Hafnium oxide gate dielectric for strained-Si1−xGex
C.K. Maiti, S. Maikap, S. Chatterjee, S.K. Nandi, S.K. SamantaVolume:
47
Year:
2003
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(03)00219-3
File:
PDF, 249 KB
english, 2003