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A Comparison of 1200 V Normally-OFF & Normally-on Vertical Trench SiC Power JFET Devices
Casady, Jeff B., Sheridan, David C., Kelley, Robin L., Bondarenko, Vlad, Ritenour, AndrewVolume:
679-680
Language:
english
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/msf.679-680.641
Date:
March, 2011
File:
PDF, 495 KB
english, 2011