An on-state analytical model for the Trench Insulated Gate...

Solid-State Electronics 1997 Vol. 41; Iss. 8

An on-state analytical model for the Trench Insulated Gate Bipolar Transistor (TIGBT)

F Udrea, G.A.J Amaratunga
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Volume:
41
Year:
1997
Language:
english
Pages:
8
DOI:
10.1016/s0038-1101(97)00034-8
File:
PDF, 781 KB
english, 1997
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