Volume 43; Issue 8

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Solid-State Electronics
Volume 43; Issue 8

Solid-State Electronics

Volume 43; Issue 8

1

Editorial

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 48 KB

english, 1999

2

Conference

Journal:

Solid-State Electronics

Year:

1999

File:

PDF, 40 KB

1999

3

Relationship between gate lag, power drift, and power slump of pseudomorphic high electron mobility transistors

James C.M Hwang

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 147 KB

english, 1999

4

Novel HEMT processing technologies and their circuit applications

I Adesida, A Mahajan, G Cueva, P Fay

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 166 KB

english, 1999

5

A new method for evaluation of surface recombination in heterojunction bipolar transistors by magnetotransport

Tetsuro Nozu, Tohru Sugiyama, Sadato Hongo, Kouhei Morizuka

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 194 KB

english, 1999

6

Resonant-tunneling mixed-signal circuit technology

A Seabaugh, B Brar, T Broekaert, F Morris, P van der Wagt, G Frazier

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 1.96 MB

english, 1999

7

Analysis of Sb-based resonant interband tunnel diodes for circuit modeling

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 120 KB

english, 1999

8

SiGe-HBTs for mobile communication

Andreas Schüppen

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 414 KB

english, 1999

9

n- and p-Type SiGe HFETs and circuits

U König, M Zeuner, G Höck, T Hackbarth, M Glück, T Ostermann, M Saxarra

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 192 KB

english, 1999

10

Process design for SiGe-HBTs prepared using cold-wall UHV/CVD

F Sato, T Hashimoto, T Tatsumi, T Tashiro

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 138 KB

english, 1999

11

Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE

Y Miyamoto, H Tobita, K Oshima, K Furuya

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 112 KB

english, 1999

12

Advanced heterostructure transistor technologies for wireless communications

N-L.Larry Wang, Barry Lin, Frank H-F Chau, Gordon Jackson, Zhengming Chen, C.P Lee

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 116 KB

english, 1999

13

A novel GaAs flip-chip power MODFET with high gain and efficiency

Tsuyoshi Tanaka, Hidetoshi Furukawa, Haruto Nagata, Daisuke Ueda

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 238 KB

english, 1999

14

A low power dissipation 0.4∼7 GHz transimpedance amplifier IC for SCM optical communication system

Kazuhisa Fujimoto, Hiroyuki Masato, Katsuhiko Kawashima, Mitsuru Nishitsuji, Masato Takata, Yoshiharu Kudo, Osamu Ishikawa

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 218 KB

english, 1999

15

44% efficiency operation of power heterojunction FET at near pinch-off for 3.5 V wide-band CDMA cellular phones

T.B Nishimura, N Iwata, Y Bito, G Hau

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 182 KB

english, 1999

16

Reliability investigation of heavily C-doped InGaP/GaAs HBTs operated under a very high current-density condition

K Mochizuki, T Oka, K Ouchi, T Tanoue

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 143 KB

english, 1999

17

Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications

Shawn S.H Hsu, Burhan Bayraktaroglu, Dimitris Pavlidis

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 230 KB

english, 1999

18

InGaP HBT technology for RF and microwave instrumentation

Tom Low, Tim Shirley, Craig Hutchinson, Gilbert Essilfie, Wes Whiteley, Bob Yeats, Don D'Avanzo

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 252 KB

english, 1999

19

Passivation of InP-based HBTs

R Driad, S.R Laframboise, Z.H Lu, S.P McAlister, W.R McKinnon

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 382 KB

english, 1999

20

GaN-based electronic devices

M.S Shur, R Gaska, A Bykhovski

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 189 KB

english, 1999

21

SiC and GaN wide bandgap semiconductor materials and devices

A.A Burk Jr., M.J O'Loughlin, R.R Siergiej, A.K Agarwal, S Sriram, R.C Clarke, M.F MacMillan, V Balakrishna, C.D Brandt

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 186 KB

english, 1999

22

Surface p-channel metal-oxide-semiconductor field effect transistors fabricated on hydrogen terminated (001) surfaces of diamond

A Hokazono, K Tsugawa, H Umezana, K Kitatani, H Kawarada

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 225 KB

english, 1999

23

GaN MODFET microwave power technology for future generation radar and communications systems

D.E Grider, N.X Nguyen, C Nguyen

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 135 KB

english, 1999

24

Progress towards ultra-wideband AlGaN/GaN MMICs

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 116 KB

english, 1999

25

Formation processes and properties of Schottky and ohmic contacts on n-type GaN for field effect transistor applications

Yuji Koyama, Tamotsu Hashizume, Hideki Hasegawa

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 198 KB

english, 1999

26

Transferred-substrate HBT integrated circuits

Mark Rodwell, Q Lee, D Mensa, J Guthrie, S.C Martin, R.P Smith, R Pullela, B Agarwal, S Jaganathan, T Mathew, S Long

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 258 KB

english, 1999

27

SiGe heterostructure CMOS circuits and applications

E.H.C Parker, T.E Whall

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 207 KB

english, 1999

28

InP-based complementary HBT amplifiers for use in communication systems

Donald Sawdai, Dimitris Pavlidis

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 154 KB

english, 1999

29

A 77 K analog monolithic HEMT amplifier for high-speed Josephson-semiconductor interface circuit

Naoki Harada, Yuji Awano, Kohki Hikosaka, Naoki Yokoyama

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 159 KB

english, 1999

30

Improvement of 0.1 μm-gate InGaAs/AlGaAs HEMT performance by suppression of electro-chemical etching in deionized water

Tomoyuki Ohshima, Ryoji Shigemasa, Masakatsu Sato, Masanori Tsunotani, Tamotsu Kimura

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 245 KB

english, 1999

31

Short gate-length InAlAs/InGaAs MODFETs with asymmetry gate-recess grooves: electrochemical fabrication and performance

D Xu, T Suemitsu, H Yokoyama, Y Umeda, Y Yamane, T Enoki, Y Ishii

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 216 KB

english, 1999

32

First demonstration of low temperature grown InP-channel HFET transferred onto GaAs substrate

M Kunze, L.H Lee, H.Y Chung, E Kohn

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 148 KB

english, 1999

33

Growth of device quality InGaP/GaAs heterostructures by gas source molecular beam epitaxy using tertiarybutylphosphine

Hironobu Sai, Hajime Fujikura, Atsushi Hirama, Hideki Hasegawa

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 165 KB

english, 1999

34

Potential profile measurement of GaAs MESFETs passivated with low-temperature grown GaAs layer by Kelvin probe force microscopy

K Matsunami, T Takeyama, T Usunami, S Kishimoto, K Maezawa, T Mizutani, M Tomizawa, P Schmid, K.M Lipka, E Kohn

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 230 KB

english, 1999

35

Photoemission studies on heterostructure bipolar transistors

Fritz Schuermeyer, Peter J Zampardi, Peter M Asbeck

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 145 KB

english, 1999

36

In-situ characterization technique of compound semiconductor heterostructure growth and device processing steps based on UHV contactless capacitance-voltage measurement

Hiroshi Takahashi, Toshiyuki Yoshida, Morimichi Mutoh, Takamasa Sakai, Hideki Hasegawa

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 225 KB

english, 1999

37

A preliminary study of MIS diodes with nm-thin GaAs-oxide layers

Tomoyuki Sugimura, Tatsutoshi Tsuzuku, Takayuki Katsui, Yuki Kasai, Takao Inokuma, Shoushin Hashimoto, Kouichi Iiyama, Saburo Takamiya

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 184 KB

english, 1999

38

Applications of HEMT devices in space communication systems and equipment: a European perspective

Massimo Claudio Comparini, Marziale Feudale, Andrea Suriani

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 347 KB

english, 1999

39

RF device trends for mobile communications

Masahiro Muraguchi

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 290 KB

english, 1999

40

MM-wave integrated circuits and their applications to communication and automotive systems

P. Quentin, C. Dourlens, M. Camiade, D. Pons

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 232 KB

english, 1999

41

MM-wave HEMT based circuits and their system applications

Jürgen Dickmann, Michael Berg, Volker Ziegler, C Wölk, R Deufel

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 153 KB

english, 1999

42

Technologies for making full use of high-speed IC performance in the development of 40-Gb/s optical receivers

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 170 KB

english, 1999

43

SiGe HBTs and ICs for optical-fiber communication systems

Katsuyoshi Washio

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 208 KB

english, 1999

44

Heterostructure circuit applications in optical communications

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 119 KB

english, 1999

45

Heterostructure-based high-speed/high-frequency electronic circuit applications

P.J. Zampardi, K. Runge, R.L. Pierson, J.A. Higgins, R. Yu, B.T. McDermott, N. Pan

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 418 KB

english, 1999

46

A 0.1-μm MHEMT millimeter-wave IC technology designed for manufacturability

Hans Rohdin, Arlene Wakita, Avelina Nagy, Virginia Robbins, Nick Moll, Chung-yi Su

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 320 KB

english, 1999

47

Wafer bonding technology for optoelectronic integrated devices

Hiroshi Wada, Hironori Sasaki, Takeshi Kamijoh

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 250 KB

english, 1999

48

Suppression of GDS frequency dispersion in heterojunction FETs with a partially depleted p-type buffer layer

Yasuo Ohno, Satoru Ohkubo, Kensuke Kasahara, Kazuaki Kunihiro, Yuji Takahashi

Journal:

Solid-State Electronics

Year:

1999

Language:

english

File:

PDF, 229 KB

english, 1999

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