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Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric
Mahapatra, R., Maji, S., Horsfall, A.B., Wright, N.G.Volume:
138
Language:
english
Journal:
Microelectronic Engineering
DOI:
10.1016/j.mee.2015.03.008
Date:
April, 2015
File:
PDF, 1.16 MB
english, 2015