Mobility Investigations on Strained 30-nm High- $k$ Metal Gate MOSFETs by Geometrical Magnetoresistance Effect
Beister, Jurgen, Wachowiak, Andre, Boschke, Roman, Herrmann, Tom, Uhlarz, Marc, Mikolajick, ThomasVolume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2015.2423974
Date:
June, 2015
File:
PDF, 1.40 MB
english, 2015