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Numerical simulation of creation-passivation kinetics of interface traps in irradiated n-channel power VDMOSFETs during thermal annealing with various gate biases
Goran S. Ristić, Momčilo M. Pejović, Aleksandar B. JakšićVolume:
40
Year:
1998
Language:
english
Pages:
10
DOI:
10.1016/s0167-9317(97)00193-7
File:
PDF, 164 KB
english, 1998