Graphene FETs With Aluminum Bottom-Gate Electrodes and Its Natural Oxide as Dielectrics
Wei, Wei, Zhou, Xin, Deokar, Geetanjali, Kim, Haechon, Belhaj, Mohamed Moez, Galopin, Elisabeth, Pallecchi, Emiliano, Vignaud, Dominique, Happy, HenriVolume:
62
Language:
english
Journal:
IEEE Transactions on Electron Devices
DOI:
10.1109/TED.2015.2459657
Date:
September, 2015
File:
PDF, 1.29 MB
english, 2015