Volume 41; Issue 8

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Solid-State Electronics
Volume 41; Issue 8

Solid-State Electronics

Volume 41; Issue 8

1

Nonparabolic multivalley balance-equation approach to high-field electron transport in GaAs

J.C Cao, X.L Lei

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 277 KB

english, 1997

2

Correlation of implantation defects with interface recombination velocities and carrier lifetimes in annealed SIMOX SOI materials by using a contactless optical modulation technique

Y.-S Chang, Sheng S Li, R Datta, L.P Allen

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 1006 KB

english, 1997

3

Al-free InP-based high electron mobility transistors: Design, fabrication and performance

A Mesquida Küsters, K Heime

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 1.34 MB

english, 1997

4

Analytical relations for the base transit time and collector current in BJTs and HBTs

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 610 KB

english, 1997

5

Analysis of the inner collection efficiency in hybrid silicon solar cells

P Nubile, P Torres, C Hof, D Fischer

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 337 KB

english, 1997

6

Velocity overshoot of electrons and holes in Si inversion layers

D Sinitsky, F Assaderaghi, M Orshansky, J Bokor, C Hu

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 583 KB

english, 1997

7

Base contact resistance limits to lateral scaling of fully self-aligned double mesa SiGe-HBTs

D Behammer, K Wieczorek, J.N Albers, S Friedrich, H.-U Schreiber, B.G Bosch

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 546 KB

english, 1997

8

An on-state analytical model for the Trench Insulated Gate Bipolar Transistor (TIGBT)

F Udrea, G.A.J Amaratunga

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 781 KB

english, 1997

9

Output characteristics of the Dual Channel EST

S Sridhar, B.J Baliga

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 526 KB

english, 1997

10

Modeling and analysis of heterostructure-emitter and heterostructure-base transistors (HEHBTs)

J.-H Tsai, S.-Y Cheng, P.-H Lin, W.-C Wang, J.-Y Chen, W.-C Liu

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 440 KB

english, 1997

11

Boron out diffusion from Si substrates in various ambients

Kunihiro Suzuki, Hideki Yamawaki, Yoko Tada

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 198 KB

english, 1997

12

Hot-carrier reliability of non-degenerately doped tungsten polycide gate buried-channel p-MOSFETs

C.L Lou, W.K Chim, D.S.H Chan, Y Pan

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 661 KB

english, 1997

13

Gate-oxide thickness dependence of LDD MOSFET parameters

Md.R Hassan, J.J Liou, A Ortiz-Conde

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 217 KB

english, 1997

14

V-Grooved GaAsAlGaAs quantum wire laser array confined by junction-isolation stripes

T.G Kim, E.K Kim, S.-K Min, J.-H Park

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 266 KB

english, 1997

15

Physical models for strained and relaxed GaInAs alloys: Band structure and low-field transport

Ch Köpf, H Kosina, S Selberherr

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 1.11 MB

english, 1997

16

Analytical modelling of BJT neutral base region under variable injection conditions

D Bardés, R Alcubilla

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 383 KB

english, 1997

17

Performance dependence of large-area silicon p-i-n photodetectors upon epitaxial thickness

M Seto, M Mabesoone, S De Jager, A Vermeulen, W De Boer, M Theunissen, H Tuinhout

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 416 KB

english, 1997

18

Self consistent fitting method for defect analysis by low-frequency noise measurements in reverse biased p-n junctions

M.M Jevtić, M.V Lazović

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 490 KB

english, 1997

19

Measurement and modeling of the anomalous dynamic response of high resistivity diodes at cryogenic temperatures

K Misiakos, D Tsamakis, E Tsoi

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 464 KB

english, 1997

20

Conduction mechanism in a metal-insulator-semiconductor structure with a low temperature GaAs insulating layer

P Arifin, T.L Tansley, E.M Goldys

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 404 KB

english, 1997

21

Using TLM principles to determine MOSFET contact and parasitic resistance

Geoffrey K Reeves, H.Barry Harrison

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 732 KB

english, 1997

22

Donor avalanche breakdown field in n-GaAs: Effect of concentration and lattice temperature

A Dargys, J Kundrotas

Journal:

Solid-State Electronics

Year:

1997

Language:

english

File:

PDF, 440 KB

english, 1997