An investigation into the performance of diffusion barrier...

Solid-State Electronics 1999 Vol. 43; Iss. 6

An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

Vee S.C Len, R.E Hurley, N McCusker, D.W McNeill, B.M Armstrong, H.S Gamble
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Volume:
43
Year:
1999
Language:
english
Pages:
5
DOI:
10.1016/s0038-1101(99)00022-2
File:
PDF, 167 KB
english, 1999
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