The critical charge concept for 4H-SiC-based thyristors

Solid-State Electronics 2003 Vol. 47; Iss. 9

The critical charge concept for 4H-SiC-based thyristors

Tigran T. Mnatsakanov, Sergey N. Yurkov, Michael E. Levinshtein, Aleksey G. Tandoev, Anant K. Agarwal, John W. Palmour
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Volume:
47
Year:
2003
Language:
english
Pages:
7
DOI:
10.1016/s0038-1101(03)00105-9
File:
PDF, 184 KB
english, 2003
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