Effect of deposition condition on wet and dry etch rates of...

Solid-State Electronics 1998 Vol. 42; Iss. 11

Effect of deposition condition on wet and dry etch rates of device quality inductively coupled plasma-chemically vapor deposited SiNx

Y.B Hahn, J.W Lee, K.D Mackenzie, D Johnson, S.J Pearton, F Ren
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Volume:
42
Year:
1998
Language:
english
Pages:
5
DOI:
10.1016/s0038-1101(98)00170-1
File:
PDF, 326 KB
english, 1998
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