MOSFET inversion layer capacitance model based on...

Solid-State Electronics 1997 Vol. 41; Iss. 3

MOSFET inversion layer capacitance model based on Fermi-Dirac statistics for wide temperature range

Kai Chen, George Zhang, Jon Duster, Chenming Hu, Jianhui Huang, Zhihong Liu, Ping K Ko
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Volume:
41
Year:
1997
Language:
english
Pages:
3
DOI:
10.1016/s0038-1101(96)00104-9
File:
PDF, 215 KB
english, 1997
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