Volume 44; Issue 6

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Solid-State Electronics
Volume 44; Issue 6

Solid-State Electronics

Volume 44; Issue 6

1

Technology CAD based statistical simulation of MOSFETs

Naoyuki Shigyo, Naoki Wakita, Tetsuji Morishita, Kenichi Sugawara, Yoshinori Asahi

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 504 KB

english, 2000

2

Levelized incomplete LU method and its application to semiconductor device simulation

Yao-Tsung Tsai, Chun-Yi Lee, Mu-Kai Tsai

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 224 KB

english, 2000

3

Hot carrier reliability characteristics of a bend-gate MOSFET

Woosung Lee, Hyunsang Hwang

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 173 KB

english, 2000

4

Channel and well design of quarter-micron high performance retrograde well pMOSFETs

Swe Toe-Naing, Yeo Kiat-Seng

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 304 KB

english, 2000

5

A Gummel–Poon model for pnp heterojunction bipolar transistors with a compositionally graded base

S. Datta, K.P. Roenker, M.M. Cahay

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 255 KB

english, 2000

6

Stress-induced high-field gate leakage current in ultra-thin gate oxide

Jianlin Wei, Lingfeng Mao, Mingzhen Xu, Changhua Tan, Xiaorong Duan

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 119 KB

english, 2000

7

Evaluation of transport properties of ozonized poly/mono interfaces in polysilicon emitter bipolar transistors

S. Niel, A. Chantre, P. Llinarès, M. Laurens, G. Vincent

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 186 KB

english, 2000

8

Aspect ratio calculation in n-channel MOSFETs with a gate-enclosed layout

A Giraldo, A Paccagnella, A Minzoni

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 308 KB

english, 2000

9

Large-signal microwave performance of GaN-based NDR diode oscillators

Egor Alekseev, Dimitris Pavlidis

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 482 KB

english, 2000

10

Charge retention of scaled SONOS nonvolatile memory devices at elevated temperatures

Yang (Larr) Yang, Marvin H. White

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 281 KB

english, 2000

11

Germanium junction field effect transistor for cryogenic applications

N.C Das, C Monroy, M Jhabvala

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 148 KB

english, 2000

12

An accurate relationship for determining the key parameters of MOSFETs by proportional difference operator method

Jinyan Wang, Mingzhen Xu, Changhua Tan

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 168 KB

english, 2000

13

Circuit model for traveling wave semiconductor laser amplifiers

Weiyou Chen, Aijun Wang, Yejin Zhang, Caixia Liu, Shiyong Liu

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 170 KB

english, 2000

14

Device parameters extracted in the linear region of MOSFET by comparing with the exact gradual channel model

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 243 KB

english, 2000

15

The integration of high-side and low-side LIGBTs on partial silicon-on-insulator

D.M Garner, F Udrea, H.T Lim, W.I Milne

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 481 KB

english, 2000

16

Grain and grain-boundary control of the transfer characteristics of large-grain polycrystalline silicon thin-film transistors

F.V Farmakis, J Brini, G Kamarinos, C.T Angelis, C.A Dimitriadis, M Miyasaka, T Ouisse

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 122 KB

english, 2000

17

Improved analytical modeling of polysilicon depletion in MOSFETs for circuit simulation

Jean-Michel Sallese, Matthias Bucher, Christophe Lallement

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 269 KB

english, 2000

18

The formation of stable ohmic contacts to MBE grown CdTe layers

M Yousaf, D Sands, C.G Scott

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 109 KB

english, 2000

19

A general bulk-limited transport analysis of a 10 nm-thick oxide stress-induced leakage current

B. De Salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot, G. Reimbold

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 596 KB

english, 2000

20

Graded-channel fully depleted Silicon-On-Insulator nMOSFET for reducing the parasitic bipolar effects

Marcelo Antonio Pavanello, João Antonio Martino, Denis Flandre

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 357 KB

english, 2000

21

A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation

J.M. Sallese, A.-S. Porret

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 164 KB

english, 2000

22

Magnetoelectronic latching Boolean gate

Mark Johnson, Brian R Bennett, Philip R Hammar, Michael M Miller

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 381 KB

english, 2000

23

Transconductance of large grain excimer laser-annealed polycrystalline silicon thin film transistors

C.T. Angelis, C.A. Dimitriadis, F.V. Farmakis, J. Brini, G. Kamarinos, M. Miyasaka, I. Stoemenos

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 218 KB

english, 2000

24

Proportional difference operator method and its application in studying subthreshold behavior of MOSFETs

Changhua Tan, Mingzhen Xu, Ziou Wang

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 215 KB

english, 2000

25

Luminescence of an InGaN/GaN multiple quantum well light-emitting diode

J.K Sheu, G.C Chi, Y.K Su, C.C Liu, C.M Chang, W.C Hung, M.J Jou

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 159 KB

english, 2000

26

Effects of thin oxide in metal–semiconductor and metal–insulator–semiconductor epi-GaAs Schottky diodes

Mantu Kumar Hudait, S.B. Krupanidhi

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 206 KB

english, 2000

27

A novel resonant tunneling base transistor with bi-directional negative-differential-resistance phenomena

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 162 KB

english, 2000

28

A simulation study on the DC characteristics of the Ga0.52In0.48P/In0.2Ga0.8As/Ga0.52In0.48P double heterojunction pseudomorphic high electron mobility transistor

S.F Yoon, Adele H.T Kam, B.P Gay, H.Q Zheng

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 297 KB

english, 2000

29

Impact of gate workfunction on device performance at the 50 nm technology node

Indranil De, Deepak Johri, Anadi Srivastava, C.M. Osburn

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 217 KB

english, 2000

30

Complex random telegraph signals in 0.06 μm2 MDD n-MOSFETs

Nuditha Vibhavie Amarasinghe, Zeynep Çelik-Butler

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 188 KB

english, 2000

31

Conditions of ion implantation into thin amorphous Si gate layers for suppressing threshold voltage shift

Kunihiro Suzuki, Ritsuo Sudo

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 126 KB

english, 2000

32

Electrical characterization of Si/Si1−xGex/Si quantum well heterostructures using a MOS capacitor

S. Maikap, L.K. Bera, S.K. Ray, S. John, S.K. Banerjee, C.K. Maiti

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 213 KB

english, 2000

33

The indium content in metamorphic InxAl1−xAs/InxGa1−xAs HEMTs on GaAs substrate: a new structure parameter

S. Bollaert, Y. Cordier, M. Zaknoune, H. Happy, V. Hoel, S. Lepilliet, D. Théron, A. Cappy

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 275 KB

english, 2000

34

Characteristics of an epitaxial Schottky barrier diode for all levels of injection

M.M.Shahidul Hassan

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 199 KB

english, 2000

35

Verification of overlap and fringing capacitance models for MOSFETs

Naoki Wakita, Naoyuki Shigyo

Journal:

Solid-State Electronics

Year:

2000

Language:

english

File:

PDF, 311 KB

english, 2000

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