003
7
Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress
Yi-Mu Lee
,
Yider Wu
,
Choelhwyi Bae
,
Joon Goo Hong
,
Gerald Lucovsky
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 450 KB
Your tags:
english, 2003
8
0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length
A Kuliev
,
V Kumar
,
R Schwindt
,
D Selvanathan
,
A.M Dabiran
,
P Chow
,
I Adesida
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 335 KB
Your tags:
english, 2003
9
Analysis of the anomalous drain current characteristics of halo MOSFETs
Hoewoo Koo
,
Kieyoung Lee
,
Kyungho Lee
,
Tor A Fjeldly
,
Michael S Shur
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 833 KB
Your tags:
english, 2003
10
A compact SOI MOS transistor model for distortion analysis
Guoyan Zhang
,
Huailin Liao
,
Ru Huang
,
Chan Mansun
,
Xing Zhang
,
Yangyuan Wang
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 207 KB
Your tags:
english, 2003
11
High frequency BJT: modeling, and parameter extraction from simple measurements on encapsulated devices
S. Karmalkar
,
A.Sharat Chandra
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 211 KB
Your tags:
english, 2003
12
Stability of hydrogenated in pure hydrogen plasma p-channel polycrystalline silicon thin-film transistors
N.A Hastas
,
D.H Tassis
,
C.A Dimitriadis
,
J Brini
,
G Kamarinos
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 196 KB
Your tags:
english, 2003
13
Influence of edge termination geometry on performance of 4H-SiC p–i–n rectifiers
S Nigam
,
Jihyun Kim
,
B Luo
,
F Ren
,
G.Y Chung
,
S.J Pearton
,
J.R Williams
,
K Shenai
,
P Neudeck
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 337 KB
Your tags:
english, 2003
14
Effect of contact geometry on 4H-SiC rectifiers with junction termination extension
S Nigam
,
J Kim
,
B Luo
,
F Ren
,
G.Y Chung
,
S.J Pearton
,
J.R Williams
,
K Shenai
,
P Neudeck
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 240 KB
Your tags:
english, 2003
15
Analysis of direct tunneling for thin SiO2 film by Wentzel, Kramers, Brillouin method––considering tail of distribution function
Naoto Matsuo
,
Yoshinori Takami
,
Hiroyuki Kihara
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 103 KB
Your tags:
english, 2003
16
Silicon-based all-optical memory elements for 1.54 μm photonics
M Forcales
,
T Gregorkiewicz
,
J.M Zavada
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 115 KB
Your tags:
english, 2003
17
A study into the applicability of p+n+ (universal contact) to power semiconductor diodes for faster reverse recovery
R.S. Anand
,
B. Mazhari
,
J. Narain
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 185 KB
Your tags:
english, 2003
18
Scaleable large-signal model of 0.18 μm CMOS process for rf power predictions
Chin-Wei Kuo
,
Chao-Chih Hsiao
,
Chien-Chih Ho
,
Yi-Jen Chan
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 316 KB
Your tags:
english, 2003
19
A method to evaluate the location of the maximum value of a function with high level of noise
A. Ortiz-Conde
,
F.J. Garcı́a Sánchez
,
A. Caralli-D’Ambrosio
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 426 KB
Your tags:
english, 2003
20
New type of defects related to nonuniform distribution of compensating centers in p-GaN films
A.Y Polyakov
,
A.V Govorkov
,
N.B Smirnov
,
N.M Shmidt
,
S.J Pearton
,
A.V Osinsky
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 297 KB
Your tags:
english, 2003
21
On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs
Chih-Kai Wang
,
Kuo-Hui Yu
,
Wen-Hui Chiou
,
Chun-Yuan Chen
,
Hung-Ming Chuang
,
Wen-Chau Liu
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 251 KB
Your tags:
english, 2003
22
A new depletion dependent analytical model for sheet carrier density of InAlAs/InGaAs heterostructure, InP based HEMT
Ritesh Gupta
,
Mridula Gupta
,
R.S Gupta
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 141 KB
Your tags:
english, 2003
23
Low noise photosensitive device structures based on porous silicon
L.A Balagurov
,
S.C Bayliss
,
D.G Yarkin
,
S.Ya Andrushin
,
V.S Kasatochkin
,
A.F Orlov
,
E.A Petrova
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 152 KB
Your tags:
english, 2003
24
Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics
K.J Yang
,
T.-J King
,
C Hu
,
S Levy
,
H.N Al-Shareef
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 222 KB
Your tags:
english, 2003
25
Reverse-bias safe operation area of large area MCT and IGBT
Yin Liu
,
Budong You
,
Alex Q Huang
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 648 KB
Your tags:
english, 2003
26
Reducing the current crowding effect in bipolar transistors by tunnel diode emitter design
N Shamir
,
D Ritter
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 415 KB
Your tags:
english, 2003
27
Enhancement of hole injection for nitride-based light-emitting devices
S.M Komirenko
,
K.W Kim
,
V.A Kochelap
,
J.M Zavada
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 125 KB
Your tags:
english, 2003
28
Design and optimization of vertical surrounding gate MOSFETs for enhanced transconductance-to-current ratio (gm/Ids)
A Kranti
,
Rashmi
,
S Haldar
,
R.S Gupta
Journal:
Solid-State Electronics
Year:
2003
Language:
english
File:
PDF, 135 KB
Your tags:
english, 2003
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