Optoelectronic property of PN junction on erbium-doped...

Solid-State Electronics 2003 Vol. 47; Iss. 11

Optoelectronic property of PN junction on erbium-doped silicon using thermal diffusion method

Bing Ruo Chen, Yuan Yuan Zhang, Bo Yu
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Volume:
47
Year:
2003
Language:
english
Pages:
4
DOI:
10.1016/s0038-1101(03)00250-8
File:
PDF, 86 KB
english, 2003
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