Volume 117-118; Issue none

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Applied Surface Science
Volume 117-118; Issue none

Applied Surface Science

Volume 117-118; Issue none

1

Editorial board

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 56 KB

english, 1997

2

The impact of device scaling limits

Lewis M. Terman

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 857 KB

english, 1997

3

Some issues yet to be solved for the age of 0.1 μm technologies

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 741 KB

english, 1997

4

Comb-shape step formation on Si(001)-2 × 1 surface

Tadahiro Komeda, Yasushiro Nishioka

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 505 KB

english, 1997

5

Infrared and Raman study of H-terminated Si(100) surfaces produced by etching solutions

N. Miyata, S. Watanabe, S. Okamura

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 515 KB

english, 1997

6

Implication of hydrogen-induced boron passivation in wet-chemically cleaned Si(111):H

S. Miyazaki, J. Schäfer, J. Ristein, L. Ley

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 437 KB

english, 1997

7

Raman spectroscopic study on hydrogen molecules in crystalline silicon treated with atomic hydrogen

K. Ishioka, K.G. Nakamura, M. Kitajima, N. Fukata, S. Sasaki, K. Murakami, S. Fujimura, J. Kikuchi, H. Haneda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 391 KB

english, 1997

8

Pulsed molecular beam reactive scattering of O2 on semiconductor surfaces studied with resonance enhanced multiphoton ionization

K.G. Nakamura, I. Kamioka, M. Kitajima

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 390 KB

english, 1997

9

Quantum chemical study on p-doping effect of silicon surface reaction with silane

Akitomo Tachibana, Tasuku Yano

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 437 KB

english, 1997

10

Quantum chemical study on p-doping effect of F-terminated silicon surface reaction with silane

Akitomo Tachibana, Ken Sakata

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 543 KB

english, 1997

11

Quantum chemical study of silicon oxide surface reaction with (poly)silane

Akitomo Tachibana, Tasuku Yano

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 370 KB

english, 1997

12

Mechanism of H2 desorption from H-terminated Si(001) surfaces

T. Watanabe, T. Hoshino, I. Ohdomari

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 465 KB

english, 1997

13

Experiments with extrinsic Si(111) surfaces: Cs adsorption at room temperature on Si(111) terminated with hydrogen and oxygen

P. Morgen, P.-E. Hansen, K. Pedersen

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 410 KB

english, 1997

14

In situ monitoring of gas source molecular beam epitaxy of silicon with disilane by ultraviolet photoelectron spectroscopy

H. Sakamoto, Y. Takakuwa, Y. Enta, T. Horie, T. Hori, T. Yamaguchi, N. Miyamoto, H. Kato

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 446 KB

english, 1997

15

Chemisorption of Ba on deuterium-terminated Si(100) surface

Kaoru Ojima, Shozo Hongo, Zhuo-xiong Shao, Toshio Urano

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 515 KB

english, 1997

16

Surface adsorbate related nucleation of crystallographic defect in chemical vapor deposition of silicon with dichlorosilane

Yuji Takakuwa, Motaharul Kabir Mazumder, Nobuo Miyamoto

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 494 KB

english, 1997

17

Adsorption and desorption properties of Cu and Ag contaminants on Si substrate

Hiroshi Morita, Jong-Soo Kim, Tadahiro Ohmi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 289 KB

english, 1997

18

Relationship between carbon adsorption and native oxide on Si (100) surface

N. Matsuo, T. Miyoshi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 519 KB

english, 1997

19

Initial oxidation of H-terminated Si(111) surfaces studied by HREELS

H. Ikeda, Y. Nakagawa, M. Toshima, S. Furuta, S. Zaima, Y. Yasuda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 385 KB

english, 1997

20

Initial oxidation of Si(100)-(2 × 1)H monohydride surfaces studied by scanning tunneling microscopy/scanning tunneling spectroscopy

Kenji Ohmori, Hiroya Ikeda, Hirotaka Iwano, Shigeaki Zaima, Yukio Yasuda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 403 KB

english, 1997

21

SiO2 valence band near the SiO2/Si(111) interface

Hiroshi Nohira, Takeo Hattori

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 348 KB

english, 1997

22

Initial stage of ultra-thin SiO2 formation at low temperatures using activated oxygen

Takashi Fuyuki, Seishi Muranaka, Hiroyuki Matsunami

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 327 KB

english, 1997

23

Lateral size of atomically flat oxidized region on Si(111) surface

Akio Omura, Hiroaki Sekikawa, Takeo Hattori

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 361 KB

english, 1997

24

Nitridation and subsequent oxidation process of Si(111) and (100) surfaces for high-density Si pillar formation

M. Tabe, T. Yamamoto, Y. Terao

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 413 KB

english, 1997

25

Growth kinetics of ultra-thin N2O oxynitrides for gate insulator

Mieko Matsumura, Yasushiro Nishioka

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 424 KB

english, 1997

26

Thermal oxidation of outdiffusing SiO with permeating O2 in a SiO2 film studied by angle-resolved X-ray photoelectron spectroscopy

Yuji Takakuwa, Mizuhisa Nihei, Nobuo Miyamoto

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 509 KB

english, 1997

27

New model of nucleation and growth in a thin layer between two interfaces

Takashi Tagami, Shun-ichiro Tanaka

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 330 KB

english, 1997

28

Quantum chemical study on low energy reaction path for SiH4 + O(1D) → SiO + 2H2

Akitomo Tachibana, Ken Sakata

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 512 KB

english, 1997

29

Quantum chemical study of reaction path for NH (a1Δ) with SiH4

Akitomo Tachibana, Tasuku Yano

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 542 KB

english, 1997

30

Characterization of SiO2/Si with a novel scanning capacitance microscope combined with an atomic force microscope

Hideto Tomiye, Hiroshi Kawami, Takafumi Yao

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 463 KB

english, 1997

31

Quantitative characterization of Si/SiO2 interface traps induced by energetic ions by means of single ion microprobe and single ion beam induced charge imaging

M. Koh, K. Igarashi, T. Sugimoto, T. Matsukawa, S. Mori, T. Arimura, I. Ohdomari

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 406 KB

english, 1997

32

Effects of interface roughness on the density of interface states at ultrathin oxide/Si interfaces: XPS measurements under biases

Y. Yamashita, Y. Nakato, H. Kato, Y. Nishioka, H. Kobayashi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 419 KB

english, 1997

33

Exact evaluation of channel mobility for trench MOSFET using split C–V method

A. Yahata, T. Inoue, H. Ohashi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 432 KB

english, 1997

34

AFM observation of Si/SiO2 interface subjected to electric stress

Masao Inoue, Akihiro Shimada, Junji Shirafuji

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 349 KB

english, 1997

35

Hydrogen atom participation in metastable defect formation at SiSiO2 interfaces

G. Lucovsky, H. Yang, Z. Jing, J.L. Whitten

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 495 KB

english, 1997

36

FTIR-ATR, AFM, and UHV-STM characterization of the interface of SiO2/Si(001) induced by thick SiO2 formation

Kenji Namba, Tadahiro Komeda, Yasushiro Nishioka

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 333 KB

english, 1997

37

Elimination of sub-oxide transition regions at SiSiO2 interfaces by rapid thermal annealing at 900°C

G. Lucovsky, A. Banerjee, H. Niimi, K. Koh, B. Hinds, C. Meyer, G. Lüpke, H. Kurz

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 443 KB

english, 1997

38

A medium energy ion scattering analysis of the SiSiO2 interface formed by ion beam oxidation of silicon

Young Pil Kim, Si Kying Choi, Yong Ho Ha, Sehun Kim, Hyun Kyong Kim, Dae Won Moon

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 435 KB

english, 1997

39

Dependence of TO and LO mode frequency of thermally grown silicon dioxide films on annealing temperature

K. Ishikawa, Y. Uchiyama, H. Ogawa, S. Fujimura

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 322 KB

english, 1997

40

Spectral shape analysis of infrared absorption of thermally grown silicon dioxide films

Naoki Yasuda, Shin-ichi Takagi, Akira Toriumi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 465 KB

english, 1997

41

Structural relaxation of SiO2/Si interfacial layer during annealing

Naoki Awaji, Satoshi Ohkubo, Toshiro Nakanishi, Kanetake Takasaki, Satoshi Komiya

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 347 KB

english, 1997

42

Infrared analysis of SiO2 films grown on the 6H-SiC surfaces

Hidekazu Tsuchida, Isaho Kamata, Kunikazu Izumi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 459 KB

english, 1997

43

Electrical reliability and structural inhomogeneity of thermally grown SiO2

A. Toriumi, H. Satake, N. Yasuda, T. Tanamoto

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 575 KB

english, 1997

44

Ultra thin gate oxide reliability enhanced by carbon contamination free process

Toshiyuki Iwamoto, Tadahiro Ohmi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 309 KB

english, 1997

45

Effects of post-oxidation annealing on 3nm-thick low-temperature-grown gate oxide

Tomoyuki Sakoda, Mieko Matsumura, Yasushiro Nishioka

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 302 KB

english, 1997

46

Dielectric breakdown caused by hole-induced-defect in thin SiO2 films

Akinobu Teramoto, Kiyoteru Kobayashi, Yasuji Matsui, Makoto Hirayama

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 319 KB

english, 1997

47

SiSiO2 interface state recovery from plasma damage by rotating wafers under a flow of deionized water

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 255 KB

english, 1997

48

FLASH memory data retention reliability and the floating gate/tunnel SiO2 interface characteristics

Taishi Kubota, Kohichi Ando, Satoru Muramatsu

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 473 KB

english, 1997

49

Gate dielectric properties of silicon nitride films formed by jet vapor deposition

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 735 KB

english, 1997

50

Ultrathin silicide formation for ULSI devices

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 631 KB

english, 1997

51

Thermal stability of ultra-thin CoSi2 films on Si(100)-2 × 1 surfaces

H. Ikegami, H. Ikeda, S. Zaima, Y. Yasuda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 403 KB

english, 1997

52

Formation of buried epitaxial CoSi2 layer through diffusion mediated reaction

K. Prabhakaran, K. Sumitomo, T. Ogino

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 465 KB

english, 1997

53

Strain distribution around a NiSi2/Si interface measured by convergent beam electron diffraction

Yutaka Wakayama, Shun-ichiro Tanaka

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 436 KB

english, 1997

54

Effects of electric field on silicide formation

Hiroko Murakami, Kazunori Ono, Hiroshi Takai

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 376 KB

english, 1997

55

Epitaxial iron silicides: geometry, electronic structure and applications

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 803 KB

english, 1997

56

Reactive deposition epitaxial growth of β-FeSi2 layers on Si(001)

M. Tanaka, Y. Kumagai, T. Suemasu, F. Hasegawa

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 415 KB

english, 1997

57

Dependence of diffusion barrier properties in microstructure of reactively sputtered TiN films in Al alloy/TiN/Ti/Si system

S. Sobue, T. Yamauchi, H. Suzuki, S. Mukainakano, O. Takenaka, T. Hattori

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 262 KB

english, 1997

58

Formation mechanism of ultrathin WSiN barrier layer in a W/WNx/Si system

K. Nakajima, Y. Akasaka, K. Miyano, M. Takahashi, S. Suehiro, K. Suguro

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 391 KB

english, 1997

59

Interfacial reactions and electrical characteristics in Ti/SiGe/Si(100) contact systems

J. Kojima, S. Zaima, H. Shinoda, H. Iwano, H. Ikeda, Y. Yasuda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 372 KB

english, 1997

60

Electron emission microscopy on Au/Si and silicide/Si Schottky barriers

C. Manke, Y. Bodschwinna, M. Schulz

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 776 KB

english, 1997

61

Schottky barrier inhomogeneity at Au/Si(111) interfaces investigated using ultrahigh-vacuum ballistic electron emission microscopy

Touru Sumiya, Tadao Miura, Haruko Fujinuma, Shun-ichiro Tanaka

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 441 KB

english, 1997

62

The control and modification of semiconductor interfaces using thin multi-quantum barrier/well (MQB/W) reflectors

S.P. Wilks, A. Kestle

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 694 KB

english, 1997

63

Controlled formation of metal-semiconductor interface to 2DEG layer by in-situ electrochemical process and its application to in-plane gated electron waveguide devices

Takashi Kudoh, Hiroshi Okada, Tamotsu Hashizume, Hideki Hasegawa

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 381 KB

english, 1997

64

InxGa1 − xAs-based Ohmic contacts to n-type GaAs with W-nitride barrier prepared by radio frequency sputtering

C.J. Uchibori, Y. Ohtani, T. Oku, N. Ono, M. Murakami

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 441 KB

english, 1997

65

Interface property of Mg-based dual ion implanted p+-ohmic layers in p-channel pseudomorphic AlGaAs/InGaAs heterostructure FETs

Naoki Hara, Haruyoshi Suehiro, Shigeru Kuroda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 433 KB

english, 1997

66

Roles of top and first Ni-layers in the improvement of electrical property and surface morphology in Ni/Al/Ni/n-InP contacts

S. Miyazaki, M. Saruta, T. Okumura

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 546 KB

english, 1997

67

Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors

P.H. Holloway, T.-J. Kim, J.T. Trexler, S. Miller, J.J. Fijol, W.V. Lampert, T.W. Haas

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 1.06 MB

english, 1997

68

Dependence of electrical properties on work functions of metals contacting to p-type GaN

Yasuo Koide, H. Ishikawa, S. Kobayashi, S. Yamasaki, S. Nagai, J. Umezaki, M. Koike, Masanori Murakami

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 626 KB

english, 1997

69

Elementary calculation of the branch-point energy in the continuum of interface-induced gap states

Winfried Mönch

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 766 KB

english, 1997

70

Barrier heights of GaN Schottky contacts

Thorsten U. Kampen, Winfried Mönch

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 524 KB

english, 1997

71

Control of Schottky and ohmic interfaces by unpinning Fermi level

S. Hara, T. Teraji, H. Okushi, K. Kajimura

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 570 KB

english, 1997

72

The properties of Schottky junctions on Nb-doped SrTiO3 (001)

Takashi Shimizu, Naoki Gotoh, Naoya Shinozaki, Hideyo Okushi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 606 KB

english, 1997

73

Dielectric property of ferroelectric-insulator-semiconductor junction

Masanori Okuyama, Wenbiao Wu, Yoshihiro Oishi, Takeshi Kanashima

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 621 KB

english, 1997

74

Functionality of the ferroelectric/oxide semiconductor interface

Joe T. Evans Jr., Robert I. Suizu, Leonard L. Boyer

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 454 KB

english, 1997

75

Electrical properties of ferroelectric BaMgF4 films grown on GaAs substrates using AlGaAs buffer layer

Tomoki Hayashi, Makoto Yoshihara, Syun-ichiro Ohmi, Eisuke Tokumitsu, Hiroshi Ishiwara

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 433 KB

english, 1997

76

Hysteresis characteristics of vacuum-evaporated ferroelectric PbZr0.4Ti0.6O3 films on Si(111) substrates using CeO2 buffer layers

Byung-Eun Park, Ikuo Sakai, Eisuke Tokumitsu, Hiroshi Ishiwara

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 434 KB

english, 1997

77

Interface control of Pb(ZrxTi1 − x)O3 thin film on silicon substrate with heteroepitaxial YSZ buffer layer

Susumu Horita, Tetsuya Naruse, Mikio Watanabe, Atsushi Masuda, Tsuyoshi Kawada, Yukinari Abe

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 437 KB

english, 1997

78

Soft X-ray emission spectroscopy study of CaF2(film)/Si(111): non-destructive buried interface analysis

M. Iwami, M. Kusaka, M. Hirai, R. Tagami, H. Nakamura, H. Watabe

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 352 KB

english, 1997

79

ZnSe ionicity control layer inserted in GaAs/CaF2(111) interface

Mohammad Mustafa Sarinanto, Yoji Yamaguchi, Kazuo Tsutsui

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 428 KB

english, 1997

80

Low-temperature epitaxial growth of CaF2 on (NH4)2Sx-treated GaAs(100) surface

Daisei Shoji, Michio Niwano, Nobuo Miyamoto

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 310 KB

english, 1997

81

Preparation of PbZrxTi1 − xO3/La1 − xSrxCoO3 heterostructures using the sol-gel method and their electrical properties

Sung-Min Yoon, Eisuke Tokumitsu, Hiroshi Ishiwara

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 529 KB

english, 1997

82

High-energy ion beam analysis of ferroelectric thin films

Michio Watamori, Shin-ichi Honda, Osamu Kubo, Isaku Kanno, Takashi Hirao, Kaoru Sasabe, Kenjiro Oura

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 469 KB

english, 1997

83

Effects of Ga adatom migration on formation of lateral p-n tunneling junctions on GaAs(N11)A patterned substrates

Hajime Ohnishi, Kazuhisa Fujita, Toshihide Watanabe

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 520 KB

english, 1997

84

Quantum chemical study on aluminum selective CVD reaction mechanism

Akitomo Tachibana, Ken Sakata, Kiyoyuki Omoto

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 525 KB

english, 1997

85

Surface structure of Zn- or Se-treated GaAs(001) and its influence for ZnSe heteroepitaxy

S. Miwa, K. Kimura, L.H. Kuo, T. Yasuda, T. Yao

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 435 KB

english, 1997

86

Formation and control of MBE-ZnSe/GaAs heterointerface and regrown homointerface

T. Sawada, K. Fujiwara, Y. Yamagata, K. Imai, K. Suzuki, N. Kimura

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 615 KB

english, 1997

87

Self-aligning phenomena of ZnCdSe islands grown by molecular beam epitaxy on GaAs(110) surface cleaved in ultra high vacuum

Hyun-Chul Ko, Doo-Cheol Park, Yoichi Kawakami, Shizuo Fujita, Shigeo Fujita

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 371 KB

english, 1997

88

Characterization of ZnSe homo-interface grown by MBE

F. Nakanishi, H. Doi, T. Yamada, T. Matsuoka, S. Nishine, K. Matsumoto, T. Shirakawa

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 521 KB

english, 1997

89

Dependence of defect generation and structure on interface chemistry in ZnSe/GaAs

L.H. Kuo, K. Kimura, S. Miwa, T. Yasuda, A. Ohtake, T. Yao

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 722 KB

english, 1997

90

Effect of plasma oxidized Al prelayer for the epitaxial growth of Al2O3 films on Si using magnetron sputtering

Kiyoteru Hayama, Hidenori Ohyama, Tomoyuki Okuhara, Makoto Ishida

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 326 KB

english, 1997

91

The effect of buffer layers on structural quality of Si0.7Ge0.3 layers grown on Si(001) substrates by molecular beam epitaxy

T. Obata, K. Komeda, T. Nakao, H. Ueba, C. Tatsuyama

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 533 KB

english, 1997

92

Growth of InSb films on a Si(001) substrate with Ge buffer layer

M. Mori, Y. Tsubosaki, T. Tambo, H. Ueba, C. Tatsuyama

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 457 KB

english, 1997

93

Epitaxial growth and characterization of GaSxSe1−x layered compound semiconductor by molecular beam epitaxy

Maman Budiman, Tamotsu Okamoto, Akira Yamada, Makoto Konagai

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 395 KB

english, 1997

94

Substrate orientation dependence of the growth of GaSe thin films on GaAs

C. Tatsuyama, H. Nishiwaki, K. Asai, K.K. Lim, T. Tambo, H. Ueba

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 549 KB

english, 1997

95

Heteroepitaxy of GaN and related materials with a novel two-flow MOVPE horizontal reactor

K. Nishida, K. Uchida, M. Kondo, H. Kukimoto, H. Munekata

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 462 KB

english, 1997

96

Formation of zinc blende GaN using the conversion technique

T. Sukegawa, H. Katsuno, S. Kawaguchi, M. Kimura, A. Tanaka

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 344 KB

english, 1997

97

AlN epitaxial growth on atomically flat initially nitrided α-Al2O3 wafer

Takumi Suetsugu, Tsuyoshi Yamazaki, Shuichi Tomabechi, Kazuhiko Wada, Kazuya Masu, Kazuo Tsubouchi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 570 KB

english, 1997

98

A study of the nitridation process on GaAs (001) surface by rf-N plasma irradiation

Hiroki Sugiyama, Masanori Shinohara, Kazumi Wada

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 437 KB

english, 1997

99

Study of defects generated from a nitridation of GaAs surface

Young Ju Park, Eun Kyu Kim, Il Ki Han, Suk-Ki Min, Patrick O'Keeffe, Harunobu Mutoh, Hiroo Munekata, Hiroshi Kukimoto

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 580 KB

english, 1997

100

Ion-implantation in diamond and diamond films: doping, damage effects and their applications

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 1.10 MB

english, 1997

101

Thin film CaF2 stabilizing effect on single-crystal diamond surface

Young Yun, Tetsuro Maki, Takeshi Kobayashi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 383 KB

english, 1997

102

ESR characterization of defects produced in diamond surface by B ion implantation

Y. Show, F. Matsuoka, T. Izumi, M. Deguchi, M. Kitabatake, H. Sakakima, T. Hirao, Y. Mori, A. Hatta, T. Ito, A. Hiraki

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 350 KB

english, 1997

103

Cathodoluminescence measurement of CVD diamond surface

Hideki Kawamura, Yasuhito Kurokawa, Tetsuro Maki, Takeshi Kobayashi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 354 KB

english, 1997

104

Surface observation of β-SiC substrate after negative bias treatment in diamond deposition

Tadaaki Yamamoto, Tetsuro Maki, Takeshi Kobayashi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 384 KB

english, 1997

105

Interface characterization of chemical-vapour-deposited diamond on Cu and Pt substrates studied by transmission electron microscopy

N. Jiang, C.L. Wang, J.H. Won, M.H. Joen, Y. Mori, A. Hatta, T. Ito, T. Sasaki, A. Hiraki

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 424 KB

english, 1997

106

Electron emitter device of NEA diamond thin film

Akimitsu Hatta, Kenji Ogawa, Nobuhiro Eimori, Masahiro Deguchi, Makoto Kitabatake, Toshimichi Ito, Akio Hiraki

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 411 KB

english, 1997

107

Characterization of damage in electron cyclotron resonance plasma etched compound semiconductors

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 689 KB

english, 1997

108

Photo-induced effects on point defect behavior in plasma-irradiated GaAs

H. Nakanishi, K. Wada

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 303 KB

english, 1997

109

Comparison between process-induced defects in n-GaAs exposed to hydrogen and argon plasmas

Tatsuyuki Shinagawa, Tsugunori Okumura

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 388 KB

english, 1997

110

Electroreflectance investigation of trapping states at SiO2/GaAs interfaces

Yasunori Mochizuki, Masashi Mizuta

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 457 KB

english, 1997

111

Relaxation of band bending on GaAs(001) surface by controlling the crystal defects near the surface

Y. Hirota, Y. Watanabe, F. Maeda, T. Ogino

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 483 KB

english, 1997

112

Effects of stress on generation of P-line defects near insulator-silicon interface

Yoshihiro Uozumi, Takashi Katoda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 408 KB

english, 1997

113

Investigation of sputtered indium-tin oxide/silicon interfaces: ion damage, hydrogen passivation and low-temperature anneal

K. Kuwano, S. Ashok

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 375 KB

english, 1997

114

Properties of silicon doped silicon dioxide thin films deposited by Co-sputtering of silicon and silicon dioxide

A. Sandhu, Y. Show, T. Katano, M. Iwase, T. Izumi, T. Yabe, S. Nozaki, H. Morisaki

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 281 KB

english, 1997

115

Characterization of neutral and charged defects in a-Si3N4:H/a-Si:H multilayers

Hoonkee Min, Minoru Kumeda, Tatsuo Shimizu

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 336 KB

english, 1997

116

Step arrangement design and nanostructure self-organization on Si surfaces

Toshio Ogino, Hiroki Hibino, Yoshikazu Homma

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 763 KB

english, 1997

117

Si nanofabrication using AFM field enhanced oxidation and anisotropic wet chemical etching

K. Morimoto, K. Araki, K. Yamashita, K. Morita, M. Niwa

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 671 KB

english, 1997

118

Low coverage gallium deposition onto Si(001) studied by voltage-dependent STM and total energy calculations

Holger Nörenberg, Chris.M. Goringe

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 437 KB

english, 1997

119

Formation of InAs islands on InP (001) by droplet hetero-epitaxy

Y. Nonogaki, T. Iguchi, Y. Fujiwara, Y. Takeda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 438 KB

english, 1997

120

Optical absorption evidence of quantum confinement in Si/CaF2 multilayers grown by molecular beam epitaxy

F. Bassani, I. Mihalcescu, J.C. Vial, F. Arnaud d'Avitaya

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 585 KB

english, 1997

121

Development of single-ion implantation — controllability of implanted ion number

T. Matsukawa, T. Fukai, S. Suzuki, K. Hara, M. Koh, I. Ohdomari

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 609 KB

english, 1997

122

Damage and contamination free fabrication of thin Si wires with highly controlled feature size

Takahiro Shinada, Hiroaki Kimura, Yoshinori Kumura, Iwao Ohdomari

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 452 KB

english, 1997

123

InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved GaAs substrates

Eun Kyu Kim, Min-Suk Lee, Seong-Il Kim, Young Ju Park, Suk-Ki Min, Jeong Yong Lee

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 424 KB

english, 1997

124

Effect of mis-orientation of mesa-stripes on the growth of InGaAs quantum wires by selective molecular beam epitaxy

Michio Kihara, Hajime Fujikura, Hideki Hasegawa

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 425 KB

english, 1997

125

Analysis of indium surface segregation in molecular beam epitaxy of InGaAs/GaAs quantum wells

Koichi Yamaguchi, Tetsuya Okada, Fumito Hiwatashi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 401 KB

english, 1997

126

Compositional abruptness of wet-oxidized AlAs/GaAs interface

T. Takamori, K. Takemasa, T. Kamijoh

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 450 KB

english, 1997

127

Excitation power dependent photoluminescence characterization of insulator-semiconductor interfaces on near surface quantum structures passivated by silicon interface control layer technology

Hideki Hasegawa, Satoshi Kodama, Kengo Ikeya, Hajime Fujikura

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 356 KB

english, 1997

128

Superconductor-semiconductor junctions with InAs/Al(Ga)Sb quantum wells

T. Maemoto, H. Dobashi, H. Yamamoto, S. Sasa, M. Inoue

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 448 KB

english, 1997

129

Heterointerface control of ZnSe based II–VI laser diodes

S. Itoh, S. Tomiya, R. Imoto, A. Ishibashi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 535 KB

english, 1997

130

Bistability of electroluminescence in InAlAs/InP type II MQW diodes

Yukihide Hakone, Yuichi Kawamura, Kiyotsune Yoshimatsu, Hidetoshi Iwamura, Taichiro Ito, Naohisa Inoue

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 312 KB

english, 1997

131

Analysis of GaAs/SiN interface states and hot carrier annealing effects in GaAs MESFET

Hajime Sasaki, Kazuo Hayashi, Takashi Fujioka, Kiyoshi Mizuguchi, Tomoyuki Osaki, Kazunori Sugahara, Ryosuke Konishi, Hirofumi Kasada, Koshi Ando

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 468 KB

english, 1997

132

Anomalous downward band bending induced by selenium passivation of MBE-grown InAs(001) surfaces

Yoshio Watanabe, Fumihiko Maeda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 334 KB

english, 1997

133

A molecular beam study of the adsorption of tertiarybutylarsine (TBAs) on As-rich GaAs (001) surfaces

Jie Cui, Masashi Ozeki, Masafumi Ohashi

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 597 KB

english, 1997

134

Kinetic studies on thermal decomposition of MOVPE sources using fourier transform infrared spectroscopy

M. Sugiyama, K. Kusunoki, Y. Shimogaki, S. Sudo, Y. Nakano, H. Nagamoto, K. Sugawara, K. Tada, H. Komiyama

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 571 KB

english, 1997

135

Observations of GaAs/CaF2 heterointerface formation by electron beam surface modification and its effects

Koji Kawasaki, Kazuo Tsutsui

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 456 KB

english, 1997

136

Precise etch stop for emitter etching of self-aligned heterojunction bipolar transistors

S.W. Pang, S. Thomas III, H.H. Chen

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 625 KB

english, 1997

137

Initial domain structure of GaAs thin films grown on Si(001) substrates

Tomoaki Kawamura, Hisataka Takenaka, Takayoshi Hayashi, Masami Tachikawa, Hidefumi Mori

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 465 KB

english, 1997

138

Characterization of AlGaAs/GaAs vertical-cavity surface-emitting laser diode grown on Si substrate by MOCVD

Takashi Egawa, Yoshihiko Murata, Takashi Jimbo, Masayoshi Umeno

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 430 KB

english, 1997

139

Characterization of InP δ-doped with Er by FFT photoreflectance

Jiti Nukeaw, Naoteru Matsubara, Yasufumi Fujiwara, Yoshikazu Takeda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 433 KB

english, 1997

140

Atom configuration study of δ-doped Er in InP by fluorescence EXAFS

H. Ofuchi, J. Tsuchiya, N. Matsubara, M. Tabuchi, Y. Fujiwara, Y. Takeda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 323 KB

english, 1997

141

Occupation site and distribution of δ-doped Er in InP measured by X-ray CTR scattering

K. Fujita, J. Tsuchiya, S. Ichiki, H. Hamamatsu, N. Matsumoto, M. Tabuchi, Y. Fujiwara, Y. Takeda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 399 KB

english, 1997

142

Effects of strain on crystallization of amorphous silicon characterized by laser Raman spectroscopy

Yasuo Kimura, Takashi Katoda

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 311 KB

english, 1997

143

Photoemission study of 6H-SiC(0001)Si face

T. Jikimoto, T. Tsukamoto, A. Kinoshita, Y. Satoh, M. Hirai, M. Kusaka, M. Iwami, T. Nakata

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 367 KB

english, 1997

144

GaAs side-by-side direct wafer bonding and formation of lateral pn junction

T. Takamori, H. Wada, T. Kamijoh

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 900 KB

english, 1997

145

Wafer direct bonding of compound semiconductors and silicon at room temperature by the surface activated bonding method

Taek Ryong Chung, Liu Yang, Naoe Hosoda, Hidegi Takagi, Tadatomo Suga

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 419 KB

english, 1997

146

Formation of directly bonded Si/Si interfaces in ultra-high vacuum

Karin Ljungberg, François Grey, Stefan Bengtsson

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 547 KB

english, 1997

147

Author index

Journal:

Applied Surface Science

Year:

1997

File:

PDF, 884 KB

1997

148

Subject index

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 2.18 MB

english, 1997

149

Influence of Ag adsorbate on the structure

J. Yuhara, D. Ishikawa, K. Morita

Journal:

Applied Surface Science

Year:

1997

Language:

english

File:

PDF, 391 KB

english, 1997