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Volume 42; Issue 11
Main
Solid-State Electronics
Volume 42; Issue 11
Solid-State Electronics
Volume 42; Issue 11
1
CO-implantation of Si and Be in SI GaAs for improved device performance
M.B. Dutt
,
Ram Nath
,
Rajendra Kumar
,
M.N. Sen
,
Vikram Kumar
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 286 KB
Your tags:
english, 1998
2
Study and application of reactive ion etching on GaInP/InGaAs/GaInP quantum-well HEMTs
C.W Kuo
,
Y.K Su
,
H.H Lin
,
C.Y Tsia
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 409 KB
Your tags:
english, 1998
3
Inductively coupled plasma etchingof in-based compound semiconductorsin CH4/H2/Ar
J.A Diniz
,
J.W Swart
,
K.B Jung
,
J Hong
,
S.J Pearton
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 389 KB
Your tags:
english, 1998
4
Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films
A.Y Polyakov
,
N.B Smirnov
,
A.S Usikov
,
A.V Govorkov
,
B.V Pushniy
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 363 KB
Your tags:
english, 1998
5
Formation of NiSi-silicided shallow p+n junctions by BF2+ implantation into thin Ni or NiSi Films on Si substrates and subsequent anneal
M.H Juang
,
M.J Tsai
,
M.C Hu
,
C.J Yang
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 245 KB
Your tags:
english, 1998
6
Transient response of gallium arsenide and silicon solar cells under laser pulse
Raj K Jain
,
Geoffrey A Landis
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 204 KB
Your tags:
english, 1998
7
Signal quality in digitally modulated scaled laser diodes
S.M.K Thiyagarajan
,
A.F.J Levi
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 225 KB
Your tags:
english, 1998
8
A new charge pumping model considering bulk trap states in polysilicon thin film transistor
Kee-Jong Kim
,
Won-Kyu Park
,
Seong-Gyun Kim
,
Keong-Mun Lim
,
In-Gon Lim
,
Ohyun Kim
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 409 KB
Your tags:
english, 1998
9
Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures
A.F.M Anwar
,
RT Webster
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 292 KB
Your tags:
english, 1998
10
Monte Carlo study of Si–n-MOSFETs including the quantization of carriers
Yasuyuki Ohkura
,
Shin'ichiro Kimura
,
Shrin Ho
,
Sigeo Ihara
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 380 KB
Your tags:
english, 1998
11
ESD protection for slew-rate-controlled output buffer in a 0.5 μm CMOS SRAM technology
Ming-Dou Ker
,
Chau-Neng Wu
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 1.09 MB
Your tags:
english, 1998
12
Delay time analysis of AlGaAs/InxGa1−xAs (0.15≤×≤0.45) pseudomorphic HJFETs with InGaAs channel grown under suppressed In-surface segregation conditions
Takaki Niwa
,
Hideo Toyoshima
,
Kazuhiko Onda
,
Naoki Furuhata
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 335 KB
Your tags:
english, 1998
13
Electron injection effect on formation and decomposition of C–H complexes in C-doped GaAs Base of H+-implanted InGaP/GaAs HBTs
Akihiro Kawano
,
Kenji Imanishi
,
Takeshi Tomioka
,
Taisuke Iwai
,
Kazuaki Ishii
,
Yasuhiro Yamaguchi
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 431 KB
Your tags:
english, 1998
14
Effect of deposition condition on wet and dry etch rates of device quality inductively coupled plasma-chemically vapor deposited SiNx
Y.B Hahn
,
J.W Lee
,
K.D Mackenzie
,
D Johnson
,
S.J Pearton
,
F Ren
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 326 KB
Your tags:
english, 1998
15
Fowler–Nordheim tunneling in MOS capacitors with Si-implanted SiO2
Etsumasa Kameda
,
Toshihiro Matsuda
,
Yoshiko Emura
,
Takashi Ohzone
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 494 KB
Your tags:
english, 1998
16
Analytical model for C–V characteristics and transient response of submicrometer non-self-aligned GaAs MESFET
Sunita A. Chhokra
,
R.S. Gupta
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 352 KB
Your tags:
english, 1998
17
Beryllium doped InP/InGaAsP heterojunction bipolar transistors
N Shamir
,
D Ritter
,
C Cytermann
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 406 KB
Your tags:
english, 1998
18
A new set of initial conditions for fast and accurate calculation of base transit time and collector current density in bipolar transistors
Pingxi Ma
,
Shi-Li Zhang
,
Mikael Östling
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 164 KB
Your tags:
english, 1998
19
The effects of interlayer dielectric deposition and processing on the reliability of n-channel transistors
L Trabzon
,
O.O Awadelkarim
,
J Werking
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 229 KB
Your tags:
english, 1998
20
A comparison between the interface properties of N2O-nitrided and N2O-grown oxides
J.P Xu
,
P.T Lai
,
Y.C Cheng
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 183 KB
Your tags:
english, 1998
21
Non-radiative current in InGaAs/AlGaAs laser diodes as a measure of facet stability
G. Beister
,
J. Maege
,
G. Erbert
,
G. Tränkle
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 297 KB
Your tags:
english, 1998
22
Analytical model for the threshold voltage of Accumulation Channel MOS-Gate devices
Naresh Thapar
,
B.Jayant Baliga
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 297 KB
Your tags:
english, 1998
23
Study of lateral polysilicon PN diodes C–V characteristics: Modeling and experiments
M Amrani
,
H Sehil
,
R Menezla
,
Z Benamara
,
F Raoult
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 450 KB
Your tags:
english, 1998
24
Analysis of the FP–JTE planar junction termination
Z.L Wu
,
Y.M Gao
,
S.J Liang
,
J.S Luo
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 276 KB
Your tags:
english, 1998
25
A study of the DRAM process simplification by using blanket memory cell source/drain implantation
M.H Juang
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 284 KB
Your tags:
english, 1998
26
Effects of inversion layer quantization on channel profile engineering for nMOSFETs with 0.1 μm channel lengths
Samar Saha
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 392 KB
Your tags:
english, 1998
27
Dispersive decay of positive oxide charge after high-field stress
Yongjun Wu
,
Changhua Tan
,
Mingzhen Xu
,
Jinyan Wang
,
Yangyuan Wang
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 191 KB
Your tags:
english, 1998
28
A new self-aligned and T-shaped gate technology for GaAs power MESFETs
Jong-Lam Lee
,
Jae Kyoung Mun
,
Haecheon Kim
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 314 KB
Your tags:
english, 1998
29
Temperature and frequency dependence of the capacitance of heavily irradiated silicon diodes
E. Borchi
,
M. Bruzzi
,
S. Pirollo
,
S. Sciortino
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 211 KB
Your tags:
english, 1998
30
Reliability performance for InGaAsP/InP laser diodes mounted on different sizes of heat blocks in TO packages
Hyun-Jae Yoon
,
Nack-Jin Chung
,
Min-Ho Choi
,
In-Shik Park
,
Jichai Jeong
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 283 KB
Your tags:
english, 1998
31
High frequency noise of MOSFETs I Modeling
C.H. Chen
,
M.J. Deen
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 668 KB
Your tags:
english, 1998
32
High frequency noise of MOSFETs. II. Experiments
C.H. Chen
,
M.J. Deen
,
Z.X. Yan
,
M. Schroter
,
C Enz
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 677 KB
Your tags:
english, 1998
33
Geometrical parameters and lateral channel doping profile extraction in a vertical IGBT by C–V measurements
Jongoh Kim
,
Bumman Kim
Journal:
Solid-State Electronics
Year:
1998
Language:
english
File:
PDF, 245 KB
Your tags:
english, 1998
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