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Growth of device quality InGaP/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine
Hironobu Sai, Hajime Fujikura, Atsushi Hirama, Hideki HasegawaVolume:
43
Year:
1999
Language:
english
Pages:
6
DOI:
10.1016/s0038-1101(99)00101-x
File:
PDF, 165 KB
english, 1999