Sensitivity Improvement in GaAsSb-Based Heterojunction...

IEEE Transactions on Electron Devices 2015 / 6 Vol. 62; Iss. 6

Sensitivity Improvement in GaAsSb-Based Heterojunction Backward Diodes by Optimized Doping Concentration

Takahashi, Tsuyoshi, Sato, Masaru, Nakasha, Yasuhiro, Hara, Naoki
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Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2015.2423851
Date:
June, 2015
File:
PDF, 1.85 MB
english, 2015
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