MOCVD growth of Ga2Se3 on GaAs(100) and GaP(100): a Raman...

Applied Surface Science 1996 Vol. 104-105; Iss. none

MOCVD growth of Ga2Se3 on GaAs(100) and GaP(100): a Raman study

M. von der Emde, D.R.T. Zahn, T. Ng, N. Maung, G.H. Fan, I.B. Poole, J.O. Williams, A.C. Wright
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Volume:
104-105
Year:
1996
Language:
english
Pages:
5
DOI:
10.1016/s0169-4332(96)00205-x
File:
PDF, 314 KB
english, 1996
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