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Volume 36; Issue 1-4
Main
Microelectronic Engineering
Volume 36; Issue 1-4
Microelectronic Engineering
Volume 36; Issue 1-4
1
After CMOS: in anticipation of innovative devices on Si
J. Gautier
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 602 KB
Your tags:
english, 1997
2
Reliability and integration of ultra-thin gate dielectrics for advanced CMOS
D.A. Buchanan
,
S.-H. Lo
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 621 KB
Your tags:
english, 1997
3
Relation between trap creation and breakdown during tunnelling current stressing of Sub 3 nm gate oxide
M. Depas
,
M.M. Heyns
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 252 KB
Your tags:
english, 1997
4
Defect instability in ultra-thin oxides on silicon
L. Xie
,
K.R. Farmer
,
D.A. Buchanan
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 317 KB
Your tags:
english, 1997
5
Compositional and mechanistic aspects of ultrathin oxynitride film growth on Si(100)
H.C. Lu
,
E.P. Gusev
,
T. Gustafsson
,
D. Brasen
,
M.L. Green
,
E. Garfunkel
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 272 KB
Your tags:
english, 1997
6
Positron annihilation as a tool for the study of defects in the MOS system
J.M.M. de Nijs
,
M. Clement
,
H. Schut
,
A. van Veen
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 506 KB
Your tags:
english, 1997
7
Evolution of electronically active defects during the formation of SiSiO2 interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements
H. Angermann
,
W. Henrion
,
M. Rebien
,
K. Kliefoth
,
D. Fischer
,
J.-T. Zettler
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 307 KB
Your tags:
english, 1997
8
Charge pumping characterization of transistors with common gate, source and bulk pads
G. Reimbold
,
B. Marchand
,
D. Blachier
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 267 KB
Your tags:
english, 1997
9
Physical and electrical analysis of silicon dioxide thin films produced by electron-cyclotron resonance chemical-vapour deposition
D. Landheer
,
L.-Å. Ragnarsson
,
S. Belkouch
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 685 KB
Your tags:
english, 1997
10
Use of carbon-free Ta2O5 thin-films as a gate insulator
R.A.B. Devine
,
C. Chaneliere
,
J.L. Autran
,
B. Balland
,
P. Paillet
,
J.L. Leray
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 276 KB
Your tags:
english, 1997
11
Electrical reliability of ultra thin remote plasma deposited oxides on silicon
L.-Å. Ragnarsson
,
P. Lundgren
,
A. Jauhiainen
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 215 KB
Your tags:
english, 1997
12
UV-deposited silicon nitride coupled with XeF2 surface cleaning for III-V optoelectronic device passivation
L.S. How Kee Chun
,
J.L. Courant
,
A. Falcou
,
P. Ossart
,
G. Post
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 322 KB
Your tags:
english, 1997
13
Plasma-assisted formation of low defect density silicon carbide-silicon dioxide, SiCSiO2, interfaces
A. Gölz
,
G. Lucovsky
,
K. Koh
,
D. Wolfe
,
H. Niimi
,
H. Kurz
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 349 KB
Your tags:
english, 1997
14
Silicon nanocrystal formation in thin thermal-oxide films by very-low energy Si+ ion implantation
P. Normand
,
D. Tsoukalas
,
E. Kapetanakis
,
J.A. Van Den Berg
,
D.G. Armour
,
J. Stoemenos
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 271 KB
Your tags:
english, 1997
15
Location of individual traps in DRAM cell transistors by charge pumping technique
S. Pierunek
,
J.L. Autran
,
B. Leroy
,
L.M. Gaborieau
,
B. Balland
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 279 KB
Your tags:
english, 1997
16
High Temperature Oxide (HTO) for non volatile memories applications
Ph. Candelier
,
B. Guillaumot
,
F. Mondon
,
G. Reimbold
,
H. Achard
,
F. Martin
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 282 KB
Your tags:
english, 1997
17
Properties of Al2O3-films deposited on silicon by atomic layer epitaxy
Per Ericsson
,
Stefan Bengtsson
,
Jarmo Skarp
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 293 KB
Your tags:
english, 1997
18
Device physics and simulation of Metal/Ferroelectric-Film/p-type silicon capacitors
Hisham Z. Massoud
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 258 KB
Your tags:
english, 1997
19
Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctions
E. Cartier
,
J.C. Tsang
,
M.V. Fischetti
,
D.A. Buchanan
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 264 KB
Your tags:
english, 1997
20
Blue and violet photoluminescence from high-dose Si+- and Ge+-implanted silicon dioxide layers
L. Rebohle
,
I.E. Tyschenko
,
H. Fröb
,
K. Leo
,
R.A. Yankov
,
J. von Borany
,
G.A. Kachurin
,
W. Skorupa
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 320 KB
Your tags:
english, 1997
21
Electrical, optical and luminescent properties of Si3N4 films containing Si nanoclusters
V.G. Baru
,
S. Bayliss
,
A.P. Chernushich
,
M.I. Elinson
,
P. Harris
,
V.A. Jitov
,
V.I. Pokalyakin
,
G.V. Stepanov
,
L.Yu. Zaharov
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 225 KB
Your tags:
english, 1997
22
Characterization of silicon LEDs integrated with oxidized porous silicon SOI
M. Balucani
,
V. Bondarenko
,
A. Dorofeev
,
F. Ermalitski
,
N. Kazuchits
,
G. Maiello
,
L. Masini
,
S. Melnikov
,
S. La Monica
,
S. Volchek
,
A. Ferrari
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 279 KB
Your tags:
english, 1997
23
Electrical properties of end-group functionalised Self-Assembled Monolayers
J. Collet
,
M. Bonnier
,
O. Bouloussa
,
F. Rondelez
,
D. Vuillaume
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 280 KB
Your tags:
english, 1997
24
Enriching of the Si3N4-thermal oxide interface by excess silicon in
V.A. Gritsenko
,
Yu.N. Morokov
,
Yu.N. Novikov
,
I.P. Petrenko
,
S.N. Svitasheva
,
H. Wong
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 100 KB
Your tags:
english, 1997
25
Bohm trajectories for the modeling of tunneling devices
J. Suñé
,
X. Oriols
,
J.J. García-García
,
F. Martín
,
T. González
,
J. Mateos
,
D. Pardo
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 290 KB
Your tags:
english, 1997
26
Impurity gettering effects in separation-by-implanted-oxygen (SIMOX) wafers: what getters what, where and how
R.A. Yankov
,
J.R. Kaschny
,
P.F.P. Fichtner
,
A. Mücklich
,
U. Kreißig
,
W. Skorupa
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 313 KB
Your tags:
english, 1997
27
The planar photomagnetic effect in SOI structure and magnetosensor based on it
V.N. Dobrovolsky
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 167 KB
Your tags:
english, 1997
28
The characterisation of Bonded Silicon on Insulator (BSOI) structures using low temperature scanning cathodoluminescence (CL) and secondary ion mass spectrometry (SIMS)
GM Williams
,
JP Newey
,
V Nayar
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 279 KB
Your tags:
english, 1997
29
A coupled I(V) and charge-pumping analysis of Stress Induced Leakage Currents in 5nm-thick gate oxides
D. Goguenheim
,
A. Bravaix
,
D. Vuillaume
,
F. Mondon
,
Ph. Candelier
,
M. Jourdain
,
A. Meinertzhagen
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 301 KB
Your tags:
english, 1997
30
Stress induced leakage current in ultra-thin gate oxides after constant current stress
A. Scarpa
,
G. Ghibaudo
,
G. Ghidini
,
G. Pananakakis
,
A. Paccagnella
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 216 KB
Your tags:
english, 1997
31
Analysis of near-interfacial SiO2 traps using photon stimulated electron tunneling
V.V. Afanas'ev
,
A. Stesmans
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 305 KB
Your tags:
english, 1997
32
Electrical properties of ultrathin RTCVD oxinitride films in n and p-channel MOSFET's
Y. Maneglia
,
D. Bauza
,
Y. Morfouli
,
G. Ghibaudo
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 223 KB
Your tags:
english, 1997
33
Quasi-breakdown in ultrathin gate dielectrics
A. Halimaoui
,
O. Brière
,
G. Ghibaudo
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 323 KB
Your tags:
english, 1997
34
Oxide thickness dependence of hole trap generation in MOS structures under high-field electron injection
Tomasz Brożek
,
Eric B. Lum
,
Chand R. Viswanathan
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 291 KB
Your tags:
english, 1997
35
SiO2 as an insulator for SiC devices
C.I. Harris
,
V.V. Afanas'ev
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 707 KB
Your tags:
english, 1997
36
Thin oxide growth on 6H-silicon carbide
Vickram R. Vathulya
,
William E. Wagner
,
Floyd C. Miller
,
Marvin H. White
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 249 KB
Your tags:
english, 1997
37
Silicon nitride as dielectric in the low temperature SiGe HBT processing
Q.W. Ren
,
L.K. Nanver
,
C.R. de Boer
,
H.W. van Zeijl
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 315 KB
Your tags:
english, 1997
38
Capacitance measurements on SiC MOS structures for the determination of interface properties
Mahdad Sadeghi
,
Olof Engström
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 284 KB
Your tags:
english, 1997
39
The role of oxygen and nitrogen at the SiO2SiC interface
A. Gölz
,
S. Scharnholz
,
H. Kurz
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 234 KB
Your tags:
english, 1997
40
Thermal annealing behavior of defects induced by ion implantation in thermally grown SiO2 films
Kwang Soo Seol
,
Toshifumi Karasawa
,
Yoshimichi Ohki
,
Hiroyuki Nishikawa
,
Makoto Takiyama
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 190 KB
Your tags:
english, 1997
41
Properties of Eδ′ center in microelectronic grade oxide films
M.E. Zvanut
,
P.J. Macfarlane
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 325 KB
Your tags:
english, 1997
42
Point defect generation in SiO2 by interaction with SiO at elevated temperatures
A. Stesmans
,
V.V. Afanas'ev
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 302 KB
Your tags:
english, 1997
43
Minimization of sub-oxide transition regions at SiSiO2 interfaces by 900°C rapid thermal annealing
G. Lucovsky
,
A. Banerjee
,
B. Hinds
,
B. Claflin
,
K. Koh
,
H. Yang
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 357 KB
Your tags:
english, 1997
44
Nitridation impact on thin oxide charge trapping
M. Alessandri
,
C. Clementi
,
B. Crivelli
,
G. Ghidini
,
F. Pellizzer
,
F. Martin
,
M. Imai
,
H. Ikegawa
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 267 KB
Your tags:
english, 1997
45
Impact of the polysilicon doping level on the properties of the silicon/oxide interface in polysilicon/oxide/silicon capacitor structures
C. Leveugle
,
P.K. Hurley
,
A. Mathewson
,
S. Moran
,
E. Sheehan
,
A. Kalnitsky
,
A. Lepert
,
I. Beinglass
,
M. Venkatesan
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 305 KB
Your tags:
english, 1997
46
Potential fluctuations due to Pb centres at the SiSiO2 interface
MJ Uren
,
KM Brunson
,
JH Stathis
,
E Cartier
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 275 KB
Your tags:
english, 1997
47
Statistical evaluation of random telegraph signal amplitudes in sub-μm MOSFETs
H.H. Mueller
,
M. Schulz
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 271 KB
Your tags:
english, 1997
48
Generation and annealing of hot hole induced interface states
I.S. Al-kofahi
,
J.F. Zhang
,
G. Groeseneken
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 352 KB
Your tags:
english, 1997
49
Basic mechanisms involved in the Smart-Cut® process
B. Aspar
,
M. Bruel
,
H. Moriceau
,
C. Maleville
,
T. Poumeyrol
,
A.M. Papon
,
A. Claverie
,
G. Benassayag
,
A.J. Auberton-Hervé
,
T. Barge
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 604 KB
Your tags:
english, 1997
50
Radiation-induced H+ trapping in buried SiO2
K. Vanheusden
,
J.R. Schwank
,
W.L. Warren
,
D.M. Fleetwood
,
R.A.B. Devine
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 332 KB
Your tags:
english, 1997
51
Electrical investigation of the silicon/diamond interface
B. Edholm
,
J. Olsson
,
N. Keskitalo
,
L. Vestling
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 284 KB
Your tags:
english, 1997
52
Rapid annealing measurements in fully-depleted NMOS/SOI
O. Gruber
,
V. Ferlet-Cavrois
,
Ph. Paillet
,
O. Musseau
,
C. Raynaud
,
J.L. Pelloie
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 273 KB
Your tags:
english, 1997
53
Gate oxide characterization with Ballistic Electron Emission Microscopy
R. Ludeke
,
H.J. Wen
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 697 KB
Your tags:
english, 1997
54
The role of substrate carrier generation in determining the electric field in the oxide of MOS capacitors biased in the Fowler-Norheim tunneling regime
Hisham Z. Massoud
,
James P. Shiely
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 289 KB
Your tags:
english, 1997
55
Impact of oxide charge buildup on Fowler-Nordheim tunneling current characteristics in a MOS structure
R. Kies
,
G. Ghibaudo
,
G. Pananakakis
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 215 KB
Your tags:
english, 1997
56
Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs
C.A. Billman
,
P.M. Lenahan
,
W. Weber
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 241 KB
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english, 1997
57
Hot carrier effects in FLASH
Boaz Eitan
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 464 KB
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english, 1997
58
Effects of hot-carrier degradation in analog CMOS circuits
Roland Thewes
,
Werner Weber
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 671 KB
Your tags:
english, 1997
59
Trade-offs between tunneling and hot-carrier injection in short channel floating gate MOSFETs
Luca Selmi
,
Andrea Ghetti
,
Roberto Bez
,
Enrico Sangiorgi
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 248 KB
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english, 1997
60
Light emission microscopy for thin oxide reliability analysis
Charles Leroux
,
Denis Blachier
,
Olivier Briere
,
Gilles Reimbold
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 300 KB
Your tags:
english, 1997
61
Impact of tunnel-oxide nitridation on endurance and read-disturb characteristics of Flash E2PROM devices
J. De Blauwe
,
D. Wellekens
,
J. Van Houdt
,
R. Degraeve
,
L. Haspeslagh
,
G. Groeseneken
,
H.E. Maes
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 325 KB
Your tags:
english, 1997
62
Influences of the different degradation mechanisms in AC-stressed p-MOSFET's during pass transistor operation
A. Bravaix
,
D. Goguenheim
,
D. Vuillaume
,
N. Revil
,
M. Varrot
,
P. Mortini
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 309 KB
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english, 1997
63
New insights on the charging and discharging of electron traps created by homogeneous electron injection in gate oxide
G. Auriel
,
J.P. Dubuc
,
B. Sagnes
,
J. Oualid
,
D. Vuillaume
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 321 KB
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english, 1997
64
Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETs
B.Y. Kim
,
I.M. Liu
,
H.F. Luan
,
M. Gardner
,
J. Fulford
,
D.L. Kwong
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 257 KB
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english, 1997
65
Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
D.J. DiMaria
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 261 KB
Your tags:
english, 1997
66
Qbd− dependencies of ultrathin gate oxides on large area capacitors
G.M. Paulzen
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 246 KB
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english, 1997
67
Quantitative model of the thickness dependence of breakdown in ultra-thin oxides
J.H. Stathis
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 303 KB
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english, 1997
68
On the relationship between stress induced leakage currents and catastrophic breakdown in ultra-thin SiO2 based dielectrics
D.A. Buchanan
,
J.H. Stathis
,
E. Cartier
,
D.J. DiMaria
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 271 KB
Your tags:
english, 1997
69
Advantages and limitations of silicon-on-insulator technology in radiation environments
J.R. Schwank
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 636 KB
Your tags:
english, 1997
70
Properties of the buried oxide layer in SIMOX structures
A.G. Revesz
,
H.L. Hughes
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 605 KB
Your tags:
english, 1997
71
Contactless measurement of the Si-buried oxide interfacial charges in SOI wafers with surface photovoltage technique
K. Nauka
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 532 KB
Your tags:
english, 1997
72
Submicron SOI-MOSFETs for high temperature operation (300–600K)
G. Reichert
,
C. Raynaud
,
O. Faynot
,
F. Balestra
,
S. Cristoloveanu
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 265 KB
Your tags:
english, 1997
73
Research of high-temperature instability processes in buried dielectric of full depleted SOI MOSFET's
A.N. Nazarov
,
J.-P. Colinge
,
I.P. Barchuk
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 309 KB
Your tags:
english, 1997
74
Diffusion model for high-temperature off-state currents in SOI MOSFETs
T.E. Rudenko
,
V.I. Kilchitskaya
,
A.N. Rudenko
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 281 KB
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english, 1997
75
Determination of the thicknesses of gate oxide and active layer in SOI structures from CV measurements
J. Gibki
,
A. Jakubowski
,
M. Jurczak
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 164 KB
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english, 1997
76
Analytical modeling of the substrate effect on accumulation-mode SOI pMOSFETs at room temperature and at 77 K
Marcelo Antonio Pavanello
,
João Antonio Martino
,
Jean-Pierre Colinge
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 233 KB
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english, 1997
77
Electron energy quantization effects in the very thin film GAA SOI transistor
B. Majkusiak
,
T. Janik
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 278 KB
Your tags:
english, 1997
78
Thin BOX SIMOX silicon-on-insulator substrates for radiation tolerent advanced electronics
L.P. Allen
,
M.L. Alles
,
R.P. Dolan
,
H.L. Hughes
,
P. McMarr
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 286 KB
Your tags:
english, 1997
79
Charge trapping in SIMOX and UNIBOND® oxides
O. Gruber
,
P. Paillet
,
J.L. Autran
,
B. Aspar
,
A.J. Auberton-Hervé
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 293 KB
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english, 1997
80
Stacking fault reduction in Silicon-on-Insulator (SOI) islands produced by Selective Epitaxial Growth (SEG) of Silicon using a thermally nitrided SiO2 field insulator
Gerold W. Neudeck
,
Keith D. Merritt
,
Jack P. Denton
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 420 KB
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english, 1997
81
Detailed characterization of Unibond material
D. Munteanu
,
C. Maleville
,
S. Cristoloveanu
,
H. Moriceau
,
B. Aspar
,
C. Raynaud
,
O. Faynot
,
J-L. Pelloie
,
A-J. Auberton-Hervé
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 298 KB
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english, 1997
82
Editorial Board
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 65 KB
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english, 1997
83
Preface
Olof Engström
,
Stefan Bengtsson
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 38 KB
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english, 1997
84
Author index volume 36
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 477 KB
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english, 1997
85
A reliable lifetime prediction in deep submicron N-channel SOI MOSFETs
S.H. Renn
,
J.L. Pelloie
,
F. Balestra
Journal:
Microelectronic Engineering
Year:
1997
Language:
english
File:
PDF, 251 KB
Your tags:
english, 1997
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