Analysis of the turn-on process in 6 kV 4H-SiC junction...

Semiconductor Science and Technology 2005 / 01 Vol. 20; Iss. 1

Analysis of the turn-on process in 6 kV 4H-SiC junction diodes

Mnatsakanov, T T, Levinshtein, M E, Ivanov, P A, Palmour, J W, Das, M, Agarwal, A K
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Volume:
20
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/20/1/010
Date:
January, 2005
File:
PDF, 267 KB
english, 2005
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