Volume 36; Issue 1-4

Main
Microelectronic Engineering
Volume 36; Issue 1-4

Microelectronic Engineering

Volume 36; Issue 1-4

1

After CMOS: in anticipation of innovative devices on Si

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 602 KB

english, 1997

2

Reliability and integration of ultra-thin gate dielectrics for advanced CMOS

D.A. Buchanan, S.-H. Lo

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 621 KB

english, 1997

3

Relation between trap creation and breakdown during tunnelling current stressing of Sub 3 nm gate oxide

M. Depas, M.M. Heyns

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 252 KB

english, 1997

4

Defect instability in ultra-thin oxides on silicon

L. Xie, K.R. Farmer, D.A. Buchanan

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 317 KB

english, 1997

5

Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)

H.C. Lu, E.P. Gusev, T. Gustafsson, D. Brasen, M.L. Green, E. Garfunkel

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 272 KB

english, 1997

6

Positron annihilation as a tool for the study of defects in the MOS system

J.M.M. de Nijs, M. Clement, H. Schut, A. van Veen

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 506 KB

english, 1997

7

Evolution of electronically active defects during the formation of SiSiO2 interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements

H. Angermann, W. Henrion, M. Rebien, K. Kliefoth, D. Fischer, J.-T. Zettler

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 307 KB

english, 1997

8

Charge pumping characterization of transistors with common gate, source and bulk pads

G. Reimbold, B. Marchand, D. Blachier

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 267 KB

english, 1997

9

Physical and electrical analysis of silicon dioxide thin films produced by electron-cyclotron resonance chemical-vapour deposition

D. Landheer, L.-Å. Ragnarsson, S. Belkouch

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 685 KB

english, 1997

10

Use of carbon-free Ta2O5 thin-films as a gate insulator

R.A.B. Devine, C. Chaneliere, J.L. Autran, B. Balland, P. Paillet, J.L. Leray

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 276 KB

english, 1997

11

Electrical reliability of ultra thin remote plasma deposited oxides on silicon

L.-Å. Ragnarsson, P. Lundgren, A. Jauhiainen

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 215 KB

english, 1997

12

UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation

L.S. How Kee Chun, J.L. Courant, A. Falcou, P. Ossart, G. Post

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 322 KB

english, 1997

13

Plasma-assisted formation of low defect density silicon carbide-silicon dioxide, SiCSiO2, interfaces

A. Gölz, G. Lucovsky, K. Koh, D. Wolfe, H. Niimi, H. Kurz

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 349 KB

english, 1997

14

Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si+ ion implantation

P. Normand, D. Tsoukalas, E. Kapetanakis, J.A. Van Den Berg, D.G. Armour, J. Stoemenos

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 271 KB

english, 1997

15

Location of individual traps in DRAM cell transistors by charge pumping technique

S. Pierunek, J.L. Autran, B. Leroy, L.M. Gaborieau, B. Balland

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 279 KB

english, 1997

16

High Temperature Oxide (HTO) for non volatile memories applications

Ph. Candelier, B. Guillaumot, F. Mondon, G. Reimbold, H. Achard, F. Martin

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 282 KB

english, 1997

17

Properties of Al2O3-films deposited on silicon by atomic layer epitaxy

Per Ericsson, Stefan Bengtsson, Jarmo Skarp

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 293 KB

english, 1997

18

Device physics and simulation of Metal/Ferroelectric-Film/p-type silicon capacitors

Hisham Z. Massoud

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 258 KB

english, 1997

19

Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions

E. Cartier, J.C. Tsang, M.V. Fischetti, D.A. Buchanan

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 264 KB

english, 1997

20

Blue and violet photoluminescence from high-dose Si+- and Ge+-implanted silicon dioxide layers

L. Rebohle, I.E. Tyschenko, H. Fröb, K. Leo, R.A. Yankov, J. von Borany, G.A. Kachurin, W. Skorupa

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 320 KB

english, 1997

21

Electrical, optical and luminescent properties of Si3N4 films containing Si nanoclusters

V.G. Baru, S. Bayliss, A.P. Chernushich, M.I. Elinson, P. Harris, V.A. Jitov, V.I. Pokalyakin, G.V. Stepanov, L.Yu. Zaharov

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 225 KB

english, 1997

22

Characterization of silicon LEDs integrated with oxidized porous silicon SOI

M. Balucani, V. Bondarenko, A. Dorofeev, F. Ermalitski, N. Kazuchits, G. Maiello, L. Masini, S. Melnikov, S. La Monica, S. Volchek, A. Ferrari

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 279 KB

english, 1997

23

Electrical properties of end-group functionalised Self-Assembled Monolayers

J. Collet, M. Bonnier, O. Bouloussa, F. Rondelez, D. Vuillaume

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 280 KB

english, 1997

24

Enriching of the Si3N4-thermal oxide interface by excess silicon in

V.A. Gritsenko, Yu.N. Morokov, Yu.N. Novikov, I.P. Petrenko, S.N. Svitasheva, H. Wong

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 100 KB

english, 1997

25

Bohm trajectories for the modeling of tunneling devices

J. Suñé, X. Oriols, J.J. García-García, F. Martín, T. González, J. Mateos, D. Pardo

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 290 KB

english, 1997

26

Impurity gettering effects in separation-by-implanted-oxygen (SIMOX) wafers: what getters what, where and how

R.A. Yankov, J.R. Kaschny, P.F.P. Fichtner, A. Mücklich, U. Kreißig, W. Skorupa

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 313 KB

english, 1997

27

The planar photomagnetic effect in SOI structure and magnetosensor based on it

V.N. Dobrovolsky

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 167 KB

english, 1997

28

The characterisation of Bonded Silicon on Insulator (BSOI) structures using low temperature scanning cathodoluminescence (CL) and secondary ion mass spectrometry (SIMS)

GM Williams, JP Newey, V Nayar

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 279 KB

english, 1997

29

A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides

D. Goguenheim, A. Bravaix, D. Vuillaume, F. Mondon, Ph. Candelier, M. Jourdain, A. Meinertzhagen

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 301 KB

english, 1997

30

Stress induced leakage current in ultra-thin gate oxides after constant current stress

A. Scarpa, G. Ghibaudo, G. Ghidini, G. Pananakakis, A. Paccagnella

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 216 KB

english, 1997

31

Analysis of near-interfacial SiO2 traps using photon stimulated electron tunneling

V.V. Afanas'ev, A. Stesmans

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 305 KB

english, 1997

32

Electrical properties of ultrathin RTCVD oxinitride films in n and p-channel MOSFET's

Y. Maneglia, D. Bauza, Y. Morfouli, G. Ghibaudo

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 223 KB

english, 1997

33

Quasi-breakdown in ultrathin gate dielectrics

A. Halimaoui, O. Brière, G. Ghibaudo

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 323 KB

english, 1997

34

Oxide thickness dependence of hole trap generation in MOS structures under high-field electron injection

Tomasz Brożek, Eric B. Lum, Chand R. Viswanathan

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 291 KB

english, 1997

35

SiO2 as an insulator for SiC devices

C.I. Harris, V.V. Afanas'ev

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 707 KB

english, 1997

36

Thin oxide growth on 6H-silicon carbide

Vickram R. Vathulya, William E. Wagner, Floyd C. Miller, Marvin H. White

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 249 KB

english, 1997

37

Silicon nitride as dielectric in the low temperature SiGe HBT processing

Q.W. Ren, L.K. Nanver, C.R. de Boer, H.W. van Zeijl

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 315 KB

english, 1997

38

Capacitance measurements on SiC MOS structures for the determination of interface properties

Mahdad Sadeghi, Olof Engström

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 284 KB

english, 1997

39

The role of oxygen and nitrogen at the SiO2SiC interface

A. Gölz, S. Scharnholz, H. Kurz

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 234 KB

english, 1997

40

Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films

Kwang Soo Seol, Toshifumi Karasawa, Yoshimichi Ohki, Hiroyuki Nishikawa, Makoto Takiyama

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 190 KB

english, 1997

41

Properties of Eδ′ center in microelectronic grade oxide films

M.E. Zvanut, P.J. Macfarlane

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 325 KB

english, 1997

42

Point defect generation in SiO2 by interaction with SiO at elevated temperatures

A. Stesmans, V.V. Afanas'ev

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 302 KB

english, 1997

43

Minimization of sub-oxide transition regions at SiSiO2 interfaces by 900°C rapid thermal annealing

G. Lucovsky, A. Banerjee, B. Hinds, B. Claflin, K. Koh, H. Yang

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 357 KB

english, 1997

44

Nitridation impact on thin oxide charge trapping

M. Alessandri, C. Clementi, B. Crivelli, G. Ghidini, F. Pellizzer, F. Martin, M. Imai, H. Ikegawa

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 267 KB

english, 1997

45

Impact of the polysilicon doping level on the properties of the silicon/oxide interface in polysilicon/oxide/silicon capacitor structures

C. Leveugle, P.K. Hurley, A. Mathewson, S. Moran, E. Sheehan, A. Kalnitsky, A. Lepert, I. Beinglass, M. Venkatesan

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 305 KB

english, 1997

46

Potential fluctuations due to Pb centres at the SiSiO2 interface

MJ Uren, KM Brunson, JH Stathis, E Cartier

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 275 KB

english, 1997

47

Statistical evaluation of random telegraph signal amplitudes in sub-μm MOSFETs

H.H. Mueller, M. Schulz

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 271 KB

english, 1997

48

Generation and annealing of hot hole induced interface states

I.S. Al-kofahi, J.F. Zhang, G. Groeseneken

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 352 KB

english, 1997

49

Basic mechanisms involved in the Smart-Cut® process

B. Aspar, M. Bruel, H. Moriceau, C. Maleville, T. Poumeyrol, A.M. Papon, A. Claverie, G. Benassayag, A.J. Auberton-Hervé, T. Barge

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 604 KB

english, 1997

50

Radiation-induced H+ trapping in buried SiO2

K. Vanheusden, J.R. Schwank, W.L. Warren, D.M. Fleetwood, R.A.B. Devine

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 332 KB

english, 1997

51

Electrical investigation of the silicon/diamond interface

B. Edholm, J. Olsson, N. Keskitalo, L. Vestling

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 284 KB

english, 1997

52

Rapid annealing measurements in fully-depleted NMOS/SOI

O. Gruber, V. Ferlet-Cavrois, Ph. Paillet, O. Musseau, C. Raynaud, J.L. Pelloie

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 273 KB

english, 1997

53

Gate oxide characterization with Ballistic Electron Emission Microscopy

R. Ludeke, H.J. Wen

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 697 KB

english, 1997

54

The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime

Hisham Z. Massoud, James P. Shiely

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 289 KB

english, 1997

55

Impact of oxide charge buildup on Fowler-Nordheim tunneling current characteristics in a MOS structure

R. Kies, G. Ghibaudo, G. Pananakakis

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 215 KB

english, 1997

56

Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

C.A. Billman, P.M. Lenahan, W. Weber

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 241 KB

english, 1997

57

Hot carrier effects in FLASH

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 464 KB

english, 1997

58

Effects of hot-carrier degradation in analog CMOS circuits

Roland Thewes, Werner Weber

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 671 KB

english, 1997

59

Trade-offs between tunneling and hot-carrier injection in short channel floating gate MOSFETs

Luca Selmi, Andrea Ghetti, Roberto Bez, Enrico Sangiorgi

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 248 KB

english, 1997

60

Light emission microscopy for thin oxide reliability analysis

Charles Leroux, Denis Blachier, Olivier Briere, Gilles Reimbold

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 300 KB

english, 1997

61

Impact of tunnel-oxide nitridation on endurance and read-disturb characteristics of Flash E2PROM devices

J. De Blauwe, D. Wellekens, J. Van Houdt, R. Degraeve, L. Haspeslagh, G. Groeseneken, H.E. Maes

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 325 KB

english, 1997

62

Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation

A. Bravaix, D. Goguenheim, D. Vuillaume, N. Revil, M. Varrot, P. Mortini

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 309 KB

english, 1997

63

New insights on the charging and discharging of electron traps created by homogeneous electron injection in gate oxide

G. Auriel, J.P. Dubuc, B. Sagnes, J. Oualid, D. Vuillaume

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 321 KB

english, 1997

64

Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETs

B.Y. Kim, I.M. Liu, H.F. Luan, M. Gardner, J. Fulford, D.L. Kwong

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 257 KB

english, 1997

65

Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 261 KB

english, 1997

66

Qbd− dependencies of ultrathin gate oxides on large area capacitors

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 246 KB

english, 1997

67

Quantitative model of the thickness dependence of breakdown in ultra-thin oxides

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 303 KB

english, 1997

68

On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics

D.A. Buchanan, J.H. Stathis, E. Cartier, D.J. DiMaria

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 271 KB

english, 1997

69

Advantages and limitations of silicon-on-insulator technology in radiation environments

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 636 KB

english, 1997

70

Properties of the buried oxide layer in SIMOX structures

A.G. Revesz, H.L. Hughes

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 605 KB

english, 1997

71

Contactless measurement of the Si-buried oxide interfacial charges in SOI wafers with surface photovoltage technique

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 532 KB

english, 1997

72

Submicron SOI-MOSFETs for high temperature operation (300–600K)

G. Reichert, C. Raynaud, O. Faynot, F. Balestra, S. Cristoloveanu

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 265 KB

english, 1997

73

Research of high-temperature instability processes in buried dielectric of full depleted SOI MOSFET's

A.N. Nazarov, J.-P. Colinge, I.P. Barchuk

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 309 KB

english, 1997

74

Diffusion model for high-temperature off-state currents in SOI MOSFETs

T.E. Rudenko, V.I. Kilchitskaya, A.N. Rudenko

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 281 KB

english, 1997

75

Determination of the thicknesses of gate oxide and active layer in SOI structures from CV measurements

J. Gibki, A. Jakubowski, M. Jurczak

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 164 KB

english, 1997

76

Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77 K

Marcelo Antonio Pavanello, João Antonio Martino, Jean-Pierre Colinge

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 233 KB

english, 1997

77

Electron energy quantization effects in the very thin film GAA SOI transistor

B. Majkusiak, T. Janik

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 278 KB

english, 1997

78

Thin BOX SIMOX silicon-on-insulator substrates for radiation tolerent advanced electronics

L.P. Allen, M.L. Alles, R.P. Dolan, H.L. Hughes, P. McMarr

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 286 KB

english, 1997

79

Charge trapping in SIMOX and UNIBOND® oxides

O. Gruber, P. Paillet, J.L. Autran, B. Aspar, A.J. Auberton-Hervé

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 293 KB

english, 1997

80

Stacking fault reduction in Silicon-on-Insulator (SOI) islands produced by Selective Epitaxial Growth (SEG) of Silicon using a thermally nitrided SiO2 field insulator

Gerold W. Neudeck, Keith D. Merritt, Jack P. Denton

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 420 KB

english, 1997

81

Detailed characterization of Unibond material

D. Munteanu, C. Maleville, S. Cristoloveanu, H. Moriceau, B. Aspar, C. Raynaud, O. Faynot, J-L. Pelloie, A-J. Auberton-Hervé

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 298 KB

english, 1997

82

Editorial Board

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 65 KB

english, 1997

83

Preface

Olof Engström, Stefan Bengtsson

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 38 KB

english, 1997

84

Author index volume 36

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 477 KB

english, 1997

85

A reliable lifetime prediction in deep submicron N-channel SOI MOSFETs

S.H. Renn, J.L. Pelloie, F. Balestra

Journal:

Microelectronic Engineering

Year:

1997

Language:

english

File:

PDF, 251 KB

english, 1997