Real time spectroscopic ellipsometry monitoring of the SiC...

Thin Solid Films 2000 Vol. 364; Iss. 1-2

Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces

T. Wöhner, V. Cimalla, Th. Stauden, J.A. Schaefer, J. Pezoldt
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Volume:
364
Year:
2000
Language:
english
Pages:
5
DOI:
10.1016/s0040-6090(99)00918-9
File:
PDF, 306 KB
english, 2000
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