Porous GaN/SiC templates for homoepitaxial growth: effect...

Semiconductor Science and Technology 2005 / 01 Vol. 20; Iss. 1

Porous GaN/SiC templates for homoepitaxial growth: effect of the built-in stress on the formation of porous structures

Mynbaeva, M G, Mynbaev, K D, Sarua, A, Kuball, M
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Volume:
20
Language:
english
Journal:
Semiconductor Science and Technology
DOI:
10.1088/0268-1242/20/1/008
Date:
January, 2005
File:
PDF, 655 KB
english, 2005
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