Performance Evaluation of Silicon and Germanium Ultrathin...

IEEE Electron Device Letters 2015 / 7 Vol. 36; Iss. 7

Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)

Jhan, Yi-Ruei, Thirunavukkarasu, Vasanthan, Wang, Cheng-Ping, Wu, Yung-Chun
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Volume:
36
Language:
english
Journal:
IEEE Electron Device Letters
DOI:
10.1109/LED.2015.2437715
Date:
July, 2015
File:
PDF, 1.02 MB
english, 2015
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