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250 V Thin-Layer SOI Technology With Field pLDMOS for High-Voltage Switching IC
Qiao, Ming, Zhang, Kang, Zhou, Xin, Zou, Jie, Zhang, Bo, Li, ZhaojiVolume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2015.2421292
Date:
June, 2015
File:
PDF, 2.64 MB
english, 2015