Volume 159-160; Issue none

Applied Surface Science

Volume 159-160; Issue none
3

SeS2 assisted bonding of GaAs to Si–A new method for wafer bonding

Year:
2000
Language:
english
File:
PDF, 262 KB
english, 2000
5

Analysis on interface states of ultrathin-SiO2/Si(111)

Year:
2000
Language:
english
File:
PDF, 176 KB
english, 2000
7

Hydrogenation of GaAs-on-Si Schottky diodes by PH3-added H2 plasma

Year:
2000
Language:
english
File:
PDF, 137 KB
english, 2000
13

Evaluation of buried oxide formation in low-dose SIMOX process

Year:
2000
Language:
english
File:
PDF, 432 KB
english, 2000
14

Characterization of low dielectric constant amorphous carbon nitride films

Year:
2000
Language:
english
File:
PDF, 154 KB
english, 2000
20

Characterization of GaS-deposited CVD diamond films by AES and XPS

Year:
2000
Language:
english
File:
PDF, 180 KB
english, 2000
24

Defect causing nonideality in nearly ideal Au/Si Schottky barrier

Year:
2000
Language:
english
File:
PDF, 116 KB
english, 2000
26

Epitaxial growth of Bi2Sr2CuOx films onto Si(001) by molecular beam epitaxy

Year:
2000
Language:
english
File:
PDF, 778 KB
english, 2000
27

Growth temperature effect on the heteroepitaxy of InSb on Si(111)

Year:
2000
Language:
english
File:
PDF, 991 KB
english, 2000
32

Lattice constant of GaN grown on 6H–SiC by MOMBE

Year:
2000
Language:
english
File:
PDF, 724 KB
english, 2000
33

Raman scattering analysis of InGaAs/AlAsSb short-period superlattices

Year:
2000
Language:
english
File:
PDF, 214 KB
english, 2000
34

Improvement of Y2O3/Si interface for FeRAM application

Year:
2000
Language:
english
File:
PDF, 177 KB
english, 2000
38

Effects of ozone treatment of 4H–SiC(0001) surface

Year:
2000
Language:
english
File:
PDF, 131 KB
english, 2000
41

Low-temperature solid-phase-crystallization in Si1−xGex/SiO2

Year:
2000
Language:
english
File:
PDF, 126 KB
english, 2000
49

Molecular beam epitaxy of GaSb with high concentration of Mn

Year:
2000
Language:
english
File:
PDF, 1.84 MB
english, 2000
56

Molecular dynamics analysis of point defects in silicon near solid–liquid interface

Year:
2000
Language:
english
File:
PDF, 213 KB
english, 2000
57

Influence of incorporation of Na on p-type CuInS2 thin films

Year:
2000
Language:
english
File:
PDF, 244 KB
english, 2000
58

Materials design of n-type CuInS2 thin films using Zn or Cd species

Year:
2000
Language:
english
File:
PDF, 119 KB
english, 2000
65

Theory of hydrogen extraction from hydrogenated diamond surfaces

Year:
2000
Language:
english
File:
PDF, 113 KB
english, 2000
69

Ellipsometric analysis of ultrathin oxide layers on SIMOX wafers

Year:
2000
Language:
english
File:
PDF, 180 KB
english, 2000
71

Si(Ge)/oxide-based heterostructures and their applications to optoelectronics

Year:
2000
Language:
english
File:
PDF, 588 KB
english, 2000
72

Theory of surfaces and interfaces of group III-nitrides

Year:
2000
Language:
english
File:
PDF, 866 KB
english, 2000
75

Index

Year:
2000
File:
PDF, 51 KB
2000
76

Index

Year:
2000
Language:
english
File:
PDF, 135 KB
english, 2000
77

Preface

Year:
2000
Language:
english
File:
PDF, 18 KB
english, 2000
86

Ab initio calculations on the dissociative reaction of As4 molecules

Year:
2000
Language:
english
File:
PDF, 356 KB
english, 2000
87

Nanometer-scale characterization of lateral p–n+ junction by scanning capacitance microscope

Year:
2000
Language:
english
File:
PDF, 2.48 MB
english, 2000
88

Lateral growth in molecular beam epitaxy by low angle incidence microchannel epitaxy

Year:
2000
Language:
english
File:
PDF, 1.39 MB
english, 2000
98

Simple fabrication of high density concave nanopyramid array (NPA)on Si surface

Year:
2000
Language:
english
File:
PDF, 857 KB
english, 2000
99

Silicon microphotonics

Year:
2000
Language:
english
File:
PDF, 657 KB
english, 2000
100

First-principles structural determination of Si(001)–C2H2 chemisorbed surface

Year:
2000
Language:
english
File:
PDF, 223 KB
english, 2000
101

Monte-Carlo master equation method for a simulation of epitaxial growth dynamics

Year:
2000
Language:
english
File:
PDF, 509 KB
english, 2000