Volume 62; Issue 6

IEEE Transactions on Electron Devices

Volume 62; Issue 6

1

Simplistic Simulation-Based Device-VT-Targeting Technique to Determine Technology High-Density LELE-Gate-Patterned FinFET SRAM in Sub-10 nm Era

Sakhare, Sushil Sudam, Miyaguchi, Kenichi, Raghavan, Praveen, Mercha, Abdelkarim

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.27 MB

english, 2015

2

Analysis of High- $\kappa $ Spacer Asymmetric Underlap DG-MOSFET for SOC Application

Koley, Kalyan, Dutta, Arka, Saha, Samar K., Sarkar, Chandan K.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.45 MB

english, 2015

3

New Assessment Methodology Based on Energy–Delay–Yield Cooptimization for Nanoscale CMOS Technology

Jiang, Xiaobo, Wang, Junyao, Wang, Xingsheng, Wang, Runsheng, Cheng, Binjie, Asenov, Asen, Wei, Lan, Huang, Ru

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.79 MB

english, 2015

4

Variability Aware Simulation Based Design- Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM Cooptimization

Asenov, Asen, Cheng, Binjie, Wang, Xingsheng, Brown, Andrew Robert, Millar, Campbell, Alexander, Craig, Amoroso, Salvatore Maria, Kuang, Jente B., Nassif, Sani R.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 8.11 MB

english, 2015

5

Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled Technology

Kang, Wang, Zhang, Liuyang, Klein, Jacques-Olivier, Zhang, Youguang, Ravelosona, Dafine, Zhao, Weisheng

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.11 MB

english, 2015

6

CMOS Device Performance Improvement Using Flood Buried-Contact Plasma Doping Processes

Qin, Shu, Hu, Yongjun Jeff, McTeer, Allen

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.94 MB

english, 2015

7

Analysis of Quantized Electrical Characteristics of Microscale TiO2 Ink-Jet Printed Memristor

Samardzic, Natasa, Mionic, Marijana, Dakic, Bojan, Hofmann, Heinrich, Dautovic, Stanisa, Stojanovic, Goran

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.67 MB

english, 2015

8

A Comparison of the Degradation in RF Performance Due to Device Interconnects in Advanced SiGe HBT and CMOS Technologies

Schmid, Robert L., Ulusoy, Ahmet Cagri, Zeinolabedinzadeh, Saeed, Cressler, John D.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.14 MB

english, 2015

9

Dark Current Transport and Avalanche Mechanism in HgCdTe Electron-Avalanche Photodiodes

Qiu, Wei-Cheng, Hu, Wei-Da, Chen, Lu, Lin, Chun, Cheng, Xiang-Ai, Chen, Xiao-Shuang, Lu, Wei

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.60 MB

english, 2015

10

500 °C Bipolar SiC Linear Voltage Regulator

Kargarrazi, Saleh, Lanni, Luigia, Saggini, Stefano, Rusu, Ana, Zetterling, Carl-Mikael

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.27 MB

english, 2015

11

Modeling of Self-Aligned Vertical ZnO Thin-Film Transistors

Sun, Kaige G., Nelson, Shelby F., Jackson, Thomas N.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.41 MB

english, 2015

12

Compact Model of Subvolume MTJ and Its Design Application at Nanoscale Technology Nodes

Zhang, Yue, Yan, Bonan, Kang, Wang, Cheng, Yuanqing, Klein, Jacques-Olivier, Zhang, Youguang, Chen, Yiran, Zhao, Weisheng

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.00 MB

english, 2015

13

On the Ballistic Performance of InGaSb XOI FET: Impact of Channel Thickness and Interface States

Alam, Md. Nur Kutubul, Islam, Muhammad Shaffatul, Kibria, Md. Golam, Islam, Md. Rafiqul

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.45 MB

english, 2015

14

Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-Assist

Hu, Vita Pi-Ho, Fan, Ming-Long, Su, Pin, Chuang, Ching-Te

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.84 MB

english, 2015

15

Dye-Sensitized Solar Cells Based on Porous Hollow Tin Oxide Nanofibers

Sigdel, Sudhan, Elbohy, Hytham, Gong, Jiawei, Adhikari, Nirmal, Sumathy, Krishnan, Qiao, Hui, Wei, Qufu, Sayyad, Muhammad Hassan, Zai, Jiantao, Qian, Xuefeng, Qiao, Qiquan

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.78 MB

english, 2015

16

Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet Photodiodes

Yadav, Aniruddh Bahadur, Pandey, Amritanshu, Somvanshi, Divya, Jit, Satyabrata

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.94 MB

english, 2015

17

1/ $f$ Noise in Mid-Wavelength Infrared Detectors With InAs/GaSb Superlattice Absorber

Ciura, Lukasz, Kolek, Andrzej, Wrobel, Jaroslaw, Gawron, Waldemar, Rogalski, Antoni

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.25 MB

english, 2015

18

Scaling of TG-FinFETs: 3-D Monte Carlo Simulations in the Ballistic and Quasi-Ballistic Regimes

Elthakeb, Ahmed T., Elhamid, Hamdy Abd, Ismail, Yehea

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.71 MB

english, 2015

19

Eight-FinFET Fully Differential SRAM Cell With Enhanced Read and Write Voltage Margins

Salahuddin, Shairfe Muhammad, Chan, Mansun

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.89 MB

english, 2015

20

Normally-off Logic Based on Resistive Switches—Part I: Logic Gates

Balatti, Simone, Ambrogio, Stefano, Ielmini, Daniele

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.19 MB

english, 2015

21

Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching

Padovani, Andrea, Larcher, Luca, Pirrotta, Onofrio, Vandelli, Luca, Bersuker, Gennadi

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.89 MB

english, 2015

22

Design of a 22-nm FinFET-Based SRAM With Read Buffer for Near-Threshold Voltage Operation

Park, Juhyun, Yang, Younghwi, Jeong, Hanwool, Song, Seung Chul, Wang, Joseph, Yeap, Geoffrey, Jung, Seong-Ook

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.88 MB

english, 2015

23

Normally-off Logic Based on Resistive Switches—Part II: Logic Circuits

Balatti, Simone, Ambrogio, Stefano, Ielmini, Daniele

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.89 MB

english, 2015

24

Random Variation Analysis and Variation-Aware Design of Symmetric Tunnel Field-Effect Transistor

Lee, Hyunjae, Park, Seulki, Lee, Youngtaek, Nam, Hyohyun, Shin, Changhwan

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 6.34 MB

english, 2015

25

Impact of Variation in Nanoscale Silicon and Non-Silicon FinFETs and Tunnel FETs on Device and SRAM Performance

Agrawal, Nidhi, Liu, Huichu, Arghavani, Reza, Narayanan, Vijay, Datta, Suman

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.16 MB

english, 2015

26

Electrical Activation, Deactivation, and Reactivation Mechanism Study of Plasma Doping Processes

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.44 MB

english, 2015

27

AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs

Yang, Shu, Liu, Shenghou, Lu, Yunyou, Liu, Cheng, Chen, Kevin J.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.00 MB

english, 2015

28

Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate Dielectric

Lu, Xing, Ma, Jun, Jiang, Huaxing, Liu, Chao, Xu, Peiqiang, Lau, Kei May

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.38 MB

english, 2015

29

Development of 2-D Boron Nitride Nanosheets UV Photoconductive Detectors

Aldalbahi, Ali, Feng, Peter

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 925 KB

english, 2015

30

Variation-Aware Figure of Merit for Integrated Circuit in Near-Threshold Region

Jeong, Hanwool, Yang, Younghwi, Song, Seung Chul, Wang, Joseph, Yeap, Geoffrey, Jung, Seong-Ook

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.20 MB

english, 2015

31

Full-Band 3-D Monte Carlo Simulation of InAs Nanowires and High Frequency Analysis

Popescu, Bogdan, Popescu, Dan, Saraniti, Marco, Lugli, Paolo

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.07 MB

english, 2015

32

SOI FinFET nFET-to-pFET Tracking Variability Compact Modeling and Impact on Latch Timing

Deng, Jie, Rahman, Ardasheir, Thoma, Rainer, Schneider, Peter W., Johnson, Jim, Trombley, Henry, Lu, Ning, Williams, Richard Q., Nayfeh, Hasan M., Zhao, Kai, Robison, Russ, Guan, Ximeng, Zamdmer, Noah

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.00 MB

english, 2015

33

Analysis of the Excellent Memory Disturb Characteristics of a Hourglass-Shaped Filament in Al2O3/Cu-Based CBRAM Devices

Belmonte, Attilio, Celano, Umberto, Redolfi, Augusto, Fantini, Andrea, Muller, Robert, Vandervorst, Wilfried, Houssa, Michel, Jurczak, Malgorzata, Goux, Ludovic

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.73 MB

english, 2015

34

Foreword Special Issue on Variation Aware Technology and Circuit Co-Design

Song, Stanley S. C., Shang, Huiling, Ikeda, Shuji

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 973 KB

english, 2015

35

Design of a Coherent Receiver Based on InAs Electron Avalanche Photodiode for Free-Space Optical Communications

Wen, Ke, Zhao, Yanli, Gao, Jing, Zhang, Shibo, Tu, Junjie

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.07 MB

english, 2015

36

Subthreshold Swing Reduction by Double Exponential Control Mechanism in an MOS Gated-MIS Tunnel Transistor

Liao, Chien-Shun, Hwu, Jenn-Gwo

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.23 MB

english, 2015

37

Anode Materials for High-Average-Power Operation in Vacuum at Gigawatt Instantaneous Power Levels

Lynn, Curtis F., Parson, Jonathan M., Scott, Michael C., Calico, Steve E., Dickens, James C., Neuber, Andreas A., Mankowski, John J.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.23 MB

english, 2015

38

Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport Equation

Sharma, Prateek, Tyaginov, Stanislav, Wimmer, Yannick, Rudolf, Florian, Rupp, Karl, Bina, Markus, Enichlmair, Hubert, Park, Jong-Mun, Minixhofer, Rainer, Ceric, Hajdin, Grasser, Tibor

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.10 MB

english, 2015

39

Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology Cooptimization

Gerrer, Louis, Brown, Andrew R., Millar, Campbell, Hussin, Razaidi, Amoroso, Salvatore Maria, Cheng, Binjie, Reid, Dave, Alexander, Craig, Fried, David, Hargrove, Michael, Greiner, Ken, Asenov, Asen

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 8.42 MB

english, 2015

40

Techniques for the Development of Multistage Depressed Collectors

Latha, A. Mercy, Sharma, Rajendra Kumar, Kumar, Yogesh, Ghosh, Sanjay Kumar

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.15 MB

english, 2015

41

AM-FPD 15-International Workshop on Active-Matrix Flatpanel Displays and Devices

Journal:

IEEE Transactions on Electron Devices

Year:

2015

File:

PDF, 1.46 MB

2015

42

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 943 KB

english, 2015

43

Breakdown Voltage Model and Electrical Characteristics of CMOS Compatible RESURF STI Drain Extended MOS Transistors

Tsai, Hung-Chih, Yadav, Yogendra, Liou, Ruey-Hsin, Wu, Kuo-Ming, Lin, Yi-Chin, Lien, Chenhsin

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.20 MB

english, 2015

44

Point-Contacting by Localized Dielectric Breakdown With Breakdown Fields Described by the Weibull Distribution

Western, Ned J., Perez-Wurfl, Ivan, Wenham, Stuart R., Bremner, Stephen P.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.71 MB

english, 2015

45

Active-Matrix GaN Micro Light-Emitting Diode Display With Unprecedented Brightness

Herrnsdorf, Johannes, McKendry, Jonathan J. D., Zhang, Shuailong, Xie, Enyuan, Ferreira, Ricardo, Massoubre, David, Zuhdi, Ahmad Mahmood, Henderson, Robert K., Underwood, Ian, Watson, Scott, Kelly, An

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.53 MB

english, 2015

46

Engineering Electrical Interfaces to Silicon via Indium Solder

Panas, Robert M., Culpepper, Martin L.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.29 MB

english, 2015

47

Mobility Investigations on Strained 30-nm High- $k$ Metal Gate MOSFETs by Geometrical Magnetoresistance Effect

Beister, Jurgen, Wachowiak, Andre, Boschke, Roman, Herrmann, Tom, Uhlarz, Marc, Mikolajick, Thomas

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.40 MB

english, 2015

48

A Mobility Correction Approach for Overcoming Artifacts in Atomistic Drift-Diffusion Simulation of Nano-MOSFETs

Amoroso, Salvatore Maria, Adamu-Lema, Fikru, Brown, Andrew R., Asenov, Asen

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.30 MB

english, 2015

49

Worst Case Sampling Method to Estimate the Impact of Random Variation on Static Random Access Memory

Lee, Gyo Sub, Shin, Changhwan

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.95 MB

english, 2015

50

2015 IEEE International Electron Devices Meeting

Journal:

IEEE Transactions on Electron Devices

Year:

2015

File:

PDF, 1.37 MB

2015

51

Sensitivity Improvement in GaAsSb-Based Heterojunction Backward Diodes by Optimized Doping Concentration

Takahashi, Tsuyoshi, Sato, Masaru, Nakasha, Yasuhiro, Hara, Naoki

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.85 MB

english, 2015

52

Role of Junction Geometry in Determining the Rectification Performance of Nanostructured TiO2-Based p-n Junctions

Hazra, Arnab, Bhattacharyya, Partha

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.89 MB

english, 2015

53

UV Enhanced Field Emission Properties of Ga-Doped ZnO Nanosheets

Liu, Yi-Hsing, Young, Sheng-Joue, Ji, Liang-Wen, Chang, Shoou-Jinn

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.00 MB

english, 2015

54

250 V Thin-Layer SOI Technology With Field pLDMOS for High-Voltage Switching IC

Qiao, Ming, Zhang, Kang, Zhou, Xin, Zou, Jie, Zhang, Bo, Li, Zhaoji

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.64 MB

english, 2015

55

Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS Diode

Vobecky, Jan, Hazdra, Pavel, Popelka, Stanislav, Sharma, Rupendra Kumar

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.62 MB

english, 2015

56

Front cover

Journal:

IEEE Transactions on Electron Devices

Year:

2015

File:

PDF, 470 KB

2015

57

42nd IEEE PVSC

Journal:

IEEE Transactions on Electron Devices

Year:

2015

File:

PDF, 1.27 MB

2015

58

Blank page

Journal:

IEEE Transactions on Electron Devices

Year:

2015

File:

PDF, 8 KB

2015

59

Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on $V_{\textrm {th}}$ Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo Approach

Noda, Taiji, Vrancken, Christa, Vandervorst, Wilfried

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.11 MB

english, 2015

60

Modeling of Dynamic Operation of T-RAM Cells

Resnati, Davide, Monzio Compagnoni, Christian, Mulaosmanovic, Halid, Castellani, Niccolo, Carnevale, Gianpietro, Fantini, Paolo, Ventrice, Domenico, Lacaita, Andrea L., Spinelli, Alessandro S., Benven

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.84 MB

english, 2015

61

Relating the Experimental Ionization Coefficients in Semiconductors to the Nonlocal Ionization Coefficients

Cheong, Jeng Shiuh, Hayat, Majeed M., Zhou, Xinxin, David, John P. R.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.08 MB

english, 2015

62

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 116 KB

english, 2015

63

Single Photon Avalanche Diode Collection Efficiency Enhancement via Peripheral Well-Controlled Field

Savuskan, Vitali, Gal, Lior, Cristea, David, Javitt, Michael, Feiningstein, Amos, Leitner, Tomer, Nemirovsky, Yael

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.30 MB

english, 2015

64

Impacts of Random Telegraph Noise (RTN) on Digital Circuits

Luo, Mulong, Wang, Runsheng, Guo, Shaofeng, Wang, Jing, Zou, Jibin, Huang, Ru

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.30 MB

english, 2015

65

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 151 KB

english, 2015

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