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MOCVD of InGaAsP, InGaAs and InGaP over InP and GaAs substrates: distribution of composition and growth rate in a horizontal reactor
O Féron, M Sugiyama, W Asawamethapant, N Futakuchi, Y Feurprier, Y Nakano, Y ShimogakiVolume:
159-160
Year:
2000
Language:
english
Pages:
10
DOI:
10.1016/s0169-4332(00)00150-1
File:
PDF, 2.50 MB
english, 2000