Replacement and Rearrangement of an Oxide Lattice by...

IEEE Transactions on Electron Devices 2015 / 9 Vol. 62; Iss. 9

Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium–Zinc-Oxide Thin-Film Transistors

Jung, Tae Soo, Kim, Si Joon, Kim, Chul Ho, Jung, Joohye, Na, Jaewon, Sabri, Mardhiah Muhamad, Kim, Hyun Jae
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/ted.2015.2455558
Date:
September, 2015
File:
PDF, 1.28 MB
english, 2015
Conversion to is in progress
Conversion to is failed