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Volume 41; Issue 3
Main
Solid-State Electronics
Volume 41; Issue 3
Solid-State Electronics
Volume 41; Issue 3
1
Punchthrough currents in sub-micron short channel MOS transistors
Kuan-Yu Fu
,
Yuk L Tsang
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 407 KB
Your tags:
english, 1997
2
MOSFET inversion layer capacitance model based on Fermi-Dirac statistics for wide temperature range
Kai Chen
,
George Zhang
,
Jon Duster
,
Chenming Hu
,
Jianhui Huang
,
Zhihong Liu
,
Ping K Ko
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 215 KB
Your tags:
english, 1997
3
Numerical analysis of temperature dependence of very-short-pulse-induced dynamic latchup in CMOS
Hideyuki Iwata
,
Takashi Ohzone
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 606 KB
Your tags:
english, 1997
4
Analysis of positive charge trapping in silicon dioxide of MOS capacitors during Fowler-Nordheim stress
Piyas Samanta
,
C.K Sarkar
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 625 KB
Your tags:
english, 1997
5
Hydrogen-extended defect interactions in heteroepitaxial InP materials and devices
Steven A Ringel
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 2.14 MB
Your tags:
english, 1997
6
Analysis for relative intensity noise of optoelectronic integrated device by heterojunction phototransistor and laser diode
Vahid Ahmadi
,
Susumu Noda
,
Akio Sasaki
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 593 KB
Your tags:
english, 1997
7
Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects
Saburo Takamiya
,
Takuji Sonoda
,
Masahide Yamanouchi
,
Takashi Fujioka
,
Masaki Kohno
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 906 KB
Your tags:
english, 1997
8
Perimeter and bulk recombination currents in GaAs homojunction diodes and GaAsAlGaAs heterojunction bipolar transistors after surface processing
S.R.D Kalingamudali
,
A.C Wismayer
,
R.C Woods
,
D.R Wight
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 587 KB
Your tags:
english, 1997
9
Effects of the series resistance on Fowler-Nordheim tunneling oscillations
Dongsheng Hsu
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 171 KB
Your tags:
english, 1997
10
An analytical CAD kink effect model of partially-depleted SOI NMOS devices operating in strong inversion
S.S Chen
,
J.B Kuo
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 825 KB
Your tags:
english, 1997
11
On the 1f noise in polysilicon emitter bipolar transistors: Coherence between base current noise and emitter series resistance noise
H.A.W Markus
,
Ph Roche
,
T.G.M Kleinpenning
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 444 KB
Your tags:
english, 1997
12
Experimental verification and numerical application of the thermodynamic approach to high-frequency noise in SiGe HBTs
F Herzel
,
P Schley
,
B Heinemann
,
U Zillmann
,
D Knoll
,
D Temmler
,
U Erben
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 346 KB
Your tags:
english, 1997
13
Reactively sputtered aluminum nitride in GaAs processing
L.S Klingbeil
,
M.R Wilson
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 542 KB
Your tags:
english, 1997
14
Effects of CH4H2 reactive ion etching on the scattering times of InP heterostructures
R Cheung
,
W Patrick
,
P Sutter
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 275 KB
Your tags:
english, 1997
15
Effect of postoxidation cooling on the interface states introduced by ion implantation
S Kaschieva
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 245 KB
Your tags:
english, 1997
16
Injection-level dependence of charge carrier mobility in high-injection plasma
D Reznik
,
W Gerlach
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 615 KB
Your tags:
english, 1997
17
Capacitance-voltage profiling of multiquantum well structures
B.A Bobylev
,
T.E Kovalevskaja
,
I.V Marchishin
,
V.N Ovsyuk
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 553 KB
Your tags:
english, 1997
18
Investigation of InGaAs based pseudomorphic step-doped-channel field-effect transistor (SDCFET)
Kun-Wei Lin
,
Lih-Wen Laih
,
Wen-Chau Liu
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 391 KB
Your tags:
english, 1997
19
Homoepitaxial layer from ion-implanted diamond
Ma Zhongquan
,
H Naramoto
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 469 KB
Your tags:
english, 1997
20
Characteristics of a triple-well heterostructure-emitter bipolar transistor (TWHEBT)
Der Feng Guo
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 395 KB
Your tags:
english, 1997
21
Effects of irradiation on hot carrier induced interface states in n-MOSFETs
N.C Das
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 300 KB
Your tags:
english, 1997
22
The effect of a cap layer on the diffusion of zinc from doped silica films in gallium arsenide
S Chatterjee
,
K.N Bhat
,
P.R.S Rao
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 451 KB
Your tags:
english, 1997
23
Numerical simulation of drain lag in HJFETs on hole-trap substrates
Masanobu Nogome
,
Kazuaki Kunihiro
,
Yasuo Ohno
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 574 KB
Your tags:
english, 1997
24
Electrical and optical changes in AlGaAs and InGaP during dielectric etching in ECR SF6 plasmas
K.N Lee
,
J.W Lee
,
C.R Abernathy
,
S.J Pearton
,
W.S Hobson
,
F Ren
Journal:
Solid-State Electronics
Year:
1997
Language:
english
File:
PDF, 379 KB
Your tags:
english, 1997
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