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A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides
D. Goguenheim, A. Bravaix, D. Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. MeinertzhagenVolume:
36
Year:
1997
Language:
english
Pages:
4
DOI:
10.1016/s0167-9317(97)00035-x
File:
PDF, 301 KB
english, 1997