Microelectronic Engineering

1

Manipulation of polarization effect to engineer III-nitride HEMTs for normally-off operation

Yao, Yung-Chi, Huang, Chun-Ying, Lin, Tai-Yuan, Cheng, Li-Lien, Liu, Ching-Yun, Wang, Mei-Tan, Hwang, Jung-Min, Lee, Ya-Ju

Journal:

Year:

2015

Language:

english

File:

PDF, 2.12 MB

english, 2015

2

A memristive diode for neuromorphic computing

Wang, Xiaolei, Shao, Qi, Ku, Pui Sze, Ruotolo, Antonio

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 678 KB

english, 2015

3

An FPGA based human detection system with embedded platform

Hsiao, Pei-Yung, Lin, Shih-Yu, Huang, Shih-Shinh

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.04 MB

english, 2015

4

High-electrical-resistivity thermally-conductive phase change materials prepared by adding nanographitic fillers into paraffin

Wu, Chia-Hung, Pu, Nen-Wen, Liao, Chia-Wei, Wu, Bo-Rong, Liu, Yih-Ming, Ger, Ming-Der

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.73 MB

english, 2015

5

Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy source/drain stressors

Lee, Chia-Feng, He, Ren-Yu, Chen, Kuan-Ting, Cheng, Shu-Ying, Chang, Shu-Tong

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 864 KB

english, 2015

6

Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

Juan, Pi-Chun, Wang, Jyh-Liang, Hsieh, Tsang-Yen, Lin, Cheng-Li, Yang, Chia-Ming, Shye, Der-Chi, Liao, Shu-Chuan

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.00 MB

english, 2015

7

Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer

Ruan, Dun-Bao, Chang-Liao, Kuei-Shu, Li, Chen-Chien, Lu, Chun-Chang, Liao, Yu-Liang, Chen, Li-Ting, Li, Yan-Lin, Fu, Chung-Hao, Hsieh, Tsung-Lin

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.11 MB

english, 2015

8

Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

Xu, Wanjie, Wong, Hei, Kakushima, Kuniyuki, Iwai, Hiroshi

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.37 MB

english, 2015

9

Comparison of electrical and physical characteristics between Gd2O3 and Ti-doped GdTixOy trapping layers

Kao, Chuan Haur, Chen, Hsiang, Chen, Chun Chi, Chen, Ching Pang, Wang, Jung Ji, Chen, Chian You, Chen, Yun Ti, Lin, Jun Han, Chu, Yu Cheng

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 2.25 MB

english, 2015

10

Pulsed laser induced microbubble in gold nanorod colloid

Yu, Shang-Yung, Tsai, Shiao-Wen, Chen, Yun-Ju, Liaw, Jiunn-Woei

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.12 MB

english, 2015

11

The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

Juan, Pi-Chun, Wang, Jyh-Liang, Hsieh, Tsang-Yen, Lin, Cheng-Li, Yang, Chia-Ming, Shye, Der-Chi

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.32 MB

english, 2015

12

Material and electrical characterizations of high-k Ta2O5 dielectric material deposited on polycrystalline silicon and single crystalline substrate

Kao, Chyuan-Haur, Chen, Hsiang, Chen, Chian-You

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 2.28 MB

english, 2015

13

On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology

Wong, Hei, Iwai, Hiroshi

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 7.71 MB

english, 2015

14

Performance improvement of lithium ion batteries using magnetite–graphene nanocomposite anode materials synthesized by a microwave-assisted method

Wu, Chia-Hung, Pu, Nen-Wen, Wu, Pei-Ju, Peng, You-Yu, Shih, Chia-Nan, Chen, Chun-Yu, Liu, Yih-Ming, Ger, Ming-Der

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.88 MB

english, 2015

15

Effects of HfO2/SiON/SiN stacked trapping layer on operation characteristics of poly-Si flash memory devices

Fang, Hsin-Kai, Chang-Liao, Kuei-Shu, Chen, Chun-Yuan, Ho, Hao-Wei

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.21 MB

english, 2015

16

Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

Lee, M.H., Hsu, S.-M., Shen, J.-D., Liu, C.

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.02 MB

english, 2015

17

Microelectronics Engineering Editorial

Chi-Wah, Kok, Wing-Shan, Tam

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 138 KB

english, 2015

18

Using oscillation voltage to drive dynamic-domino circuits for designing low-power bio-implanted electronics

Cheng, Ching-Hwa

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 2.56 MB

english, 2015

19

Inside Front Cover - Editorial Board

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 29 KB

english, 2015

20

Author Index

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 143 KB

english, 2015

22

Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

Chiu, Hsien-Chin, Lin, Wen-Yu, Chou, Chia-Yi, Yang, Shih-Hsien, Mai, Kai-Di, Chiu, Pei-chin, Hsueh, W.J., Chyi, Jen-Inn

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.05 MB

english, 2015

23

Thickness dependence of Al2O3/HfO2/Al2O3 stacked tunneling layers on gadolinium oxide nanocrystal nonvolatile memory

Wang, Jer-Chyi, Chen, Chia-Hsin, Lin, Chih-Ting

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.54 MB

english, 2015

24

Adjusting dopant concentrations in solution process to optimize the white phosphorescent organic light-emitting diodes

Tsai, Yu-Sheng, Chittawanij, Apisit, Hong, Lin-Ann, Ou, Chih-Yuan, Juang, Fuh-Shyang, Wang, Ching-Chiun, Lai, Shih-Hsiang

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.18 MB

english, 2015

25

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment

Lee, Win-Der, Wang, Mu-Chun, Wang, Shea-Jue, Lan, Wen-How, Yang, Jie-Min, Huang, L.S.

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.50 MB

english, 2015

26

Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric

Mahapatra, R., Maji, S., Horsfall, A.B., Wright, N.G.

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.16 MB

english, 2015

27

Plasmon-mediated excitation modulation of FRET by silver nanoshell

Liaw, Jiunn-Woei, Chen, Bae-Renn, Kuo, Mao-Kuen

Journal:

Microelectronic Engineering

Year:

2015

Language:

english

File:

PDF, 1.43 MB

english, 2015

Volume 138

Manipulation of polarization effect to engineer III-nitride HEMTs for normally-off operation

A memristive diode for neuromorphic computing

An FPGA based human detection system with embedded platform

High-electrical-resistivity thermally-conductive phase change materials prepared by adding nanographitic fillers into paraffin

Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy source/drain stressors

Self-assembly La-rich nanocrystals in metal-gate MIS structures for non-volatile memories

Improved electrical characteristics of high-k gated MOSFETs with post-growth treatment on interfacial layer

Quasi-analytical model of ballistic cylindrical surrounding gate nanowire MOSFET

Comparison of electrical and physical characteristics between Gd2O3 and Ti-doped GdTixOy trapping layers

Pulsed laser induced microbubble in gold nanorod colloid

The physical and electrical characterizations of Cr-doped BiFeO3 ferroelectric thin films for nonvolatile memory applications

Material and electrical characterizations of high-k Ta2O5 dielectric material deposited on polycrystalline silicon and single crystalline substrate

On the scaling of subnanometer EOT gate dielectrics for ultimate nano CMOS technology

Performance improvement of lithium ion batteries using magnetite–graphene nanocomposite anode materials synthesized by a microwave-assisted method

Effects of HfO2/SiON/SiN stacked trapping layer on operation characteristics of poly-Si flash memory devices

Stress distribution of IGZO TFTs under mechanical rolling using finite element method for flexible applications

Microelectronics Engineering Editorial

Using oscillation voltage to drive dynamic-domino circuits for designing low-power bio-implanted electronics

Inside Front Cover - Editorial Board

Table of Contents

Author Index

Device stress evaluation of InAs/AlSb HEMT on silicon substrate with refractory iridium Schottky gate metal

Thickness dependence of Al2O3/HfO2/Al2O3 stacked tunneling layers on gadolinium oxide nanocrystal nonvolatile memory

Adjusting dopant concentrations in solution process to optimize the white phosphorescent organic light-emitting diodes

Comparison of electrical characteristics for SiONx and HfZrOx gate dielectrics of MOSFETs with decoupled plasma nitridation treatment

Temperature impact on switching characteristics of resistive memory devices with HfOx/TiOx/HfOx stack dielectric

Plasmon-mediated excitation modulation of FRET by silver nanoshell