Volume 62; Issue 9

IEEE Transactions on Electron Devices

Volume 62; Issue 9

1

Self-Heat Characterizations and Modeling of Multifinger nMOSFETs for RF-CMOS Applications

Aoki, Hitoshi, Kobayashi, Haruo

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.06 MB

english, 2015

2

Characterization of CMOS Metamaterial Transmission Line by Compact Fractional-Order Equivalent Circuit Model

Yang, Chang, Yu, Hao, Shang, Yang, Fei, Wei

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.52 MB

english, 2015

3

Replacement and Rearrangement of an Oxide Lattice by Germanium Doping in Solution-Processed Indium–Zinc-Oxide Thin-Film Transistors

Jung, Tae Soo, Kim, Si Joon, Kim, Chul Ho, Jung, Joohye, Na, Jaewon, Sabri, Mardhiah Muhamad, Kim, Hyun Jae

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.28 MB

english, 2015

4

Thermal Impedance Measurement on Different Chip Arrangements for Various Multichip LEDs Application

Mah, Jian Wen, Lee, Boon Kiat, Devarajan, Mutharasu

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.71 MB

english, 2015

5

Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics

Wei, Wei, Zhou, Xin, Deokar, Geetanjali, Kim, Haechon, Belhaj, Mohamed Moez, Galopin, Elisabeth, Pallecchi, Emiliano, Vignaud, Dominique, Happy, Henri

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.29 MB

english, 2015

6

Charge Relaxation Resistances in Gated Graphene Nanoribbons

Shi, Yi-Jian, Lan, Jin, Ye, En-Jia, Sui, Wen-Quan, Zhao, Xuean

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 816 KB

english, 2015

7

A New Subthreshold Current Model for Junctionless Trigate MOSFETs to Examine Interface-Trapped Charge Effects

Chiang, Te-Kuang

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.50 MB

english, 2015

8

Comment on “A Compact Analytic Model of the Strain Field Induced by Through Silicon Vias”

Chen, Cheng-fu, Quan, Zhili

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.18 MB

english, 2015

9

Reply to “Comment on ‘A Compact Analytic Model of the Strain Field Induced by Through ilicon Vias”’

Jan, Sun-Rong, Chou, Tien-Pei, Yeh, Che-Yu, Liu, Chee Wee, Goldstein, Robert V., Gorodtsov, Valentin A., Shushpannikov, Pavel S.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 55 KB

english, 2015

10

ON-state Reliability of Cu Atom Switch Under Current–Temperature Stress

Tada, Munehiro, Okamoto, Koichiro, Sakamoto, Toshitsugu, Hada, Hiromitsu

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.68 MB

english, 2015

11

Reliability of Crystalline Indium–Gallium–Zinc-Oxide Thin-Film Transistors Under Bias Stress With Light Illumination

Park, Kyung, Park, Hyun-Woo, Shin, Hyun Soo, Bae, Jonguk, Park, Kwon-Shik, Kang, Inbyeong, Chung, Kwun-Bum, Kwon, Jang-Yeon

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.57 MB

english, 2015

12

Tunnel Junction Engineering for Optimized Metallic Single-Electron Transistor

El Hajjam, Khalil G., Bounouar, Mohamed Amine, Baboux, Nicolas, Ecoffey, Serge, Guilmain, Marc, Puyoo, Etienne, Francis, Laurent A., Souifi, Abdelkader, Drouin, Dominique, Calmon, Francis

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.83 MB

english, 2015

13

Observation of Discrete Frequency Hopping in MW-Class Gyrotrons During Long-Pulse Operation

Schlaich, Andreas, Gantenbein, Gerd, Illy, Stefan, Jelonnek, John, Thumm, Manfred

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 4.00 MB

english, 2015

14

Engineering of Flexo- and Gravure-Printed Indium–Zinc-Oxide Semiconductor Layers for High-Performance Thin-Film Transistors

Spiehl, Dieter, Haming, Marc, Sauer, Hans Martin, Bonrad, Klaus, Dorsam, Edgar

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.90 MB

english, 2015

15

Graphene Transistor-Based Active Balun Architectures

Zimmer, Thomas, Fregonese, Sebastien

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.74 MB

english, 2015

16

Write and Erase Threshold Voltage Interdependence in Resistive Switching Memory Cells

Ghosh, Gargi, Orlowski, Marius K.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.97 MB

english, 2015

17

Differential Structure for Temperature Sensing Based on Conductive Polymer Composites

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.04 MB

english, 2015

18

Vanadium Oxide Thin-Film Variable Resistor-Based RF Switches

Pan, KuanChang, Wang, Weisong, Shin, Eunsung, Freeman, Kelvin, Subramanyam, Guru

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.15 MB

english, 2015

19

Influence of Nanoscale Morphology on Performance of Inverted Structure Metallated Conjugated Polymer Solar Cells

Mohammad, Lal, Mitul, Abu, Wang, Qi, Venkatesan, Swaminathan, Khatiwada, Devendra, Dubey, Ashish, Ho, Cheuk-Lam, Wong, Wai-Yeung, Qiao, Qiquan

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.21 MB

english, 2015

20

High- ${Q}$ Inductors Utilizing Thick Metals and Dense-Tapered Spirals

Vanukuru, Venkata Narayana Rao

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.61 MB

english, 2015

21

Transverse Mode Spurious Resonance Suppression in Lamb Wave MEMS Resonators: Theory, Modeling, and Experiment

Zhang, Hongxiang, Liang, Ji, Zhou, Xiaoyan, Zhang, Hao, Zhang, Daihua, Pang, Wei

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.41 MB

english, 2015

22

TCAD Studies on the Determination of Diffusion Length for the Planar-Collector EBIC Configuration With Any Size of the Schottky Contact

Tan, Chee Chin, Ong, Vincent K. S., Radhakrishnan, K.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.37 MB

english, 2015

23

Characteristics of Polycrystalline Si Thin Film—Solid Solubility and Mobility Study

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.89 MB

english, 2015

24

Original Field Plate to Decrease the Maximum Electric Field Peak for High-Voltage Diamond Schottky Diode

Arbess, Houssam, Isoird, Karine, Hamady, Saleem, Zerarka, Moustafa, Planson, Dominique

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.44 MB

english, 2015

25

SiO2 Free HfO2 Gate Dielectrics by Physical Vapor Deposition

Jamison, Paul C., Tsunoda, Takaaki, Vo, Tuan Anh, Li, Juntao, Jagannathan, Hemanth, Shinde, Sanjay R., Paruchuri, Vamsi K., Gall, Daniel

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.00 MB

english, 2015

26

Nonlinearity and Asymmetry for Device Selection in Cross-Bar Memory Arrays

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.76 MB

english, 2015

27

An Improved Virtual-Source-Based Transport Model for Quasi-Ballistic Transistors—Part II: Experimental Verification

Rakheja, Shaloo, Lundstrom, Mark S., Antoniadis, Dimitri A.

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.85 MB

english, 2015

28

Effects of Channel Width on High-Frequency Characteristics of Trigate Poly-Si Thin-Film Transistors Fabricated by Microwave Annealing

Hu, Hsin-Hui, Wang, Kai-Min

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.62 MB

english, 2015

29

Leti-UTSOI2.1: A Compact Model for UTBB-FDSOI Technologies—Part II: DC and AC Model Description

Poiroux, Thierry, Rozeau, O., Scheer, Patrick, Martinie, Sebastien, Jaud, Marie-Anne, Minondo, M., Juge, Andre, Barbe, J. C., Vinet, Maud

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.33 MB

english, 2015

30

A New Method for Accurate Extraction of Source Resistance and Effective Mobility in Nanoscale Multifinger nMOSFETs

Guo, Jyh-Chyrun, Lo, Yi-Zen

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.30 MB

english, 2015

31

In0.53Ga0.47As-Based nMOSFET Design for Low Standby Power Applications

Bhuwalka, Krishna K., Wu, Zhenhua, Noh, Hyeon-Kyun, Lee, Wonsok, Cantoro, Mirco, Heo, Yeon-Cheol, Jin, Seonghoon, Choi, Woosung, Kwon, Uihui, Maeda, Shigenobu, Lee, Keun-Ho, Park, Young-Kwan

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 3.57 MB

english, 2015

32

An Optimized Structure of 4H-SiC U-Shaped Trench Gate MOSFET

Wang, Ying, Tian, Kai, Hao, Yue, Yu, Cheng-Hao, Liu, Yan-Juan

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.10 MB

english, 2015

33

Design of ESD Protection Device for $K\!/\!Ka$ -Band Applications in Nanoscale CMOS Process

Lin, Chun-Yu, Chang, Rong-Kun

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.22 MB

english, 2015

34

A Study of High-Voltage p-Type MOSFET Degradation Under AC Stress

Lee, Dongjun, Na, Chungje, Lee, Chiwoo, Lee, Changsub, Hur, Sunghoi, Song, Duheon, Choi, Junghyuk, Choi, Byoungdeog

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 1.12 MB

english, 2015

35

Investigation of Hysteresis Phenomenon in Floating-Gate NAND Flash Memory Cells

Joe, Sung-Min, Lee, Jong-Ho

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.11 MB

english, 2015

36

Blank page

Journal:

IEEE Transactions on Electron Devices

Year:

2015

File:

PDF, 3 KB

2015

37

Analytical Modeling for a Novel Triple RESURF LDMOS With N-Top Layer

Qiao, Ming, Wang, Yuru, Zhou, Xin, Jin, Feng, Wang, Huihui, Wang, Zhuo, Li, Zhaoji, Zhang, Bo

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 2.84 MB

english, 2015

38

Performance Improvement of the GaSb Thermophotovoltaic Cells With n-Type Emitters

Tang, Liangliang, Fraas, Lewis M., Liu, Zhuming, Xu, Chang, Chen, Xingying

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 4.47 MB

english, 2015

39

2016 IEEE international reliability physics symposium

Journal:

IEEE Transactions on Electron Devices

Year:

2015

File:

PDF, 1.23 MB

2015

40

IEEE Transactions on Electron Devices publication information

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 149 KB

english, 2015

41

2015 IEEE International Electron Devices Meeting

Journal:

IEEE Transactions on Electron Devices

Year:

2015

File:

PDF, 1.36 MB

2015

42

Table of contents

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 166 KB

english, 2015

43

IEEE Transactions on Electron Devices information for authors

Journal:

IEEE Transactions on Electron Devices

Year:

2015

Language:

english

File:

PDF, 114 KB

english, 2015

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