Conditions of ion implantation into thin amorphous Si gate...

Solid-State Electronics 2000 Vol. 44; Iss. 6

Conditions of ion implantation into thin amorphous Si gate layers for suppressing threshold voltage shift

Kunihiro Suzuki, Ritsuo Sudo
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Volume:
44
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0038-1101(99)00326-3
File:
PDF, 126 KB
english, 2000
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