Volume 104-105; Issue none

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Applied Surface Science
Volume 104-105; Issue none

Applied Surface Science

Volume 104-105; Issue none

1

Investigation of the space charge regime of epitaxially grown GaAs (100) by high-resolution electron energy-loss spectroscopy

V.M. Polyakov, A. Elbe, J. Wu, G.J. Lapeyre, J.A. Schaefer

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 613 KB

english, 1996

2

Kinematical RHEED simulation of different structure models for the GaAs (311)A surface

W. Braun, O. Brandt, M. Wassermeier, L. Däweritz, K. Ploog

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 671 KB

english, 1996

3

Ab initio calculations of the reconstructed (100) surfaces of cubic silicon carbide

Peter Käckell, Jürgen Furthmüller, Friedhelm Bechstedt

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 273 KB

english, 1996

4

Chemical preparation of CdTe(100) and (110) surfaces using atomic hydrogen

Y. Luo, D.A. Slater, M. Levy, R.M. Osgood Jr.

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 549 KB

english, 1996

5

Photoexcited carrier diffusion near a Si(111) surface and in the Si bulk

C.M. Li, T. Sjodin, Z.C. Ying, H.L. Dai

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 317 KB

english, 1996

6

Electronic structure of the valence band of GdSx and Gd3S4

V.A. Grazhulis, S.I. Bozhko, I.L. Bolotin, O.R. Bulanov, A.M. Ionov

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 295 KB

english, 1996

7

Sb or Cs covered InAs(110) surfaces: moving EF into conduction band and quantized 2D electron channel

V.Yu. Aristov, M. Grehk, V.M. Zhilin, A. Taleb-Ibrahimi, G. Indlekofer, Z. Hurych, G. Le Lay, P. Soukiassian

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 414 KB

english, 1996

8

Synchrotron radiation study of Cs/carbon-rich β-SiC(100) and Cs/silicon-rich β-SiC(100) surfaces: metallization and interface formation

F. Semond, P. Soukiassian, P.S. Mangat, Z. Hurych, L. di Cioccio, C. Jaussaud

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 671 KB

english, 1996

9

Surface core-level shift photoelectron diffraction from AsSi(111)

L.S.O. Johansson, R. Gunnella, E.L. Bullock, C.R. Natoli, R.I.G. Uhrberg

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 477 KB

english, 1996

10

Si(110)16 × 2 and Si(110)2 × 3-Sb surfaces studied by photoemission and optical spectroscopy

A. Cricenti, P. Perfetti, B. Nesterenko, G. LeLay, C. Sebenne

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 405 KB

english, 1996

11

Ge(111)3 × 1:KSn; on the influence of tin substitution in a metal induced 3 × 1 reconstruction

M. Göthelid, S. Odasso, G. LeLay, M. Björkqvist, E. Janin, U.O. Karlsson, T.M. Grehk

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 301 KB

english, 1996

12

The atomic structure of the Si(111) (23×23)R°-Sn reconstruction

A.H. Levermann, P.B. Howes, K.A. Edwards, H.T. Anyele, C.C. Matthai, J.E. Macdonald, R. Feidenhans'l, L. Lottermoser, L. Seehofer, G. Falkenberg, R.L. Johnson

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 444 KB

english, 1996

13

Atomic phenomena on Si surfaces at adsorption of transition metals

B.Z. Olshanetsky

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 480 KB

english, 1996

14

Hydrogenated and oxidized vicinal Si(001) surfaces investigated by reflectance-difference spectroscopy

U. Rossow, L. Mantese, T. Yasuda, D.E. Aspnes

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 275 KB

english, 1996

15

Se-induced 3d core-level shifts of GaAs(110)

Peter Käckell, Wolf Gero Schmidt, Friedhelm Bechstedt

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 409 KB

english, 1996

16

Optical study of potassium growth on the Si(100) surface

M. Roy, Y. Borensztein

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 288 KB

english, 1996

17

A surface extended X-ray absorption fine structure study of tellurium adsorbed onto Si(100)

S.R. Burgess, B.C.C. Cowie, S.P. Wilks, P.R. Dunstan, C.J. Dunscombe, R.H. Williams

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 454 KB

english, 1996

18

Optical spectroscopy study of hydrogenation of the Si(111)-7 × 7 surface

M. Roy, C. Beitia, Y. Borensztein, A. Shkrebtii, C. Noguez, R. Del Sole

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 338 KB

english, 1996

19

Electronic properties of antimony monolayers on III–V (110) surfaces: a comparative study by reflectance anisotropy spectroscopy and microscopic tight-binding calculations

A.I. Shkrebtii, N. Esser, M. Köpp, P. Haier, W. Richter, R. Del Sole

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 551 KB

english, 1996

20

Schottky-barrier formation at passivated surfaces: covalent and ionic semiconductors

R. Saiz-Pardo, R. Rincón, P.L. de Andrés, F. Flores

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 302 KB

english, 1996

21

Midgap states observed by nonlinear optical spectroscopy of metal:GaAs junctions

J. Qi, W. Angerer, M.S. Yeganeh, A.G. Yodh, W.M. Theis

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 572 KB

english, 1996

22

Spatially resolved internal and external photoemission of Ptn-GaP Schottky barrier

C. Coluzza, J. Almeida, Tiziana dell'Orto, F. Barbo, M. Bertolo, A. Bianco, S. Cerasari, S. Fontana, O. Bergossi, M. Spajer, D. Courjon

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 454 KB

english, 1996

23

Atomistic study of the formation process of Ni silicide on the Si(111)-7×7 surface with scanning tunneling microscopy

Takafumi Yao, Shinji Shinabe, Masamichi Yoshimura

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 316 KB

english, 1996

24

Analytical studies of nickel silicide formation through a thin Ti layer

F. Fenske, A. Schöpke, S. Schulze, B. Selle

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 406 KB

english, 1996

25

Metal-insulator transition for K on GaAs(100)-As rich surfaces

A. Levy Yeyati, A. Martín-Rodero, F. Flores, J. Ortega, R. Rincón

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 284 KB

english, 1996

26

The Schottky barrier of Co on strained and unstrained SixGe1−x alloys

Ja-Hum Ku, R.J. Nemanich

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 374 KB

english, 1996

27

Characterization of cobalt-diamond (100) interfaces: electron affinity and Schottky barrier

P.K. Baumann, R.J. Nemanich

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 463 KB

english, 1996

28

Valence band of Cd1−xFexSeFe in resonant photoemission spectra

B.A. Orlowski, B.J. Kowalski, N. Barrett, D. Martinotti, C. Guillot, J.-P. Lacharme, C.A. Sébenne

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 292 KB

english, 1996

29

Intrinsic surface atom manipulations in STM and AFM

K. Cho, J.D. Joannopoulos

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 333 KB

english, 1996

30

Surface diffusion limitation in laser focused atomic deposition

R.E. Behringer, Vasant Natarajan, G. Timp

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 376 KB

english, 1996

31

A comparative study of the adsorption and thermal decomposition of triethylgallium and trimethylgallium at GaAs(100) surfaces studied by electron energy loss spectroscopy

A.A. Aquino, T.S. Jones

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 593 KB

english, 1996

32

Smoothing of crystal surfaces during growth interruption

A.Yu. Kaminski, R.A. Suris

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 334 KB

english, 1996

33

Comparison of structurally relaxed models of the Si(001)-SiO2 interface based on different crystalline oxide forms

Alfredo Pasquarello, Mark S. Hybertsen, Roberto Car

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 381 KB

english, 1996

34

Initial stage of oxidation of hydrogen-terminated silicon surfaces

Takeo Hattori, Takeshi Aiba, Etsuo Iijima, Yohichi Okube, Hiroshi Nohira, Naoto Tate, Masatake Katayama

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 473 KB

english, 1996

35

Local atomic structure and electrical properties of nitrided SiSiO2 interfaces produced by low-temperature plasma processing and rapid thermal annealing, and explained by ab-initio quantum chemistry calculations

G. Lucovsky, D.R. Lee, S.V. Hattangady, H. Niimi, S. Gandhi, C. Parker, Z. Jing, J.L. Whitten, J.R. Hauser

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 523 KB

english, 1996

36

Density of states and relaxation spectra of etched, H-terminated and naturally oxidized Si-surfaces and the accompanied defects

H. Flietner, W. Füssel, N.D. Sinh, H. Angermann

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 508 KB

english, 1996

37

Synchrotron radiation photoelectron spectroscopy of the O(2s) core level as a tool for monitoring the reducing effects of ion bombardment on SnO2 thin films

P. De Padova, R. Larciprete, C. Ottaviani, C. Quaresima, P. Perfetti, E. Borsella, C. Astaldi, C. Comicioli, C. Crotti, M. Matteucci, M. Zacchigna, K. Prince

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 308 KB

english, 1996

38

Weak fluence dependence of charge generation in ultra-thin oxides on silicon

K.R. Farmer, C.P. Debauche, A.R. Giordano, P. Lundgren, M.O. Andersson, D.A. Buchanan

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 273 KB

english, 1996

39

Studies on low temperature silicon grain growth on SiO2 by electron cyclotron resonance chemical vapor deposition

K.C. Wang, H.L. Hwang, J.J. Loferski, T.R. Yew

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 367 KB

english, 1996

40

Characterization of nitrided SiO2 thin films using secondary ion mass spectrometry

M.R. Frost, C.W. Magee

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 341 KB

english, 1996

41

Plasma assisted oxidation of SiGe layers at 500°C: interface characterization

C. Tételin, X. Wallart, L. Vescan, J.P. Nys

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 534 KB

english, 1996

42

Diffraction spot profile analysis for heteroepitaxial surfaces applied to the initial growth stages of CaF2 adlayers on Si(111)

Joachim Wollschläger, Andreas Meier

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 732 KB

english, 1996

43

Structural transformations at CaF2Si(111) interfaces

N.S. Sokolov, J.C. Alvarez, Yu.V. Shusterman, N.L. Yakovlev, R.M. Overney, Y. Itoh, I. Takahashi, J. Harada

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 540 KB

english, 1996

44

Growth of CdF2CaF2Si(111) heterostructure with abrupt interfaces by using thin CaF2 buffer layer

A. Izumi, K. Kawabata, K. Tsutsui, N.S. Sokolov, S.V. Novikov, A.Yu. Khilko

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 342 KB

english, 1996

45

Interface properties of PNxInP structures by in-situ remote plasma processes

Takashi Sugino, Yoshifumi Sakamoto, Takashi Miyazaki, Junji Shirafuji

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 401 KB

english, 1996

46

GaAs surface passivation using in-situ oxide deposition

M. Passlack, M. Hong, R.L. Opila, J.P. Mannaerts, J.R. Kwo

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 421 KB

english, 1996

47

UV photoemission study of heteroepitaxial AlGaN films grown on 6H-SiC

M.C. Benjamin, M.D. Bremser, T.W. Weeks Jr., S.W. King, R.F. Davis, R.J. Nemanich

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 419 KB

english, 1996

48

Initial stage of growth of GaNGaAs(001) in plasma-assisted molecular beam epitaxy

H. Yang, O. Brandt, A. Trampert, K.H. Ploog

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 746 KB

english, 1996

49

Nitridation of GaAs surfaces stimulated by nitrogen glow discharge

Q.J. Xu, X.M. Ding, X.Y. Hou, Xun Wang

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 257 KB

english, 1996

50

Growth and characterization of ZnSeGaAs single quantum well structures

J.L. House, D.J. Dougherty, G.S. Petrich, L.A. Kolodziejski, E.P. Ippen, G.-C. Hua

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 508 KB

english, 1996

51

Raman monitoring of selenium decapping and subsequent antimony deposition on MBE-grown ZnSe(100)

D. Drews, A. Schneider, D.R.T. Zahn, D. Wolfframm, D.A. Evans

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 342 KB

english, 1996

52

Highly mismatched heteroepitaxy: 2D platelets assisted nucleation of self-assembled 3D quantum dots

C. Priester, M. Lannoo

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 497 KB

english, 1996

53

Photoluminescence and transmission electron microscopy investigation of SiGe quantum wires grown on patterned Si substrates

Arno Hartmann, Christel Dieker, Uschi Bangert, Roger Loo, Lili Vescan, Hans Lüth

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 567 KB

english, 1996

54

AFM and RHEED study of Ge islanding on Si(111) and Si(100)

Peter W. Deelman, Thomas Thundat, Leo J. Schowalter

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 399 KB

english, 1996

55

Characterization of arsenide/phosphide heterostructure interfaces by scanning tunneling microscopy

A.Y. Lew, C.H. Yan, C.W. Tu, E.T. Yu

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 523 KB

english, 1996

56

Atomic force microscopy of III–V nanostructures in air

F. Reinhardt, B. Dwir, G. Biasiol, E. Kapon

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 653 KB

english, 1996

57

Site occupation of Si atoms deposited on vicinal GaAs(001)-(2 × 4) surfaces

A.R. Avery, J.L. Sudijono, T.S. Jones, B.A. Joyce

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 504 KB

english, 1996

58

Porous silicon layers as a model system for nanostructures

U. Rossow, U. Frotscher, C. Pietryga, D.E. Aspnes, W. Richter

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 307 KB

english, 1996

59

Influence of surface reconstruction on MBE growth of layered GaSe on Si(111) substrates

H. Reqqass, J.-P. Lacharme, M. Eddrief, C.A. Sébenne, V. Le Thanh, Y.L. Zheng, J.-F. Pétroff

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 457 KB

english, 1996

60

Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers

M. Mori, D.M. Li, M. Yamazaki, T. Tambo, H. Ueba, C. Tatsuyama

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 505 KB

english, 1996

61

MOCVD growth of Ga2Se3 on GaAs(100) and GaP(100): a Raman study

M. von der Emde, D.R.T. Zahn, T. Ng, N. Maung, G.H. Fan, I.B. Poole, J.O. Williams, A.C. Wright

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 314 KB

english, 1996

62

Temperature dependence of interdiffusion-induced III–V compound formation at the interface between Al, Ga, In layers and Sb substrates

V. Wagner, W. Richter, J. Geurts

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 449 KB

english, 1996

63

STM study of the organic semiconductor PTCDA on highly-oriented pyrolytic graphite

C. Kendrick, A. Kahn, S.R. Forrest

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 590 KB

english, 1996

64

Ultra-thin AlAs films on GaAs (001) investigated by high-resolution electron-energy-loss spectroscopy

J.-L. Guyaux, Ph. Lambin, M.D. Lange, R. Sporken, P.A. Thiry, R. Caudano

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 537 KB

english, 1996

65

Band structure evolution in InAs overlayers on GaAs(110)

Z.Q. He, L. Ilver, J. Kanski, P.O. Nilsson, P. Songsiriritthigul, G. Holmén, U.O. Karlsson

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 511 KB

english, 1996

66

Measurements of the energy band offsets of Si1−xGexSi and Ge1−yCyGe heterojunctions

F. Chen, M.M. Waite, S.Ismat. Shah, B.A. Orner, S.S. Iyer, J. Kolodzey

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 371 KB

english, 1996

67

The conduction barrier at the interface between low temperature grown GaAs and undoped GaAs

K.D. Maranowski, J.P. Ibbetson, K.L. Campman, A.C. Gossard

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 319 KB

english, 1996

68

(II–VI)m(IV2)n (110) superlattice: interfacial chemistry, electronic structure, and optical property

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 299 KB

english, 1996

69

Hot-electron scattering at AuSi(100) Schottky interfaces measured by temperature dependent ballistic electron emission microscopy

C.A. Ventrice Jr., V.P. LaBella, G. Ramaswamy, H.-P. Yu, L.J. Schowalter

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 637 KB

english, 1996

70

Charge transfer and electronic activation at an Sb δ-layer in Si(001)

J.M.C. Thornton, R.J. Cole, D.J. Gravesteijn, P. Weightman

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 430 KB

english, 1996

71

Reconstruction and chemical ordering at the surface of strained (In, Ga) As epilayers

M. Sauvage-Simkin, Y. Garreau, R. Pinchaux, A. Cavanna, M.B. Véron, N. Jedrecy, J.P. Landesman, J. Nagle

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 385 KB

english, 1996

72

Interface abruptness in strained III–V heterostructures

M.R. Bruni, S. Kačiulis, G. Mattogno, G. Righini

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 298 KB

english, 1996

73

Ab-initio electronic structure calculation of the InAs multiple quantum wells in bulk GaAs

Nacir Tit, Maria Peressi

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 396 KB

english, 1996

74

Medium energy ion scattering (MEIS) studies on Si/GaSb/Si- and Si/CaF2/Si(111) layer systems

T. Tappe, A. Chatziparaskewas, J. Schäffer, J. Schlosser, J. Schmalhorst, B. Schmiedeskamp

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 594 KB

english, 1996

75

Preparation and properties of thin polycrystalline MnSi1.73 films

St. Teichert, R. Kilper, J. Erben, D. Franke, B. Gebhard, Th. Franke, P. Häussler, W. Henrion, H. Lange

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 387 KB

english, 1996

76

Clustering on surfaces at finite areal coverages

R. Barel, Y. Mai, G.R. Carlow, M. Zinke-Allmang

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 560 KB

english, 1996

77

Editorial Board

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 41 KB

english, 1996

78

Conference organization

Journal:

Applied Surface Science

Year:

1996

File:

PDF, 25 KB

1996

79

Sponsors

Journal:

Applied Surface Science

Year:

1996

File:

PDF, 13 KB

1996

80

Author index

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 672 KB

english, 1996

81

Subject index

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 1.45 MB

english, 1996

82

Preface

A. Kahn, R. Ludeke

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 72 KB

english, 1996

83

Ab initio calculations of structural and electronic properties of prototype surfaces of group IV, III–V and II–VI semiconductors

J. Pollmann, P. Krüger, M. Rohlfing, M. Sabisch, D. Vogel

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 1.26 MB

english, 1996

84

Plasmon excitations and the effects of surface preparation in n-type InAs(001) studied by electron energy loss spectroscopy

G.R. Bell, C.F. McConville, T.S. Jones

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 505 KB

english, 1996

85

In-situ monitoring of surface chemistry and charge transfer at semiconductor surfaces

E. Fefer, L. Kronik, M. Leibovitch, Yoram Shapira, W. Riedl

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 471 KB

english, 1996

86

An ARUPS/NEXAFS study of the H2SInP(110) adsorbate system

E. Dudzik, A. Leslie, E. O'Toole, I.T. McGovern, A. Patchett, D.R.T. Zahn

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 340 KB

english, 1996

87

Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state density

H. Angermann, K. Kliefoth, H. Flietner

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 402 KB

english, 1996

88

Dissolution and segregation of monolayer Cu, Ni and Co atoms on the Si(111)-3×3-Ag surface induced by thermal annealing

J. Yuhara, R. Ishigami, D. Ishikawa, K. Morita

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 408 KB

english, 1996

89

Segregation of In atoms at clean and hydrogen passivated InP(100) surfaces

F. Stietz, Th. Allinger, V. Polyakov, J. Woll, A. Goldmann, W. Erfurth, G.J. Lapeyre, J.A. Schaefer

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 473 KB

english, 1996

90

Structural properties of epitaxial silicide layers on Si

H. von Känel, E. Müller, S. Goncalves-Conto, C. Schwarz, N. Onda

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 685 KB

english, 1996

91

Scanning tunneling spectroscopy examination of surface electronic structures of Si(111)(23×23)30°-Sn surface

X.F. Lin, I. Chizhov, H.A. Mai, R.F. Willis

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 358 KB

english, 1996

92

Unpinned behavior of the Fermi level and photovoltage on p-(100) GaAs surface facilitated by deposition of cesium

V.L. Alperovich, A.G. Paulish, H.E. Scheibler, V.I. Tynnyi, A.S. Terekhov

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 418 KB

english, 1996

93

Development of the NaGaAs(111)A-(2 × 2) interface at room and low temperature

J.M.C. Thornton, P. Weightman, P. Bailey, D.A. Woolf, A.D. Laine, D.A. Evans

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 499 KB

english, 1996

94

Metal overlayers on the MBE-grown ZnSe(001) surface

D.A. Evans, D. Wolfframm, D. Gnoth, J. Cairns, A.C. Wright, M. Evans, J. Riley, D. Westwood, D.A. Woolf

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 622 KB

english, 1996

95

Quantitative analysis of degradation in Schottky diode characteristics induced by single ion implantation

M. Koyama, Y. Akita, C. Cheong, M. Koh, T. Matsukawa, K. Horita, B. Shigeta, I. Ohdomari

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 285 KB

english, 1996

96

A normal incidence X-ray standing wave study of sulphur adsorption on InP(110)

T.K. Johal, P. Finetti, V.R. Dhanak, A.W. Robinson, A. Patchett, D.R.T. Zhan, R. McGrath

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 374 KB

english, 1996

97

Graphitization of diamond (111) studied by first principles molecular dynamics

Alessandro De Vita, Giulia Galli, Andrew Canning, Roberto Car

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 572 KB

english, 1996

98

The initial oxidation of silicon: new ion scattering results in the ultra-thin regime

E.P. Gusev, H.C. Lu, T. Gustafsson, E. Garfunkel

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 415 KB

english, 1996

99

Influences of hydrogen on initial oxidation processes of H-terminated Si(100) surfaces

H. Ikeda, K. Hotta, S. Furuta, S. Zaima, Y. Yasuda

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 349 KB

english, 1996

100

Effect of chemical preoxidation treatment on the structure of SiO2Si interfaces

Hiroshi Nohira, Hiroaki Sekikawa, Masanori Matsuda, Takeo Hattori

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 371 KB

english, 1996

101

Radiation immunity of pMOSFETs and nMOSFETs examined by means of MeV He single ion microprobe

M. Koh, K. Horita, B. Shigeta, T. Matsukawa, A. Kishida, T. Tanii, S. Mori, I. Ohdomari

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 333 KB

english, 1996

102

Molecular beam epitaxial growth of thin CaF2 films on vicinal Si(111) surfaces

B.M. Kim, C.A. Ventrice Jr., T. Mercer, R. Overney, L.J. Schowalter

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 579 KB

english, 1996

103

Hydrogen ion treatments of oxidized GaAs(100) and AlGaAs(100) surfaces: surface stoichiometry and electronic properties

Ying-Lan Chang, Sang I. Yi, Song Shi, Evelyn Hu, W.H. Weinberg, James Merz

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 399 KB

english, 1996

104

Sulfur passivated InP(100): surface gaps and electron counting

C.E.J. Mitchell, I.G. Hill, A.B. McLean, Z.H. Lu

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 534 KB

english, 1996

105

Influence of physisorbed arsenic on RHEED intensity oscillations during low-temperature GaAs molecular beam epitaxy

R. Venkatasubramanian, Vamsee K. Pamula, Donald L. Dorsey

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 490 KB

english, 1996

106

Photomodulation Raman scattering spectroscopy of ZnSeGaAs heterostructure interface

H. Talaat, L. Elissa, S. Negm, E. Burstein

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 383 KB

english, 1996

107

Heterocrystalline SiC: ab initio calculations for the interface structure of combinations of cubic and hexagonal SiC

P. Käckell, F. Bechstedt

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 333 KB

english, 1996

108

Surface and subsurface imaging of indium in InGaAs by scanning tunneling microscopy

M. Pfister, M.B. Johnson, S.F. Alvarado, H.W.M. Salemink, U. Marti, D. Martin, F. Morier-Genoud, F.K. Reinhart

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 456 KB

english, 1996

109

Characterization of nanostructures by virtue of the phenomena due to the electron-phonon interaction

E.P. Pokatilov, V.M. Fomin, S.N. Klimin, S.N. Balaban

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 432 KB

english, 1996

110

GaSe films grown on a GaAs(001) surface at high temperature using a thermal evaporation of GaSe

T. Izumi, H. Nishiwaki, T. Tambo, C. Tatsuyama

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 371 KB

english, 1996

111

Low-energy yield spectroscopy determination of band offsets: application to the epitaxial GeSi(100) heterostructure

L. Di Gaspare, G. Capellini, C. Chudoba, M. Sebastiani, F. Evangelisti

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 446 KB

english, 1996

112

A scanning tunnelling microscopy study of local surface modifications induced by misfit dislocation formation in strained-layer heteroepitaxy

G. Springholz, G. Bauer

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 722 KB

english, 1996

113

A summary and perspective on the Fifth International Conference on the Formation of Semiconductor Interfaces, Princeton, NJ

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 377 KB

english, 1996

114

Fluorine adsorption on GaAs(110) surfaces and the onset of etching after XeF2 exposures

H. Nienhaus, W. Mönch

Journal:

Applied Surface Science

Year:

1996

Language:

english

File:

PDF, 410 KB

english, 1996

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