Volume 43; Issue 6

Main
Solid-State Electronics
Volume 43; Issue 6

Solid-State Electronics

Volume 43; Issue 6

1

Editorial

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 62 KB

english, 1999

2

Interconnect technology trend for microelectronics

Ruichen Liu, Chien-Shing Pai, Emilio Martinez

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 132 KB

english, 1999

3

Factors which determine the orientation of CVD Al films grown on TiN

M. Avinun, W.D. Kaplan, M. Eizenberg, T. Guo, R. Mosely

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 125 KB

english, 1999

4

Study of Cu contamination during copper integration for subquarter micron technology

P Motte, J Torres, J Palleau, F Tardif, H Bernard

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 154 KB

english, 1999

5

The interaction of metals and barrier layers with fluorinated silicon oxides

Sarah E. Kim, Christoph Steinbrüchel

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 125 KB

english, 1999

6

Evaluation and localization of oxygen in thin TiN layers obtained by RTLPCVD from TiCl4–NH3–H2

L. Imhoff, A. Bouteville, H. de Baynast, J.C. Remy

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 120 KB

english, 1999

7

Observation of current polarity effect in stressing as-formed sub-micron Al–Si–Cu/TiW/TiSi2 contacts

Li-Zen Chen, Klaus Y-J Hsu

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 912 KB

english, 1999

8

Cobalt silicide thermal stability: from blanket thin film to submicrometer lines

A. Alberti, F. La Via, M.G. Grimaldi, S. Ravesi

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 152 KB

english, 1999

9

An investigation into the performance of diffusion barrier materials against copper diffusion using metal-oxide-semiconductor (MOS) capacitor structures

Vee S.C Len, R.E Hurley, N McCusker, D.W McNeill, B.M Armstrong, H.S Gamble

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 167 KB

english, 1999

10

Silicide reaction of Co with Si0.999C0.001

S Teichert, M Falke, H Giesler, G Beddies, H.-J Hinneberg, G Lippert, J Griesche, H.J Osten

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 115 KB

english, 1999

11

Characteristics of sputter-deposited TiN, ZrB2 and W2B diffusion barriers for advanced metallizations to GaAs

M Guziewicz, A Piotrowska, E Kamińska, K Gołaszewska, A Turos, E Mizera, A Winiarski, J Szade

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 171 KB

english, 1999

12

TEM studies of the microstructure evolution in plasma treated CVD TiN thin films used as diffusion barriers

S Ikeda, J Palleau, J Torres, B Chenevier, N Bourhila, R Madar

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 165 KB

english, 1999

13

Texturing, surface energetics and morphology in the C49–C54 transformation of TiSi2

Leo Miglio, M. Iannuzzi, M.G. Grimaldi, F. La Via, F. Marabelli, S. Bocelli, S. Santucci, A.R. Phani

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 149 KB

english, 1999

14

Sputtered tungsten films on polyimide, an application for X-ray masks

J Ligot, S Benayoun, J.J Hantzpergue, J.C Remy

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 124 KB

english, 1999

15

Polymer issues in nanoimprinting technique

Frank Gottschalch, Thomas Hoffmann, Clivia M Sotomayor Torres, Hubert Schulz, Hella-Christin Scheer

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 143 KB

english, 1999

16

Nanometer scale lithography on silicon, titanium and PMMA resist using scanning probe microscopy

Emmanuel Dubois, Jean-Luc Bubbendorff

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 166 KB

english, 1999

17

Nanometer patterning of epitaxial CoSi2/Si(100) by local oxidation

Q.T Zhao, M Dolle, L Kappius, F Klinkhammer, St Mesters, S Mantl

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 108 KB

english, 1999

18

Processing and characterisation of sol–gel deposited Ta2O5 and TiO2–Ta2O5 dielectric thin films

A Cappellani, J.L Keddie, N.P Barradas, S.M Jackson

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 111 KB

english, 1999

19

CoSi2 buffer films on single crystal silicon with Co ions pre-implanted surface layer for YBCO/CoSi2/Si heterostructures

I. Belousov, Peter Kus, S. Linzen, P. Seidel

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 178 KB

english, 1999

20

Excimer lamp-induced decomposition of platinum acetylacetonate films for electroless copper plating

Jun-Ying Zhang, Ian W Boyd

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 135 KB

english, 1999

21

Oxidation of rf plasma: hydrogenated crystalline Si

S Alexandrova, A Szekeres, D Dimova-Malinovska

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 129 KB

english, 1999

22

Thermal behavior of residual strain in silicon-on-insulator bonded wafer and effects on electron mobility

Tsutomu Iida, Takamasa Itoh, Yukio Takano, Adarsh Sandhu, Kazuyuki Shikama

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 131 KB

english, 1999

23

Porous silicon—mechanisms of growth and applications

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 443 KB

english, 1999

24

Two-dimensional nanowire array formation on Si substrate using self-organized nanoholes of anodically oxidized aluminum

S Shingubara, O Okino, Y Sayama, H Sakaue, T Takahagi

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 112 KB

english, 1999

25

Coulomb blockade: Poisson versus Pauli in a silicon quantum box

L Palun, G Lamouche, G Fishman

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 172 KB

english, 1999

26

Determination of the spectral behaviour of porous silicon based photodiodes

R.J Martı́n-Palma, R Guerrero-Lemus, J.D Moreno, J.M Martı́nez-Duart

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 214 KB

english, 1999

27

The formation of narrow nanocluster bands in Ge-implanted SiO2-layers

J von Borany, R Grötzschel, K.-H Heinig, A Markwitz, B Schmidt, W Skorupa, H.-J Thees

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 166 KB

english, 1999

28

Influence of carbon-containing contamination in the luminescence of porous silicon

R Guerrero-Lemus, F.A Ben Hander, J.D Moreno, R.J Martı́n-Palma, J.M Martı́nez-Duart, P Gómez-Garrido

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 127 KB

english, 1999

29

CdS doped-MOR type zeolite characterization

H Villavicencio Garcı́a, M Hernández Vélez, O Sánchez Garrido, J.M Martı́nez Duart, J Jiménez

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 126 KB

english, 1999