Defect spectroscopy using 1/fγ noise of gate leakage...

Solid-State Electronics 2003 Vol. 47; Iss. 11

Defect spectroscopy using 1/fγ noise of gate leakage current in ultrathin oxide MOSFETs

Jonghwan Lee, Gijs Bosman
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Volume:
47
Year:
2003
Language:
english
Pages:
9
DOI:
10.1016/s0038-1101(03)00220-x
File:
PDF, 362 KB
english, 2003
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