Comparison between process-induced defects in n-GaAs exposed to hydrogen and argon plasmas
Tatsuyuki Shinagawa, Tsugunori OkumuraVolume:
117-118
Year:
1997
Language:
english
Pages:
5
DOI:
10.1016/s0169-4332(97)80151-1
File:
PDF, 388 KB
english, 1997