Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-Oxide
Ohshima, Takeshi, Lee, Kin Kiong, Ohi, Akihiko, Yoshikawa, Masahito, Itoh, HisayoshiVolume:
389-393
Year:
2002
Journal:
Materials Science Forum
DOI:
10.4028/www.scientific.net/MSF.389-393.1093
File:
PDF, 343 KB
2002