Volume 47; Issue 1

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Solid-State Electronics
Volume 47; Issue 1

Solid-State Electronics

Volume 47; Issue 1

1

Helium irradiated high-power P–i–N diode with low ON-state voltage drop

J. Vobecký, P. Hazdra, V. Záhlava

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 192 KB

english, 2003

2

Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs

Zhenrong Jin, John D Cressler, Guofu Niu, Paul W Marshall, Hak S Kim, Robert Reed, Alvin J Joseph

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 203 KB

english, 2003

3

Polyreoxidation process step for suppressing edge direct tunneling through ultrathin gate oxides in NMOSFETs

Kingsuk Maitra, Navakanta Bhat

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 113 KB

english, 2003

4

Investigation of reliability and lifetime distribution of the gas sensors based on C2H5OH

Yu-de Wang, Xing-hui Wu, Zhen-lai Zhou, Yan-feng Li

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 84 KB

english, 2003

5

Power handling limits and degradation of large area AlGaN/GaN RF-HEMTs

R Dietrich, A Wieszt, A Vescan, H Leier, R Stenzel, W Klix

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 129 KB

english, 2003

6

Carrier mobility model for GaN

Tigran T Mnatsakanov, Michael E Levinshtein, Lubov I Pomortseva, Sergey N Yurkov, Grigory S Simin, M Asif Khan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 136 KB

english, 2003

7

Structural dependence of breakdown characteristics and electrical degradation in ultrathin RPECVD oxide/nitride gate dielectrics under constant voltage stress

Yi-Mu Lee, Yider Wu, Choelhwyi Bae, Joon Goo Hong, Gerald Lucovsky

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 450 KB

english, 2003

8

0.15 μm gate-length AlGaN/GaN HEMTs with varying gate recess length

A Kuliev, V Kumar, R Schwindt, D Selvanathan, A.M Dabiran, P Chow, I Adesida

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 335 KB

english, 2003

9

Analysis of the anomalous drain current characteristics of halo MOSFETs

Hoewoo Koo, Kieyoung Lee, Kyungho Lee, Tor A Fjeldly, Michael S Shur

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 833 KB

english, 2003

10

A compact SOI MOS transistor model for distortion analysis

Guoyan Zhang, Huailin Liao, Ru Huang, Chan Mansun, Xing Zhang, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 207 KB

english, 2003

11

High frequency BJT: modeling, and parameter extraction from simple measurements on encapsulated devices

S. Karmalkar, A.Sharat Chandra

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 211 KB

english, 2003

12

Stability of hydrogenated in pure hydrogen plasma p-channel polycrystalline silicon thin-film transistors

N.A Hastas, D.H Tassis, C.A Dimitriadis, J Brini, G Kamarinos

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 196 KB

english, 2003

13

Influence of edge termination geometry on performance of 4H-SiC p–i–n rectifiers

S Nigam, Jihyun Kim, B Luo, F Ren, G.Y Chung, S.J Pearton, J.R Williams, K Shenai, P Neudeck

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 337 KB

english, 2003

14

Effect of contact geometry on 4H-SiC rectifiers with junction termination extension

S Nigam, J Kim, B Luo, F Ren, G.Y Chung, S.J Pearton, J.R Williams, K Shenai, P Neudeck

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 240 KB

english, 2003

15

Analysis of direct tunneling for thin SiO2 film by Wentzel, Kramers, Brillouin method––considering tail of distribution function

Naoto Matsuo, Yoshinori Takami, Hiroyuki Kihara

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 103 KB

english, 2003

16

Silicon-based all-optical memory elements for 1.54 μm photonics

M Forcales, T Gregorkiewicz, J.M Zavada

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 115 KB

english, 2003

17

A study into the applicability of p+n+ (universal contact) to power semiconductor diodes for faster reverse recovery

R.S. Anand, B. Mazhari, J. Narain

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 185 KB

english, 2003

18

Scaleable large-signal model of 0.18 μm CMOS process for rf power predictions

Chin-Wei Kuo, Chao-Chih Hsiao, Chien-Chih Ho, Yi-Jen Chan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 316 KB

english, 2003

19

A method to evaluate the location of the maximum value of a function with high level of noise

A. Ortiz-Conde, F.J. Garcı́a Sánchez, A. Caralli-D’Ambrosio

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 426 KB

english, 2003

20

New type of defects related to nonuniform distribution of compensating centers in p-GaN films

A.Y Polyakov, A.V Govorkov, N.B Smirnov, N.M Shmidt, S.J Pearton, A.V Osinsky

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 297 KB

english, 2003

21

On the high-performance n+-GaAs/p+-InGaP/n-GaAs high-barrier gate camel-like HFETs

Chih-Kai Wang, Kuo-Hui Yu, Wen-Hui Chiou, Chun-Yuan Chen, Hung-Ming Chuang, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 251 KB

english, 2003

22

A new depletion dependent analytical model for sheet carrier density of InAlAs/InGaAs heterostructure, InP based HEMT

Ritesh Gupta, Mridula Gupta, R.S Gupta

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 141 KB

english, 2003

23

Low noise photosensitive device structures based on porous silicon

L.A Balagurov, S.C Bayliss, D.G Yarkin, S.Ya Andrushin, V.S Kasatochkin, A.F Orlov, E.A Petrova

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 152 KB

english, 2003

24

Electron mobility in MOSFETs with ultrathin RTCVD silicon nitride/oxynitride stacked gate dielectrics

K.J Yang, T.-J King, C Hu, S Levy, H.N Al-Shareef

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 222 KB

english, 2003

25

Reverse-bias safe operation area of large area MCT and IGBT

Yin Liu, Budong You, Alex Q Huang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 648 KB

english, 2003

26

Reducing the current crowding effect in bipolar transistors by tunnel diode emitter design

N Shamir, D Ritter

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 415 KB

english, 2003

27

Enhancement of hole injection for nitride-based light-emitting devices

S.M Komirenko, K.W Kim, V.A Kochelap, J.M Zavada

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 125 KB

english, 2003

28

Design and optimization of vertical surrounding gate MOSFETs for enhanced transconductance-to-current ratio (gm/Ids)

A Kranti, Rashmi, S Haldar, R.S Gupta

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 135 KB

english, 2003