Elimination of burn-in effect in carbon-doped InGaP/GaAs...

Solid-State Electronics 2003 Vol. 47; Iss. 11

Elimination of burn-in effect in carbon-doped InGaP/GaAs HBTs by hydrogen lateral diffusion

Y.K. Su, W.B. Chen, C.L. Lin, H.C. Wang, S.M. Chen, K.M. Liang
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Volume:
47
Year:
2003
Language:
english
Pages:
4
DOI:
10.1016/s0038-1101(03)00218-1
File:
PDF, 129 KB
english, 2003
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