Analysis and Modeling of the Narrow Width Effect in...

IEEE Transactions on Electron Devices 2015 / 4 Vol. 62; Iss. 4

Analysis and Modeling of the Narrow Width Effect in Gate-First HKMG nMOS Transistors

Sivanaresh, M. Satya, Mohapatra, Nihar Ranjan
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2015.2398870
Date:
April, 2015
File:
PDF, 1.94 MB
english, 2015
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