Volume 41; Issue 3

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Solid-State Electronics
Volume 41; Issue 3

Solid-State Electronics

Volume 41; Issue 3

1

Punchthrough currents in sub-micron short channel MOS transistors

Kuan-Yu Fu, Yuk L Tsang

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 407 KB

english, 1997

2

MOSFET inversion layer capacitance model based on Fermi-Dirac statistics for wide temperature range

Kai Chen, George Zhang, Jon Duster, Chenming Hu, Jianhui Huang, Zhihong Liu, Ping K Ko

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 215 KB

english, 1997

3

Numerical analysis of temperature dependence of very-short-pulse-induced dynamic latchup in CMOS

Hideyuki Iwata, Takashi Ohzone

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 606 KB

english, 1997

4

Analysis of positive charge trapping in silicon dioxide of MOS capacitors during Fowler-Nordheim stress

Piyas Samanta, C.K Sarkar

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 625 KB

english, 1997

5

Hydrogen-extended defect interactions in heteroepitaxial InP materials and devices

Steven A Ringel

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 2.14 MB

english, 1997

6

Analysis for relative intensity noise of optoelectronic integrated device by heterojunction phototransistor and laser diode

Vahid Ahmadi, Susumu Noda, Akio Sasaki

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 593 KB

english, 1997

7

Source-drain burnout mechanism of GaAs power MESFETS: Three terminal effects

Saburo Takamiya, Takuji Sonoda, Masahide Yamanouchi, Takashi Fujioka, Masaki Kohno

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 906 KB

english, 1997

8

Perimeter and bulk recombination currents in GaAs homojunction diodes and GaAsAlGaAs heterojunction bipolar transistors after surface processing

S.R.D Kalingamudali, A.C Wismayer, R.C Woods, D.R Wight

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 587 KB

english, 1997

9

Effects of the series resistance on Fowler-Nordheim tunneling oscillations

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 171 KB

english, 1997

10

An analytical CAD kink effect model of partially-depleted SOI NMOS devices operating in strong inversion

S.S Chen, J.B Kuo

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 825 KB

english, 1997

11

On the 1f noise in polysilicon emitter bipolar transistors: Coherence between base current noise and emitter series resistance noise

H.A.W Markus, Ph Roche, T.G.M Kleinpenning

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 444 KB

english, 1997

12

Experimental verification and numerical application of the thermodynamic approach to high-frequency noise in SiGe HBTs

F Herzel, P Schley, B Heinemann, U Zillmann, D Knoll, D Temmler, U Erben

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 346 KB

english, 1997

13

Reactively sputtered aluminum nitride in GaAs processing

L.S Klingbeil, M.R Wilson

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 542 KB

english, 1997

14

Effects of CH4H2 reactive ion etching on the scattering times of InP heterostructures

R Cheung, W Patrick, P Sutter

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 275 KB

english, 1997

15

Effect of postoxidation cooling on the interface states introduced by ion implantation

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 245 KB

english, 1997

16

Injection-level dependence of charge carrier mobility in high-injection plasma

D Reznik, W Gerlach

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 615 KB

english, 1997

17

Capacitance-voltage profiling of multiquantum well structures

B.A Bobylev, T.E Kovalevskaja, I.V Marchishin, V.N Ovsyuk

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 553 KB

english, 1997

18

Investigation of InGaAs based pseudomorphic step-doped-channel field-effect transistor (SDCFET)

Kun-Wei Lin, Lih-Wen Laih, Wen-Chau Liu

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 391 KB

english, 1997

19

Homoepitaxial layer from ion-implanted diamond

Ma Zhongquan, H Naramoto

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 469 KB

english, 1997

20

Characteristics of a triple-well heterostructure-emitter bipolar transistor (TWHEBT)

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 395 KB

english, 1997

21

Effects of irradiation on hot carrier induced interface states in n-MOSFETs

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 300 KB

english, 1997

22

The effect of a cap layer on the diffusion of zinc from doped silica films in gallium arsenide

S Chatterjee, K.N Bhat, P.R.S Rao

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 451 KB

english, 1997

23

Numerical simulation of drain lag in HJFETs on hole-trap substrates

Masanobu Nogome, Kazuaki Kunihiro, Yasuo Ohno

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 574 KB

english, 1997

24

Electrical and optical changes in AlGaAs and InGaP during dielectric etching in ECR SF6 plasmas

K.N Lee, J.W Lee, C.R Abernathy, S.J Pearton, W.S Hobson, F Ren

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 379 KB

english, 1997