Volume 42; Issue 11

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Solid-State Electronics
Volume 42; Issue 11

Solid-State Electronics

Volume 42; Issue 11

1

CO-implantation of Si and Be in SI GaAs for improved device performance

M.B. Dutt, Ram Nath, Rajendra Kumar, M.N. Sen, Vikram Kumar

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 286 KB

english, 1998

2

Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs

C.W Kuo, Y.K Su, H.H Lin, C.Y Tsia

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 409 KB

english, 1998

3

Inductively coupled plasma etchingof in-based compound semiconductorsin CH4/H2/Ar

J.A Diniz, J.W Swart, K.B Jung, J Hong, S.J Pearton

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 389 KB

english, 1998

4

Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films

A.Y Polyakov, N.B Smirnov, A.S Usikov, A.V Govorkov, B.V Pushniy

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 363 KB

english, 1998

5

Formation of NiSi-silicided shallow p+n junctions by BF2+ implantation into thin Ni or NiSi Films on Si substrates and subsequent anneal

M.H Juang, M.J Tsai, M.C Hu, C.J Yang

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 245 KB

english, 1998

6

Transient response of gallium arsenide and silicon solar cells under laser pulse

Raj K Jain, Geoffrey A Landis

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 204 KB

english, 1998

7

Signal quality in digitally modulated scaled laser diodes

S.M.K Thiyagarajan, A.F.J Levi

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 225 KB

english, 1998

8

A new charge pumping model considering bulk trap states in polysilicon thin film transistor

Kee-Jong Kim, Won-Kyu Park, Seong-Gyun Kim, Keong-Mun Lim, In-Gon Lim, Ohyun Kim

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 409 KB

english, 1998

9

Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures

A.F.M Anwar, RT Webster

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 292 KB

english, 1998

10

Monte Carlo study of Si–n-MOSFETs including the quantization of carriers

Yasuyuki Ohkura, Shin'ichiro Kimura, Shrin Ho, Sigeo Ihara

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 380 KB

english, 1998

11

ESD protection for slew-rate-controlled output buffer in a 0.5 μm CMOS SRAM technology

Ming-Dou Ker, Chau-Neng Wu

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 1.09 MB

english, 1998

12

Delay time analysis of AlGaAs/InxGa1−xAs (0.15≤×≤0.45) pseudomorphic HJFETs with InGaAs channel grown under suppressed In-surface segregation conditions

Takaki Niwa, Hideo Toyoshima, Kazuhiko Onda, Naoki Furuhata

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 335 KB

english, 1998

13

Electron injection effect on formation and decomposition of C–H complexes in C-doped GaAs Base of H+-implanted InGaP/GaAs HBTs

Akihiro Kawano, Kenji Imanishi, Takeshi Tomioka, Taisuke Iwai, Kazuaki Ishii, Yasuhiro Yamaguchi

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 431 KB

english, 1998

14

Effect of deposition condition on wet and dry etch rates of device quality inductively coupled plasma-chemically vapor deposited SiNx

Y.B Hahn, J.W Lee, K.D Mackenzie, D Johnson, S.J Pearton, F Ren

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 326 KB

english, 1998

15

Fowler–Nordheim tunneling in MOS capacitors with Si-implanted SiO2

Etsumasa Kameda, Toshihiro Matsuda, Yoshiko Emura, Takashi Ohzone

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 494 KB

english, 1998

16

Analytical model for C–V characteristics and transient response of submicrometer non-self-aligned GaAs MESFET

Sunita A. Chhokra, R.S. Gupta

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 352 KB

english, 1998

17

Beryllium doped InP/InGaAsP heterojunction bipolar transistors

N Shamir, D Ritter, C Cytermann

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 406 KB

english, 1998

18

A new set of initial conditions for fast and accurate calculation of base transit time and collector current density in bipolar transistors

Pingxi Ma, Shi-Li Zhang, Mikael Östling

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 164 KB

english, 1998

19

The effects of interlayer dielectric deposition and processing on the reliability of n-channel transistors

L Trabzon, O.O Awadelkarim, J Werking

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 229 KB

english, 1998

20

A comparison between the interface properties of N2O-nitrided and N2O-grown oxides

J.P Xu, P.T Lai, Y.C Cheng

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 183 KB

english, 1998

21

Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability

G. Beister, J. Maege, G. Erbert, G. Tränkle

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 297 KB

english, 1998

22

Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices

Naresh Thapar, B.Jayant Baliga

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 297 KB

english, 1998

23

Study of lateral polysilicon PN diodes C–V characteristics: Modeling and experiments

M Amrani, H Sehil, R Menezla, Z Benamara, F Raoult

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 450 KB

english, 1998

24

Analysis of the FP–JTE planar junction termination

Z.L Wu, Y.M Gao, S.J Liang, J.S Luo

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 276 KB

english, 1998

25

A study of the DRAM process simplification by using blanket memory cell source/drain implantation

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 284 KB

english, 1998

26

Effects of inversion layer quantization on channel profile engineering for nMOSFETs with 0.1 μm channel lengths

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 392 KB

english, 1998

27

Dispersive decay of positive oxide charge after high-field stress

Yongjun Wu, Changhua Tan, Mingzhen Xu, Jinyan Wang, Yangyuan Wang

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 191 KB

english, 1998

28

A new self-aligned and T-shaped gate technology for GaAs power MESFETs

Jong-Lam Lee, Jae Kyoung Mun, Haecheon Kim

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 314 KB

english, 1998

29

Temperature and frequency dependence of the capacitance of heavily irradiated silicon diodes

E. Borchi, M. Bruzzi, S. Pirollo, S. Sciortino

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 211 KB

english, 1998

30

Reliability performance for InGaAsP/InP laser diodes mounted on different sizes of heat blocks in TO packages

Hyun-Jae Yoon, Nack-Jin Chung, Min-Ho Choi, In-Shik Park, Jichai Jeong

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 283 KB

english, 1998

31

High frequency noise of MOSFETs I Modeling

C.H. Chen, M.J. Deen

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 668 KB

english, 1998

32

High frequency noise of MOSFETs. II. Experiments

C.H. Chen, M.J. Deen, Z.X. Yan, M. Schroter, C Enz

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 677 KB

english, 1998

33

Geometrical parameters and lateral channel doping profile extraction in a vertical IGBT by C–V measurements

Jongoh Kim, Bumman Kim

Journal:

Solid-State Electronics

Year:

1998

Language:

english

File:

PDF, 245 KB

english, 1998