SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD-PLATE SiC...

International Journal of High Speed Electronics and Systems 2004 / 09 Vol. 14; Iss. 3

SIMULATION STUDY ON BREAKDOWN BEHAVIOR OF FIELD-PLATE SiC MESFETs

CHA, HO-YOUNG, CHOI, Y. C., EASTMAN, LESTER F., SPENCER, MICHAEL G.
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Volume:
14
Language:
english
Journal:
International Journal of High Speed Electronics and Systems
DOI:
10.1142/s0129156404002995
Date:
September, 2004
File:
PDF, 260 KB
english, 2004
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