Volume 47; Issue 11

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Solid-State Electronics
Volume 47; Issue 11

Solid-State Electronics

Volume 47; Issue 11

1

Application of advanced metal–oxide–semiconductor transistor in next generation, silicon resonant tunneling MOS transistor, to new logic circuit

Naoto Matsuo, Hiroyuki Kihara, Yoshinori Takami

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 183 KB

english, 2003

2

Explicit current model for dual-gate MOSFET

Koray Karahaliloglu, Gunhan Dundar

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 171 KB

english, 2003

3

Ohmic contact properties of Ni/C film on 4H-SiC

Weijie Lu, W.C Mitchel, G.R Landis, T.R Crenshaw, W.Eugene Collins

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 365 KB

english, 2003

4

A model for multi-finger HBTs including current gain collapse effects

Akhil Garlapati, Sheila Prasad, Pradeep Vempada, Kambiz Munshi

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 203 KB

english, 2003

5

Device simulations of nanocrystalline silicon thin-film transistors

D. Dosev, B. Iñı&amp, #x0301, guez, L.F. Marsal, J. Pallares, T. Ytterdal

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 226 KB

english, 2003

6

Thermal resistance variation of HBT with high junction temperature and bias condition

Yan-Kuin Su, Sun-Chin Wei, Lee-Sheng Chang, Ray-Lu Wang, Charles J. Wang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 114 KB

english, 2003

7

Temperature effects of low noise InGaP/InGaAs/GaAs PHEMTs

H.K. Huang, C.S. Wang, Y.H. Wang, C.L. Wu, C.S. Chang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 181 KB

english, 2003

8

Elimination of burn-in effect in carbon-doped InGaP/GaAs HBTs by hydrogen lateral diffusion

Y.K. Su, W.B. Chen, C.L. Lin, H.C. Wang, S.M. Chen, K.M. Liang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 129 KB

english, 2003

9

Hafnium oxide gate dielectric for strained-Si1−xGex

C.K. Maiti, S. Maikap, S. Chatterjee, S.K. Nandi, S.K. Samanta

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 249 KB

english, 2003

10

Defect spectroscopy using 1/fγ noise of gate leakage current in ultrathin oxide MOSFETs

Jonghwan Lee, Gijs Bosman

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 362 KB

english, 2003

11

Modeling and simulation of asymmetric gate stack (ASYMGAS)-MOSFET

Manoj Saxena, Subhasis Haldar, Mridula Gupta, R.S. Gupta

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 195 KB

english, 2003

12

A high performance RF LDMOSFET in thin film SOI technology with step drift profile

J. Luo, G. Cao, S.N. Ekkanath Madathil, M.M. De Souza

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 183 KB

english, 2003

13

Sub-circuit models of silicon-on-insulator insulated-gate pn-junction devices for electrostatic discharge protection circuit design and their applications

Shigeyuki Wakita, Yasuhisa Omura

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 220 KB

english, 2003

14

Terahertz self-oscillations in negative-effective-mass oscillators

J.C. Cao, X.L. Lei, H.C. Liu

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 163 KB

english, 2003

15

RF MOSFET: recent advances, current status and future trends

Juin J Liou, Frank Schwierz

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 337 KB

english, 2003

16

Ohmic contacts to 3C-SiC for Schottky diode gas sensors

S. Roy, C. Jacob, S. Basu

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 312 KB

english, 2003

17

Random doping-induced fluctuations of subthreshold characteristics in MOSFET devices

Petru Andrei, Isaak Mayergoyz

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 210 KB

english, 2003

18

Effect of surface passivation on performance of AlGaN/GaN/Si HEMTs

J. Bernát, P. Javorka, A. Fox, M. Marso, H. Lüth, P. Kordoš

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 181 KB

english, 2003

19

Computationally efficient solution of carrier trapping/annihilation equation in MOS devices using Runge–Kutta method

Piyas Samanta, C.K. Sarkar

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 96 KB

english, 2003

20

Effect of substituted derivatives on carrier transport in organic polymers

Harry H.L. Kwok

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 134 KB

english, 2003

21

Exact analytical solution of channel surface potential as an explicit function of gate voltage in undoped-body MOSFETs using the Lambert W function and a threshold voltage definition therefrom

A. Ortiz-Conde, F.J. Garcı́a Sánchez, M. Guzmán

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 258 KB

english, 2003

22

A novel integrable surface acoustic wave notch filter

I-Tseng Tang, Han-Jan Chen, Mau-Phon Houng, Yeong-Her Wang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 94 KB

english, 2003

23

Nitride-based blue LEDs with GaN/SiN double buffer layers

C.H. Kuo, S.J. Chang, Y.K. Su, C.K. Wang, L.W. Wu, J.K. Sheu, T.C. Wen, W.C. Lai, J.M. Tsai, C.C. Lin

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 193 KB

english, 2003

24

Quasi-enhancement mode AlGaN/GaN HEMTs on sapphire substrate

Jaesun Lee, Dongmin Liu, Zhaojun Lin, Wu Lu, Jeffrey S. Flynn, George R. Brandes

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 84 KB

english, 2003

25

Nitride-based 2DEG photodetectors with a large AC responsivity

S.J. Chang, T.M. Kuan, C.H. Ko, Y.K. Su, J.B. Webb, J.A. Bardwell, Y. Liu, H. Tang, W.J. Lin, Y.T. Cherng, W.H. Lan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 126 KB

english, 2003

26

In0.23Ga0.77N/GaN MQW LEDs with a low temperature GaN cap layer

L.W. Wu, S.J. Chang, Y.K. Su, R.W. Chuang, Y.P. Hsu, C.H. Kuo, W.C. Lai, T.C. Wen, J.M. Tsai, J.K. Sheu

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 129 KB

english, 2003

27

A unified model for high-frequency current noise of MOSFETs

Heng-Fa Teng, Sheng-Lyang Jang, M.H. Juang

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 121 KB

english, 2003

28

A review of leakage current in SOI CMOS ICs: impact on parametric testing techniques

Benjamı́n Iñı́guez, Jean-Pierre Raskin, Pascal Simon, Denis Flandre, Jaume Segura

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 177 KB

english, 2003

29

Optoelectronic property of PN junction on erbium-doped silicon using thermal diffusion method

Bing Ruo Chen, Yuan Yuan Zhang, Bo Yu

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 86 KB

english, 2003

30

Computational load pull simulations of SiC microwave power transistors

R. Jonsson, Q. Wahab, S. Rudner, C. Svensson

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 315 KB

english, 2003

31

A new procedure to extract the threshold voltage of MOSFETs using noise-reduction techniques

R. Picos, M. Roca, B. Iñı́guez, E. Garcı́a-Moreno

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 138 KB

english, 2003

32

Substrate loss mechanisms for microstrip and CPW transmission lines on lossy silicon wafers

Dimitri Lederer, Jean-Pierre Raskin

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 377 KB

english, 2003

33

Electronic effects of light ion damage in hydrogenated amorphous silicon

J.M. Shannon, C.H. Chua

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 193 KB

english, 2003

34

Very low Schottky barrier to n-type silicon with PtEr-stack silicide

Xiaohui Tang, J. Katcki, E. Dubois, N. Reckinger, J. Ratajczak, G. Larrieu, P. Loumaye, O. Nisole, V. Bayot

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 183 KB

english, 2003

35

DC electric field assisted alignment of carbon nanotubes on metal electrodes

M. Senthil Kumar, S.H. Lee, T.Y. Kim, T.H. Kim, S.M. Song, J.W. Yang, K.S. Nahm, E.-K. Suh

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 257 KB

english, 2003

36

A unified I–V model for PD/FD SOI MOSFETs with a compact model for floating body effects

Sara Bolouki, Mahnaz Maddah, Ali Afzali-Kusha, Mahmoud El Nokali

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 207 KB

english, 2003

37

Optimization of plasma nitridation for reliability enhancement of low-temperature gate dielectric in MOS devices

David C.T. Or, P.T. Lai, J.K.O. Sin

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 108 KB

english, 2003

38

A 2D-electron-gas terahertz detector based on the bipolar inversion channel field-effect transistor

Y. Huo, G.W. Taylor

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 187 KB

english, 2003

39

Fabrication of indium resistors by layer-by-layer nanoassembly and microlithography techniques

Jingshi Shi, Tianhong Cui

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 170 KB

english, 2003

40

A fully integrated dual-band VCO by 0.18 μm CMOS technologies

Chien-Chih Ho, Chin-Wei Kuo, Chao-Chih Hsiao, Yi-Jen Chan

Journal:

Solid-State Electronics

Year:

2003

Language:

english

File:

PDF, 232 KB

english, 2003

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