![](/img/cover-not-exists.png)
Impact of the polysilicon doping level on the properties of the silicon/oxide interface in polysilicon/oxide/silicon capacitor structures
C. Leveugle, P.K. Hurley, A. Mathewson, S. Moran, E. Sheehan, A. Kalnitsky, A. Lepert, I. Beinglass, M. VenkatesanVolume:
36
Year:
1997
Language:
english
Pages:
4
DOI:
10.1016/s0167-9317(97)00051-8
File:
PDF, 305 KB
english, 1997