Comparison of the etching behavior of GaAs and GaN in a...

Microelectronic Engineering 1999 Vol. 46; Iss. 1-4

Comparison of the etching behavior of GaAs and GaN in a chemically-assisted ion-beam etching system

F. Eberhard, M. Schauler, E. Deichsel, C. Kirchner, P. Unger
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Volume:
46
Year:
1999
Language:
english
Pages:
4
DOI:
10.1016/s0167-9317(99)00095-7
File:
PDF, 1.29 MB
english, 1999
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